1N6290/100-E3
更新时间:2024-11-09 02:34:35
品牌:VISHAY
描述:DIODE 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC, CASE 1.5KE, 2 PIN, Transient Suppressor
1N6290/100-E3 概述
DIODE 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC, CASE 1.5KE, 2 PIN, Transient Suppressor
1N6290/100-E3 数据手册
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PDF下载1.5KE6.8 thru 1.5KE540A, 1N6267 thru 1N6303
Vishay Semiconductors
TRANSZORB Transient Voltage Suppressors
Major Ratings and Characteristics
V(BR) Unidirectional
6.8 V to 540 V
6.8 v to 440 V
1500 W
V
(BR) Bidirectional
PPPM
PM(AV)
6.5 W
I
FSM (Unidirectional only)
Tj max.
200 A
175 °C
Case Style 1.5KE
Features
• Glass passivated chip junction
• Available in Unidrectional and Bidirectional
• 1500 W peak pulse power capability with a
10/1000 µs waveform, repetitive rate (duty cycle):
0.01 %
• Excellent clamping capability
• Very fast response time
Mechanical Data
Case: Molded plastic body over passivated junction
Epoxy meets UL-94V-0 Flammability rating
Terminals: Matte tin plated (E3 Suffix) leads, solder-
able per J-STD-002B and MIL-STD-750, Method
2026
Polarity: For unidirectional types the color band
denotes cathode end, no marking on bidirectional
types
• Low incremental surge resistance
• Meets MSL level 1, per J-STD-020C
• AEC-Q101 qualified
Typical Applications
Use in sensitive electronics protection against voltage
Devices for bidirection Applications
transients induced by inductive load switching and For bidirectional types, use C or CA suffix for types
lighting on ICs, MOSFET, signal lines of sensor units (e.g. 1.5KE440CA).
for consumer, computer, industrial, automotive, and
Telecommunication
Electrical characteristics apply in both directions.
Maximum Ratings
(TA = 25 °C unless otherwise noted)
Parameter
Symbol
PPPM
Limit
1500
Unit
W
Peak pulse power dissipation with a 10/1000 µs waveform(1) (Fig. 1)
Peak pulse current with a 10/1000 µs waveform(1)
Steady state power dissipation lead lengths 0.375“ (9.5 mm)(2)
TL = 75 °C
IPPM
See Next Table
6.5
A
PM(AV)
W
,
Peak forward surge current 8.3 ms single half sine-wave unidirectional
only(3)
IFSM
200
A
Maximum instantaneous forward voltage at 100 A for unidirectional only(4)
Operating junction and storage temperature range
VF
3.5/5.0
V
TJ, TSTG
- 55 to + 175
°C
Notes:
(1) Non-repetitive current pulse, per Fig. 3 and derated above TA = 25 °C per Fig. 2
(2) Mounted on copper pad area of 1.6 x 1.6" (40 x 40 mm) per Fig. 5
(3) Measured on 8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum
(4) VF = 3.5 V for 1.5KE220(A) & below; VF = 5.0 V for 1.5KE250(A) & above
Document Number 88301
03-Mar-05
www.vishay.com
1
1.5KE6.8 thru 1.5KE540A, 1N6267 thru 1N6303
Vishay Semiconductors
Electrical Characteristics
(TA = 25 °C unless otherwise noted).
Maximum
Reverse
Voltage Leakageat
Maximum
Peak
Pulse
Current
IPPM(2) (A)
Maximum
Clamping
Voltage at
IPPM
Maximum
Temp
Coefficient
of V(BR)
JEDEC
Type
Number
General
Semiconductor
Part
Breakdown Voltage
Test
Current
IT
Stand-off
(1)
V(BR) at IT
VWM
VWM
ID(4) (µA)
(V)
Number
(mA)
(V)
VC (V)
(% / °C)
Min
6.12
6.45
6.75
7.13
7.38
7.79
8.19
8.65
9.00
9.50
9.90
10.5
10.8
11.4
11.7
12.4
13.5
14.3
14.4
15.2
16.2
17.1
18.0
19.0
19.8
20.9
21.6
22.8
24.3
25.7
27.0
28.5
29.7
31.4
32.4
34.2
35.1
37.1
38.7
40.9
42.3
44.7
45.9
48.5
50.4
53.2
55.8
58.9
61.2
64.6
67.5
71.3
Max
7.48
7.14
8.25
7.88
9.02
8.61
10.0
9.55
11.0
10.5
12.1
11.6
13.2
12.6
14.3
13.7
16.5
15.8
17.6
16.8
19.8
18.9
22.0
21.0
24.2
23.1
26.4
25.2
29.7
28.4
33.0
31.5
36.3
34.7
39.6
37.8
42.9
41.0
47.3
45.2
51.7
49.4
56.1
53.6
61.8
58.8
68.2
65.1
74.8
71.4
82.5
78.8
1N6267
+1.5KE6.8
+1.5KE6.8A
+1.5KE7.5
+1.5KE7.5A
+1.5KE8.2
+1.5KE8.2A
+1.5KE9.1
+1.5KE9.1A
+1.5KE10
+1.5KE10A
+1.5KE11
+1.5KE11A
+1.5KE12
+1.5KE12A
+1.5KE13
+1.5KE13A
+1.5KE15
+1.5KE15A
+1.5KE16
+1.5KE16A
+1.5KE18
+1.5KE18A
+1.5KE20
+1.5KE20A
+1.5KE22
+1.5KE22A
+1.5KE24
+1.5KE24A
+1.5KE27
+1.5KE27A
+1.5KE30
+1.5KE30A
+1.5KE33
+1.5KE33A
+1.5KE36
+1.5KE36A
+1.5KE39
+1.5KE39A
+1.5KE43
+1.5KE43A
+1.5KE47
+1.5KE47A
+1.5KE51
+1.5KE51A
+1.5KE56
+1.5KE56A
+1.5KE62
+1.5KE62A
+1.5KE68
+1.5KE68A
+1.5KE75
+1.5KE75A
10
10
10
10
10
5.50
5.80
6.05
6.40
6.63
7.02
7.37
7.78
8.10
8.55
8.92
9.40
9.72
10.2
10.5
11.1
12.1
12.8
12.9
13.6
14.5
15.3
16.2
17.1
17.8
18.8
19.4
20.5
21.8
23.1
24.3
25.6
26.8
28.2
29.1
30.8
31.6
33.3
34.8
36.8
38.1
40.2
41.3
43.6
45.4
47.8
50.2
53.0
55.1
58.1
60.7
64.1
1000
1000
500
500
200
200
50
50
10
10
139
143
128
133
120
124
109
112
100
10.8
10.5
11.7
11.3
12.5
12.1
13.8
13.4
15.0
14.5
16.2
15.6
17.3
16.7
19.0
18.2
22.0
21.2
23.5
22.5
26.5
25.2
29.1
27.7
31.9
30.6
34.7
33.2
39.1
37.5
43.5
41.4
47.7
45.7
52.0
49.9
56.4
53.9
61.9
59.3
67.8
64.8
73.5
70.1
80.5
77.0
89.0
85.0
98.0
92.0
109
0.057
0.057
0.061
0.061
0.065
0.065
0.068
0.068
0.073
0.073
0.075
0.075
0.076
0.078
0.081
0.081
0.084
0.084
0.086
0.086
0.088
0.089
0.090
0.090
0.092
0.092
0.094
0.094
0.096
0.096
0.097
0.097
0.098
0.098
0.099
0.099
0.100
0.100
0.101
0.101
0.101
0.101
0.102
0.102
0.103
0.103
0.104
0.104
0.104
0.104
0.105
0.105
1N6267A
1N6268
1N6268A
1N6269
1N6269A
1N6270
1N6270A
1N6271
1N6271A
1N6272
1N6272A
1N6273
1N6273A
1N6274
1N6274A
1N6275
1N6275A
1N6276
1N6276A
1N6277
1N6277A
1N6278
1N6278A
1N6279
1N6279A
1N6280
1N6280A
1N6281
1N6281A
1N6282
1N6282A
1N6283
1N6283A
1N6284
1N6284A
1N6285
1N6285A
1N6286
1N6286A
1N6287
1N6287A
1N6288
1N6288A
1N6289
1N6289A
1N6290
1N6290A
1N6291
1N6291A
1N6292
1N6292A
10
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
103
5.0
5.0
5.0
5.0
5.0
5.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
92.6
96.2
86.7
89.8
78.9
82.4
68.2
70.8
63.8
66.7
56.6
59.5
51.5
54.2
47.0
49.0
43.2
45.2
38.4
40.0
34.5
36.2
31.4
32.8
28.8
30.1
26.6
27.8
24.2
25.3
22.1
23.1
20.4
21.4
18.6
19.5
16.9
17.6
15.3
16.3
13.9
14.6
104
www.vishay.com
2
Document Number 88301
03-Mar-05
1.5KE6.8 thru 1.5KE540A, 1N6267 thru 1N6303
Vishay Semiconductors
Maximum
Reverse
Voltage Leakageat
Maximum
Peak
Pulse
Current
IPPM(2) (A)
Maximum
Clamping
Voltage at
IPPM
Maximum
Temp
Coefficient
of V(BR)
JEDEC
Type
Number
General
Semiconductor
Part
Breakdown Voltage
Test
Current
IT
Stand-off
(1)
V(BR) at IT
VWM
VWM
ID(4) (µA)
(V)
Number
(mA)
(V)
VC (V)
(% / °C)
Min
73.8
77.9
81.9
86.5
90.0
95.0
99.0
105
108
114
117
124
136
143
144
152
153
162
162
171
180
190
198
209
225
237
270
285
315
333
360
380
396
418
432
456
459
485
486
513
Max
90.2
86.1
100.0
95.5
110
105
121
116
132
126
143
137
165
158
176
168
187
179
198
189
220
210
242
231
275
263
330
315
385
368
440
420
484
462
528
504
561
535
594
567
1N6293
+1.5KE82
+1.5KE82A
+1.5KE91
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
66.4
70.1
73.7
77.8
81.0
85.5
89.2
94.0
97.2
102
105
111
121
128
130
136
138
145
146
154
162
171
175
185
202
214
243
256
284
300
324
342
356
376
389
408
413
434
437
459
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
12.7
13.3
11.5
12.0
10.4
10.9
9.5
9.9
8.7
9.1
8.0
8.4
7.0
7.2
6.5
6.8
6.1
6.4
5.8
6.1
5.2
5.5
4.4
4.6
4.2
4.4
3.5
3.6
3.0
3.1
2.6
2.7
2.4
2.5
118
113
131
125
144
137
158
152
173
165
187
179
215
207
230
219
244
234
258
246
287
274
344
328
360
344
430
414
504
482
574
548
631
602
686
658
729
698
772
740
0.105
0.105
0.106
0.106
0.106
0.106
0.107
0.107
0.107
0.107
0.107
0.107
0.108
0.106
0.106
0.108
0.108
0.108
0.108
0.108
0.108
0.108
0.108
0.108
0.110
0.110
0.110
0.110
0.110
0.110
0.110
0.110
0.110
0.110
0.110
0.110
0.110
0.110
0.110
0.110
1N6293A
1N6294
1N6294A
1N6295
1N6295A
1N6296
1N6296A
1N6297
1N6297A
1N6298
1N6298A
1N6299
1N6299A
1N6300
1N6300A
1N6301
1N6301A
1N6302
1N6302A
1N6303
1N6303A
+1.5KE91A
+1.5KE100
+1.5KE100A
+1.5KE110
+1.5KE 110A
+1.5KE120
+1.5KE120A
+1.5KE130
+1.5KE130A
+1.5KE150
+1.5KE150A
+1.5KE160
+1.5KE160A
+1.5KE170
+1.5KE170A
1.5KE180
1.5KE180A
1.5KE200
1.5KE200A*
1.5KE220
1.5KE220A*
1.5KE250
1.5KE250A
1.5KE300
1.5KE300A
1.5KE350
1.5KE350A
1.5KE400
1.5KE400A
1.5KE440
1.5KE440A
1.5KE480
1.5KE480A
1.5KE510
1.5KE510A
1.5KE540
2.19
2.28
2.06
2.15
1.94
2.03
1.5KE540A
Notes:
(1) Pulse test: tp ≤ 50 ms
(2) Surge current waveform per Fig. 3 and derate per Fig. 2
(3) All terms and symbols are consistent with ANSI/IEEE CA62.35
(4) For bidirectional types with VR 10 volts and less the ID limit is doubled
* Bidirectional versions are UL approved under component across the line protection, ULV1414 file number E108274 (1.5KE200CA,
1.5KE220CA)
+ Underwriters Laboratory Recognition for the classification of protectors (QVGQ2) under the UL standard for safety 497B and file number
E136766 for both uni-directional and bi-directional devices
Document Number 88301
03-Mar-05
www.vishay.com
3
1.5KE6.8 thru 1.5KE540A, 1N6267 thru 1N6303
Vishay Semiconductors
Thermal Characteristics
(TA = 25 °C unless otherwise noted)
Parameter
Symbol
RθJL
Limit
20
Unit
Typical thermal resistance junction-to-lead
°C/W
Typical thermal resistance junction-to-ambient
RθJA
75
°C/W
Application
• This series of Silicon Transient Suppressors is
used in applications where large voltage tran-
sients can permanently damage voltage-sensitive
components.
• This Transient Voltage Suppressor diode has a
pulse power rating of 1500 watts for one millisec-
ond. The response time of TVS diode clamping
-9
action is effectively instantaneous (1 x 10 sec-
onds bidirectional); therefore, they can protect
integrated circuits, MOS devices, hybrids, and
other voltage sensitive semiconductors and com-
ponents. TVS diodes can also be used in series or
parallel to increase the peak power ratings.
• The TVS diode can be used in applications where
induced lightning on rural or remote transmission
lines presents a hazard to electronic circuitry (ref:
R.E.A. specification P.E. 60).
Ratings and Characteristics Curves
(TA = 25 °C unless otherwise specified)
100
10
1
150
TJ = 25 °C
tr = 10 µsec.
Pulse Width (td)
is defined as the point
where the peak current
decays to 50 % of IPPM
Peak Value
IPPM
100
50
0
Half Value — IPP
IPPM
2
10/1000 µsec. Waveform
as defined by R.E.A.
td
0.1
0.1µs
1.0µs
10µs
100µs
1.0ms
10ms
1.0
3.0
4.0
0
2.0
t — Time (ms)
td — Pulse Width (sec.)
Figure 1. Peak Pulse Power Rating Curve
Figure 3. Pulse Waveform
10000
100
Unidirectional
Bidirectional
V
R
= 0
75
50
1000
V
= Rated
R
100
10
Stand-off Voltage
25
0
f = 1 MHz
Vsig = 50 m Vp-p
= 25°C
T
J
5
10
100
V(BR), Breakdown Voltage (V)
500
0
25
50
75
100
125
150
175 200
TA — Ambient Temperature (°C)
Figure 2. Pulse Derating Curve
Figure 4. Typical Junction Capacitance
www.vishay.com
4
Document Number 88301
03-Mar-05
1.5KE6.8 thru 1.5KE540A, 1N6267 thru 1N6303
Vishay Semiconductors
100
8.0
Waveform:
1.5KE200
1.5KE130
10/1000 µs Impulse
60 HZ
Resistive or
Inductive Load
V
= V - V
C
∆
C
(BR)
7.0
6.0
5.0
20
10
1.5KE75
1.5KE39
L = 0.375" (9.5 mm)
Lead Lengths
2.0
1.0
4.0
3.0
1.5KE33
1.5KE6.8
1.5KE9.1
2.0
1.6 x 1.6 x .040"
(40 x 40 x 1 mm)
Copper Heat Sinks
0.2
0.1
1.0
0
0.5
1
2.0
10
50
0
25
50
75
100
125
150
175
200
I
, Peak Pulse Current (A)
PP
TL — Lead Temperature (°C)
Figure 5. Steady State Power Derating Curve
Figure 8. Incremental Clamping Voltage Curve (Unidirectional)
100
Waveform:
200
10/1000 µs Impulse
8.3 ms Single Half Sine-Wave
= T max.
V
= V - V
C
∆
C
(BR)
T
J
J
1.5KE200C
1.5KE75C
20
10
100
1.5KE39C
1.5KE30C
1.5KE15C
11C
2.0
1.0
1.5KE7.5C
0.2
0.1
0.5
1
2.0
10
20
50
10
1
10
Number of Cycles at 60 HZ
100
I
, Peak Pulse Current (A)
PP
Figure 6. Maximum Non-repetitive Forward Surge Current
Uni-Directional only
Figure 9. Incremental Clamping Voltage Curve (Bidirectional)
100
100
Waveform:
Waveform:
10/1000 µs Impulse
1.5KE200
8/20µs Impulse
V
= V - V
C
∆
C
(BR)
1.5KE200C
V
∆
= V - V
C
(BR)
C
1.5KE130
1.5KE100
1.5KE75
20
10
20
10
1.5KE75C
1.5KE39C
1.5KE30C
1.5KE15C
2.0
1.0
1.5KE39
2.0
1.0
1.5KE11C
1.5KE7.5C
1.5KE33
1.5KE6.8
1.5KE9.1
1.5KE18
1.5KE12
0.2
0.1
0.2
0.1
0.5
1
2.0
10
20
50
0.5
1
2.0
10
20
50
I
, Peak Pulse Current (A)
PP
I
, Peak Pulse Current (A)
PP
Figure 7. Incremental Clamping Voltage Curve (Unidirectional)
Figure 10. Incremental Clamping Voltage Curve (Bidirectional)
Document Number 88301
03-Mar-05
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5
1.5KE6.8 thru 1.5KE540A, 1N6267 thru 1N6303
Vishay Semiconductors
100
1000
100
10
10
1.0
1
0.1
Pulse width = 300
1% Duty Cycle
s
T
= 25 C
J
0.01
0.1
0
100
200
300
400
500
600
0
0.4
0.8
1.2
1.6
2.0
Instantaneous Forward Voltage (V)
Breakdown Voltage (V)
Figure 13. Typical Reverse Leakage Characteristics
Figure 11. Instantaneous Forward Voltage Characteristics Curve
100
10
1
0.1
0.001
0.01
0.1
1
10
100
1000
tp – Pulse Duration (sec)
Figure 12. Typical Transient Thermal Impedance
Package outline dimensions in inches (millimeters)
Case Style 1.5KE
1.0 (25.4)
MIN.
0.210 (5.3)
0.190 (4.8)
DIA.
0.375 (9.5)
0.285 (7.2)
1.0 (25.4)
MIN.
0.042 (1.07)
0.038 (0.96)
DIA.
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6
Document Number 88301
03-Mar-05
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
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1
1N6290/100-E3 相关器件
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