1N6384-E3/54 [VISHAY]

DIODE 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE, ROHS COMPLIANT, PLASTIC, CASE 1.5KE, 2 PIN, Transient Suppressor;
相关元器件产品Datasheet PDF文档

1N6384-E3/56

DIODE 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC, CASE 1.5KE, 2 PIN, Transient Suppressor
0 VISHAY

1N6384-E373

TRANSZORB® Transient Voltage Suppressors
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17 VISHAY

1N6385

TRANSZORB® Transient Voltage Suppressors
16 VISHAY

1N6385

GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR
9 MDE

1N6385

GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR STANDOFF VOLTAGE- 5.0 to 45.0V 1500 Watt Peak Power
20 icpdf_datashe

1N6385

Zener Transient Voltage Suppressors Unidirectional and Bidirectional
23 FREESCALE
MAX34334CSE前5页PDF页面详情预览
ICTE5 thru ICTE18C, 1N6373 thru 1N6386
www.vishay.com
Vishay General Semiconductor
T
RANS
Z
ORB®
Transient Voltage Suppressors
FEATURES
• Glass passivated chip junction
• Available in uni-directional and bi-directional
• 1500 W peak pulse power capability with a
10/1000 μs waveform, repetitive rate (duty
cycle): 0.01 %
• Excellent clamping capability
• Very fast response time
• Low incremental surge resistance
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
Case Style 1.5KE
PRIMARY CHARACTERISTICS
V
WM
V
BR
(uni-directional)
V
BR
(bi-directional)
P
PPM
P
D
I
FSM
T
J
max.
Polarity
Package
5.0 V to 18 V
6.0 V to 21.2 V
9.2 V to 21.2 V
1500 W
6.5 W
200 A
175 °C
Uni-directional, bi-directional
1.5KE
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting
on ICs, MOSFET, signal lines of sensor units for consumer,
computer, industrial, and telecommunication.
MECHANICAL DATA
Case:
Molded epoxy body over passivated junction
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant and commercial grade
Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified
(“X” denotes revision code e.g. A, B, ...)
Terminals:
Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity:
For uni-directional types the color band denotes
cathode end, no marking on bi-directional types
DEVICES FOR BI-DIRECTION APPLICATIONS
For bi-directional types, use C suffix (e.g. ICTE18C).
Electrical characteristics apply in both directions.
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Peak pulse power dissipation with a 10/1000 μs waveform
(1)
(fig. 1)
Peak pulse current with a 10/1000 μs waveform
(1)
(fig. 3)
Power dissipation on infinite heatsink at T
L
= 75 °C (fig. 8)
Peak forward surge current 8.3 ms single half sine-wave uni-directional only
(2)
Maximum instantaneous forward voltage at 100 A for uni-directional only
Operating junction and storage temperature range
Notes
(1)
Non-repetitive current pulse, per fig. 3 and derated above T = 25 °C per fig. 2
A
(2)
8.3 ms single half sine-wave, duty cycle = 4 pulses per minute maximum
SYMBOL
P
PPM
I
PPM
P
D
I
FSM
V
F
T
J
, T
STG
LIMIT
1500
See next table
6.5
200
3.5
-55 to +175
UNIT
W
A
W
A
V
°C
Revision: 16-Jan-18
Document Number: 88356
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
ICTE5 thru ICTE18C, 1N6373 thru 1N6386
www.vishay.com
Vishay General Semiconductor
BREAKDOWN
VOLTAGE
V
BR
AT 1.0 mA
(V)
MIN.
ELECTRICAL CHARACTERISTICS (JEDEC
®
REGISTERED DATA)
(T
A
= 25 °C unless otherwise noted)
JEDEC
®
TYPE
NUMBER
GENERAL
SEMICONDUCTOR
PART NUMBER
STAND-OFF
VOLTAGE
V
WM
(V)
MAXIMUM
REVERSE
LEAKAGE
AT V
WM
I
D
(μA)
300
25.0
2.0
2.0
2.0
2.0
50
2.0
2.0
2.0
2.0
MAXIMUM
CLAMPING
VOLTAGE
AT I
PP
= 1.0 A
V
C
(V)
7.1
11.3
13.7
16.1
20.1
24.2
11.4
14.1
16.7
20.8
24.8
MAXIMUM
CLAMPING
VOLTAGE AT
I
PP
= 10 A
V
C
(V)
7.5
11.5
14.1
16.5
20.6
25.2
11.6
14.5
17.1
21.4
25.5
MAXIMUM
PEAK
PULSE
CURRENT
I
PP
(A)
160
100
90
70
60
50
100
90
70
60
50
UNI-DIRECTIONAL TYPES
1N6373
(2)
1N6374
1N6375
1N6376
1N6377
1N6378
1N6382
1N6383
1N6384
1N6385
1N6386
ICTE5
(2)
ICTE8
ICTE10
ICTE12
ICTE15
ICTE18
ICTE8C
ICTE10C
ICTE12C
ICTE15C
ICTE18C
5.0
8.0
10.0
12.0
15.0
18.0
8.0
10.0
12.0
15.0
18.0
6.0
9.4
11.7
14.1
17.6
21.2
9.4
11.7
14.1
17.6
21.2
BI-DIRECTIONAL TYPES
Notes
(1)
“C” suffix indicates bi-directional
(2)
ICTE5 and 1N6373 are not available as bi-directional
(3)
Clamping factor: 1.33 at full rated power; 1.20 at 50 % rated power; clamping factor: the ratio of the actual V (clamping voltage) to the V
C
BR
(breakdown voltage) as measured on a specific device
ORDERING INFORMATION
(Example)
PREFERRED P/N
ICTE5-E3/54
ICTE5HE3_A/C
(1)
Note
(1)
AEC-Q101 qualified
UNIT WEIGHT (g)
0.968
0.968
PREFERRED PACKAGE CODE
54
C
BASE QUANTITY
1400
1400
DELIVERY MODE
13" diameter paper tape and reel
13" diameter paper tape and reel
Revision: 16-Jan-18
Document Number: 88356
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
ICTE5 thru ICTE18C, 1N6373 thru 1N6386
www.vishay.com
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25 °C unless otherwise noted)
100 000
100
P
PPM
- Peak Pulse Power (kW)
C
J
- Junction Capacitance (pF)
Non-Repetitive
Pulse
Waveform
shown in Fig. 3
T
A
= 25 °C
10
Measured at
Zero Bias
10 000
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mV
p-p
1
1000
Measured at Stand-Off
Voltage V
WM
0.1
0.1 µs
1.0 µs
10 µs
100 µs
1.0 ms
10 ms
100
1.0
10
100
200
t
d
- Pulse
Width
(s)
V
BR
- Breakdown
Voltage
(V)
Fig. 1 - Peak Pulse Power Rating Curve
Fig. 4 -
Typical Junction Capacitance Uni-Directional
Peak Pulse Power (P
PP
) or Current (I
PP
)
Derating in Percentage,
%
100
100 000
75
C
J
- Junction Capacitance (pF)
Measured at
Zero Bias
Bi-Directional Type
10 000
Non-Repetitive
Pulse
Waveform
shown in Fig. 3
T
A
= 25 °C
50
1000
25
Measured at Stand-Off
Voltage V
WM
100
1.0
10
100
200
0
0
25
50
75
100
125
150
175
200
T
J
- Initial Temperature (°C)
V
BR
- Breakdown
Voltage
(V)
Fig. 2 -
Pulse Power or Current vs. Initial Junction Temperature
Fig. 5 -
Typical Junction Capacitance
I
FSM
- Peak Forward Surge Current (A)
150
I
PPM
- Peak Pulse Current,
%
I
RSM
t
r
= 10 µs
Peak
Value
I
PPM
T
J
= 25 °C
Pulse
Width
(t
d
)
is defined as the Point
where
the Peak Current
decays to 50
%
of I
PPM
200
T
J
= T
J
max.
8.3 ms Single Half Sine-Wave
100
100
Half
Value
- I
PP
I
PPM
2
50
10/1000 µs
Waveform
as defined
by
R.E.A.
t
d
0
0
1.0
2.0
3.0
4.0
50
10
1
5
10
50
100
t - Time (ms)
Number
of Cycles at 60 Hz
Fig. 3 -
Pulse Waveform
Fig. 6 -
Maximum Non-Repetitive Forward Surge Current
Uni-Directional Only
Revision: 16-Jan-18
Document Number: 88356
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
ICTE5 thru ICTE18C, 1N6373 thru 1N6386
www.vishay.com
Vishay General Semiconductor
8.0
50
Uni-Directional Only
T
A
= 25 °C
7.0
I
PP
- Peak Pulse Current (A)
P
D
- Power Dissipation (W)
6.0
5.0
4.0
3.0
2.0
1.0
L = 0.375" (9.5 mm)
Lead Lengths
10
ICTE10
ICTE12
ICTE15
ICTE18
ICTE5
ICTE8
1
6
8
10
12
14
16
18
20
22
24
26
28
0
0
25
50
75
100
125
150
175
200
V
C
- Clamping
Voltage
(V)
T
L
- Lead Temperature (°C)
Fig. 7 -
Typical Characteristics Clamping Voltage
Fig. 8 -
Power Derating Curve
PACKAGE OUTLINE DIMENSIONS
in inches (millimeters)
Case
Style
1.5KE
1.0 (25.4)
MIN.
0.210 (5.3)
0.190 (4.8)
DIA.
0.375 (9.5)
0.285 (7.2)
1.0 (25.4)
MIN.
0.042 (1.07)
0.038 (0.96)
DIA.
Revision: 16-Jan-18
Document Number: 88356
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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Revision: 08-Feb-17
1
Document Number: 91000