1N6479/25 [VISHAY]
Rectifier Diode, 1 Element, 1A, 100V V(RRM), Silicon, DO-213AB, PLASTIC PACKAGE-2;
| 型号： | 1N6479/25 |
| 厂家： | 
VISHAY |
| 描述： | Rectifier Diode, 1 Element, 1A, 100V V(RRM), Silicon, DO-213AB, PLASTIC PACKAGE-2 |
| 文件： | 总4页 (文件大小：321K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
1N6478 thru 1N6484
Vishay General Semiconductor
Surface Mount Glass Passivated Junction Rectifier
®
Major Ratings and Characteristics
IF(AV)
VRRM
IFSM
IR
1.0 A
50 V to 1000 V
30 A
10 µA
*
VF
1.1 V
d
e
t
n
Tj max.
175 °C
e
t
a
P
*Glass-plastic encapsulation
is covered by
DO-213AB
Patent No. 3,996,602,
brazed-lead assembly to
Patent No. 3,930,306
Features
Mechanical Data
• Superectifier structure for high reliability
condition
Case: DO-213AB, molded epoxy over glass body
Epoxy meets UL-94V-0 Flammability rating
• Patented glass-plastic encapsulation technique
• Ideal for automated placement
• Low forward voltage drop
Terminals: Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade, HE3 suffix for high
reliability grade (AEC Q101 qualified)
• Low leakage current
Polarity: Two bands indicate cathode end - 1st band
denotes device type and 2nd band denotes repetitive
peak reverse voltage rating
• High forward surge capability
• Meets environmental standard MIL-S-19500
• Meets MSL level 1, per J-STD-020C
• Solder Dip 260 °C, 40 seconds
Typical Applications
For use in general purpose rectification of power sup-
plies, inverters, converters and freewheeling diodes
for consumer, automotive and Telecommunication
Maximum Ratings
(TA = 25 °C unless otherwise noted)
Standard recovery time device: 1st band is White Symbol 1N6478 1N6479 1N6480 1N6481 1N6482 1N6483 1N6484 Unit
Polarity color bands (2nd Band)
Gray
50
Red
100
Orange Yellow
Green
600
Blue
800
Violet
1000
Maximum repetitive peak reverse voltage
VRRM
VRMS
VDC
200
140
200
400
280
400
1.0
30
V
V
V
A
A
Maximum RMS voltage
35
50
70
420
600
560
800
700
Maximum DC blocking voltage
Maximum average forward rectified current
100
1000
IF(AV)
IFSM
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load
Maximum full load reverse current, full cycle
average at TA = 75 °C
IR(AV)
100
µA
°C
Operating junction and storage temperature range TJ, TSTG
- 65 to + 175
Document Number 88527
06-Sep-05
www.vishay.com
1
1N6478 thru 1N6484
Vishay General Semiconductor
Electrical Characteristics
(TA = 25 °C unless otherwise noted)
Parameter
Maximum
instantaneous forward
voltage
Test condition
Symbol 1N6478 1N6479 1N6480 1N6481 1N6482 1N6483 1N6484 Unit
at 1.0 A
TA = 25 °C
VF
1.1
1.0
V
TA = 75 °C
Maximum DC reverse
current at rated DC
blocking voltage
T
A = 25 °C
IR
10
200
µA
pF
TA = 125 °C
Typical junction
capacitance
at 4.0 V, 1MHz
CJ
8.0
Thermal Characteristics
(TA = 25 °C unless otherwise noted)
Parameter
Symbol 1N6478 1N6479 1N6480 1N6481 1N6482 1N6483 1N6484 Unit
Maximum thermal resistance (1) (2)
RθJA
RθJT
50
20
°C/W
Notes:
(1) Thermal resistance from junction to ambient, 0.24 x 0.24" (6.0 x 6.0 mm) copper pads to each terminal
(2) Thermal resistance from junction to terminal, 0.24 x 0.24" (6.0 x 6.0 mm) copper pads to each terminal
Ratings and Characteristics Curves
(TA = 25 °C unless otherwise noted)
30
25
20
15
10
5.0
0
1.0
60 Hz
Resistive or
Inductive Load
TA = 75 °C
8.3 ms Single Half Sine-Wave
0.8
0.6
0.4
0.2
0
25
50
75
175
0
100
125
150
1
10
100
Number of Cycles at 60 Hz
Terminal Temperature (°C)
Figure 1. Forward Current Derating Curve
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
www.vishay.com
Document Number 88527
06-Sep-05
2
1N6478 thru 1N6484
Vishay General Semiconductor
30
10
1.0
TJ = 25 °C
f = 1.0 MHz
Vsig = 50mVp-p
Pulse Width = 300 µs
1% Duty Cycle
10
TJ = 25 °C
0.1
1
0.01
0.4
0.6
0.8
1.0
1.2
1.4
1.6
10
1
100
Instantaneous Forward Voltage (V)
Reverse Voltage (V)
Figure 3. Typical Instantaneous Forward Characteristics
Figure 5. Typical Junction Capacitance
10
100
10
1
Mounted on 0.20 x 0.27" (5 x 7mm)
Copper Pad Areas
TJ = 100 °C
1.0
0.1
TJ = 25 °C
0.01
0.1
0.01
0
20
40
60
80
100
0.1
1
10
100
Percent of Rated Peak Reverse Voltage (%)
t -- Pulse Duration (sec.)
Figure 4. Typical Reverse Characteristics
Figure 6. Typical Transient Thermal Impedance
Package outline dimensions in inches (millimeters)
DO-213AB
SOLDERABLE ENDS
+ 0
D2 = D1
- 0.008 (0.20)
1st BAND
D1=
0.105
D2
0.095
(2.67)
(2.41)
0.022 (0.56)
0.018 (0.46)
0.022 (0.56)
0.018 (0.46)
0.205 (5.2)
0.185(4.7)
1st band denotes type and positive end (cathode)
Document Number 88527
06-Sep-05
www.vishay.com
3
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
www.vishay.com
1
相关型号：
1N647UR-1E3
Rectifier Diode, 1 Element, 0.4A, Silicon, DO-213AA, HERMETIC SEALED, GLASS PACKAGE-2
MICROSEMI
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