1N5819/92 [VISHAY]

Rectifier Diode, Schottky, 1 Element, 1A, 40V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN;
1N5819/92
型号: 1N5819/92
厂家: VISHAY    VISHAY
描述:

Rectifier Diode, Schottky, 1 Element, 1A, 40V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN

文件: 总5页 (文件大小:389K)
中文:  中文翻译
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1N5817 thru 1N5819  
Vishay General Semiconductor  
Schottky Barrier Rectifiers  
FEATURES  
• Guardring for overvoltage protection  
• Very small conduction losses  
• Extremely fast switching  
• Low forward voltage drop  
• High frequency operation  
• Solder dip 260 °C, 40 s  
DO-204AL (DO-41)  
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
TYPICAL APPLICATIONS  
For use in low voltage high frequency inverters,  
freewheeling, dc-to-dc converters, and polarity  
protection applications.  
PRIMARY CHARACTERISTICS  
IF(AV)  
1.0 A  
VRRM  
IFSM  
20 V, 30 V, 40 V  
25 A  
MECHANICAL DATA  
Case: DO-204AL (DO-41)  
VF  
0.45 V, 0.55 V, 0.60 V  
125 °C  
Epoxy meets UL 94V-0 flammability rating  
TJ max.  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD22-B102  
E3 suffix for consumer grade, meets JESD 201 class  
1A whisker test  
Polarity: Color band denotes the cathode end  
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)  
A
PARAMETER  
SYMBOL  
VRRM  
VRMS  
1N5817  
20  
1N5818  
30  
1N5819  
40  
UNIT  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
V
V
V
V
14  
21  
28  
Maximum DC blocking voltage  
Maximum non-repetitive peak reverse voltage  
VDC  
20  
30  
40  
VRSM  
24  
36  
48  
Maximum average forward rectified current  
0.375" (9.5 mm) lead length at TL = 90 °C  
IF(AV)  
1.0  
25  
A
A
Peak forward surge current, 8.3 ms single half sine-wave  
superimposed on rated load  
IFSM  
Voltage rate of change (rated VR)  
Storage temperature range  
dV/dt  
10 000  
V/µs  
°C  
TJ, TSTG  
- 65 to + 125  
Document Number: 88525  
Revision: 20-Aug-07  
For technical questions within your region, please contact one of the following:  
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com  
www.vishay.com  
43  
1N5817 thru 1N5819  
Vishay General Semiconductor  
ELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise noted)  
A
PARAMETER  
TEST CONDITIONS  
SYMBOL  
1N5817  
1N5818  
0.550  
1N5819  
0.600  
UNIT  
V
Maximum instantaneous forward voltage (1) 1.0  
Maximum instantaneous forward voltage (1) 3.1  
VF  
VF  
0.450  
0.750  
0.875  
0.900  
V
Maximum average reverse current at rated  
DC blocking voltage (1)  
TA = 25 °C  
TA = 100 °C  
1.0  
10  
IR  
mA  
pF  
Typical junction capacitance  
Note:  
(1) Pulse test: 300 µs pulse width, 1 % duty cycle  
4.0 V, 1.0 MHz  
CJ  
125  
110  
THERMAL CHARACTERISTICS (T = 25 °C unless otherwise noted)  
A
PARAMETER  
SYMBOL  
1N5817  
1N5818  
1N5819  
UNIT  
RθJA  
RθJL  
50  
15  
Typical thermal resistance (1)  
°C/W  
Note:  
(1) Thermal resistance from junction to lead vertical P.C.B. mounted, 0.375" (9.5 mm) lead length with 1.5 x 1.5" (38 x 38 mm) copper pads  
ORDERING INFORMATION (Example)  
PREFERRED P/N  
1N5819-E3/54  
1N5819-E3/73  
UNIT WEIGHT (g)  
PREFERRED PACKAGE CODE  
BASE QUANTITY  
DELIVERY MODE  
13" diameter paper tape and reel  
Ammo pack packaging  
0.332  
54  
73  
5500  
3000  
0.332  
RATINGS AND CHARACTERISTICS CURVES  
(T = 25 °C unless otherwise noted)  
A
1.0  
30  
25  
20  
15  
10  
5
0.75  
Resistive or Inductive Load  
0.375" (9.5 mm) Lead Length  
0.5  
0.25  
0
0
0
80  
100  
120  
20  
40  
60  
140  
1
10  
Number of Cycles at 60 Hz  
100  
Case Temperature (°C)  
Figure 1. Forward Current Derating Curve  
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current  
www.vishay.com  
44  
For technical questions within your region, please contact one of the following:  
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com  
Document Number: 88525  
Revision: 20-Aug-07  
1N5817 thru 1N5819  
Vishay General Semiconductor  
100  
10  
1000  
100  
10  
TJ = 25 °C  
f = 1.0 MHz  
Vsig = 50 mVp-p  
TJ = 125 °C  
Pulse Width = 300 µs  
1 % Duty Cycle  
1
T
J = 25 °C  
0.1  
1N5818 & 1N5819  
0.01  
0
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
0.1  
1
10  
100  
Instantaneous Forward Voltage (V)  
Reverse Voltage (V)  
Figure 3. Typical Instantaneous Forward Characteristics  
Figure 6. Typical Junction Capacitance  
100  
10  
100  
10  
TJ = 125 °C  
1
0.1  
TJ = 75 °C  
1
0.01  
TJ = 25 °C  
0.001  
0.1  
0
20  
40  
60  
80  
100  
100  
0.1  
1
10  
0.01  
Percent of Rated Peak Reverse Voltage (%)  
t - Pulse Duration (s)  
Figure 4. Typical Reverse Characteristics  
Figure 7. Typical Transient Thermal Impedance  
1000  
100  
10  
TJ = 25 °C  
f = 1.0 MHz  
Vsig = 50 mVp-p  
1N5817  
0.1  
1
10  
100  
Reverse Voltage (V)  
Figure 5. Typical Junction Capacitance  
Document Number: 88525  
Revision: 20-Aug-07  
For technical questions within your region, please contact one of the following:  
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com  
www.vishay.com  
45  
1N5817 thru 1N5819  
Vishay General Semiconductor  
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)  
DO-204AL (DO-41)  
1.0 (25.4)  
MIN.  
0.107 (2.7)  
0.080 (2.0)  
DIA.  
0.205 (5.2)  
0.160 (4.1)  
1.0 (25.4)  
MIN.  
0.034 (0.86)  
0.028 (0.71)  
DIA.  
www.vishay.com  
46  
For technical questions within your region, please contact one of the following:  
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com  
Document Number: 88525  
Revision: 20-Aug-07  
Legal Disclaimer Notice  
Vishay  
Disclaimer  
All product specifications and data are subject to change without notice.  
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf  
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein  
or in any other disclosure relating to any product.  
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any  
information provided herein to the maximum extent permitted by law. The product specifications do not expand or  
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed  
therein, which apply to these products.  
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this  
document or by any conduct of Vishay.  
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless  
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such  
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting  
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding  
products designed for such applications.  
Product names and markings noted herein may be trademarks of their respective owners.  
Document Number: 91000  
Revision: 18-Jul-08  
www.vishay.com  
1

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