概述
规格参数
数据手册22RIA40MS90 概述
Medium Power Thyristors (Stud Version), 22 A 中功率晶闸管（梭哈版） ，22是 可控硅整流器
22RIA40MS90 规格参数
| 是否无铅： | 不含铅 | 是否Rohs认证： | 符合 |
| 生命周期： | Active | 零件包装代码： | TO-48 |
| 包装说明： | POST/STUD MOUNT, O-MUPM-D2 | 针数： | 2 |
| Reach Compliance Code： | compliant | HTS代码： | 8541.30.00.80 |
| 风险等级： | 5.11 | Is Samacsys： | N |
| 其他特性： | HIGH RELIABILITY | 标称电路换相断开时间： | 110 µs |
| 配置： | SINGLE | 最大直流栅极触发电流： | 60 mA |
| 最大直流栅极触发电压： | 2 V | 最大维持电流： | 130 mA |
| JEDEC-95代码： | TO-208AA | JESD-30 代码： | O-MUPM-D2 |
| 最大漏电流： | 10 mA | 通态非重复峰值电流： | 420 A |
| 元件数量： | 1 | 端子数量： | 2 |
| 最大通态电流： | 22000 A | 最高工作温度： | 125 °C |
| 最低工作温度： | -65 °C | 封装主体材料： | METAL |
| 封装形状： | ROUND | 封装形式： | POST/STUD MOUNT |
| 峰值回流温度（摄氏度）： | NOT SPECIFIED | 认证状态： | Not Qualified |
| 最大均方根通态电流： | 35 A | 断态重复峰值电压： | 400 V |
| 重复峰值反向电压： | 400 V | 子类别： | Silicon Controlled Rectifiers |
| 表面贴装： | NO | 端子形式： | SOLDER LUG |
| 端子位置： | UPPER | 处于峰值回流温度下的最长时间： | NOT SPECIFIED |
| 触发设备类型： | SCR | Base Number Matches： | 1 |
22RIA40MS90 数据手册
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PDF下载22RIA Series
Vishay High Power Products
Medium Power Thyristors
(Stud Version), 22 A
FEATURES
• Improved glass passivation for high reliability
and exceptional stability at high temperature
• High dI/dt and dV/dt capabilities
• Standard package
RoHS
COMPLIANT
• Low thermal resistance
• Metric threads version available
• Types up to 1200 V VDRM/VRRM
• RoHS compliant
TO-208AA (TO-48)
• Designed and qualified for industrial and consumer level
TYPICAL APPLICATIONS
• Medium power switching
PRODUCT SUMMARY
IT(AV)
22 A
• Phase control applications
• Can be supplied to meet stringent military, aerospace and
other high reliability requirements
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
VALUES
UNITS
22
85
A
°C
A
IT(AV)
TC
IT(RMS)
35
50 Hz
60 Hz
50 Hz
60 Hz
400
ITSM
A
420
793
I2t
A2s
724
V
DRM/VRRM
100 to 1200
110
V
tq
Typical
µs
°C
TJ
- 65 to 125
Document Number: 93700
Revision: 19-Sep-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
1
22RIA Series
Medium Power Thyristors
(Stud Version), 22 A
Vishay High Power Products
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
V
DRM/VRRM, MAXIMUM REPETITIVE PEAK
V
RSM, MAXIMUM NON-REPETITIVE
IDRM/IRRM MAXIMUM
AT TJ = TJ MAXIMUM
mA
TYPE
NUMBER
VOLTAGE
CODE
AND OFF-STATE VOLTAGE (1)
V
PEAK VOLTAGE (2)
V
20
10
20
100
200
150
300
40
400
500
22RIA
60
600
700
10
80
800
900
100
120
1000
1200
1100
1300
Notes
(1)
Units may be broken over non-repetitively in the off-state direction without damage, if dI/dt does not exceed 20 A/µs
For voltage pulses with tp ≤ 5 ms
(2)
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
180° sinusoidal conduction
VALUES
UNITS
22
A
°C
A
Maximum average on-state current
at case temperature
IT(AV)
85
Maximum RMS on-state current
IT(RMS)
35
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
400
420
335
355
793
724
560
515
No voltage
reapplied
Maximum peak, one-cycle
non-repetitive surge current
ITSM
A
100 % VRRM
reapplied
Sinusoidal
half wave,
initial TJ =
TJ maximum
No voltage
reapplied
Maximum I2t for fusing
I2t
A2s
100 % VRRM
reapplied
t = 0.1 to 10 ms, no voltage reapplied,
TJ = TJ maximum
Maximum I2√t for fusing
I2√t
7930
A2√s
(16.7 % x π x IT(AV) < I < π x IT(AV)),
TJ = TJ maximum
Low level value of threshold voltage
High level value of threshold voltage
VT(TO)1
VT(TO)2
rt1
0.83
0.95
14.9
V
(I > π x IT(AV)), TJ = TJ maximum
Low level value of
on-state slope resistance
(16.7 % x π x IT(AV) < I < π x IT(AV)),
TJ = TJ maximum
mΩ
High level value of
on-state slope resistance
rt2
(I > π x IT(AV)), TJ = TJ maximum
13.4
Maximum on-state voltage
Maximum holding current
Latching current
VTM
IH
Ipk = 70 A, TJ = 25 °C
1.70
130
200
V
TJ = 25 °C, anode supply 6 V, resistive load
mA
IL
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For technical questions, contact: ind-modules@vishay.com
Document Number: 93700
Revision: 19-Sep-08
22RIA Series
Medium Power Thyristors
(Stud Version), 22 A
Vishay High Power Products
SWITCHING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
200
UNITS
VDRM ≤ 600 V
VDRM ≤ 800 V
VDRM ≤ 1000 V
VDRM ≤ 1600 V
TJ = TJ maximum, VDM = Rated VDRM
Gate pulse = 20 V, 15 Ω, tp = 6 µs, tr = 0.1 µs maximum
ITM = (2 x rated dI/dt) A
180
Maximum rate of rise
of turned-on current
dI/dt
A/µs
160
150
TJ = 25 °C,
at rated VDRM/VRRM, TJ = 125 °C
Typical turn-on time
tgt
trr
0.9
4
TJ = TJ maximum,
Typical reverse recovery time
Typical turn-off time
I
TM = IT(AV), tp > 200 µs, dI/dt = - 10 A/µs
µs
TJ = TJ maximum, ITM = IT(AV), tp > 200 µs, VR = 100 V,
dI/dt = - 10 A/µs, dV/dt = 20 V/µs linear to 67 % VDRM
gate bias 0 V to 100 W
tq
,
110
Note
• tq = 10 µs up to 600 V, tq = 30 µs up to 1600 V available on special request
BLOCKING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
100
UNITS
TJ = TJ maximum linear to 100 % rated VDRM
TJ = TJ maximum linear to 67 % rated VDRM
Maximum critical rate of rise
of off-state voltage
dV/dt
V/µs
300 (1)
Note
(1)
Available with: dV/dt = 1000 V/µs, to complete code add S90 i.e. 22RIA120S90
TRIGGERING
PARAMETER
SYMBOL
PGM
TEST CONDITIONS
VALUES
8.0
UNITS
Maximum peak gate power
Maximum average gate power
Maximum peak positive gate current
Maximum peak negative gate voltage
TJ = TJ maximum
W
PG(AV)
IGM
2.0
TJ = TJ maximum
TJ = TJ maximum
TJ = - 65 °C
1.5
A
V
-VGM
10
Maximum required gate trigger
current/voltage are the lowest
value which will trigger all units
6 V anode to cathode applied
90
DC gate current required to trigger
IGT
TJ = 25 °C
60
mA
TJ = 125 °C
TJ = - 65 °C
TJ = 25 °C
TJ = 125 °C
35
3.0
2.0
1.0
2.0
DC gate voltage required to trigger
DC gate current not to trigger
VGT
V
IGD
TJ = TJ maximum, VDRM = Rated value
Maximum gate current/voltage
mA
not to trigger is the maximum
value which will not trigger any
unit with rated VDRM anode to
cathode applied
TJ = TJ maximum,
DRM = Rated value
DC gate voltage not to trigger
VGD
0.2
V
V
Document Number: 93700
Revision: 19-Sep-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
3
22RIA Series
Medium Power Thyristors
(Stud Version), 22 A
Vishay High Power Products
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum operating junction
and storage temperature range
TJ, TStg
- 65 to 125
°C
Maximum thermal resistance,
junction to case
RthJC
DC operation
0.86
0.35
K/W
Maximum thermal resistance,
case to heatsink
RthCS
Mounting surface, smooth, flat and greased
TO NUT
TO DEVICE
20 (27.5)
0.23 (0.32)
2.3 (3.1)
25
0.29
2.8
lbf ⋅ in
kgf · m
N · m
g
Lubricated threads
(Non-lubricated threads)
Mounting torque
14
Approximate weight
Case style
0.49
oz.
See dimensions - link at the end of datasheet
TO-208AA (TO-48)
ΔRthJC CONDUCTION
CONDUCTION ANGLE
SINUSOIDAL CONDUCTION
RECTANGULAR CONDUCTION
TEST CONDITIONS
UNITS
0.21
0.25
0.31
0.45
0.76
0.15
0.25
0.34
0.47
0.76
180°
120°
90°
TJ = TJ maximum
K/W
60°
30°
Note
• The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
130
120
110
100
90
130
120
110
100
90
22RIA Series
(DC) = 0.86 K/W
22RIA Series
(DC) = 0.86 K/W
R
R
thJC
thJC
Conduction Angle
Conduction Period
30°
30°
60°
60°
90°
90°
120°
120°
180°
180°
DC
30
Average On-state Current (A)
Fig. 2 - Current Ratings Characteristics
80
80
0
5
10
Average On-state Current (A)
Fig. 1 - Current Ratings Characteristics
15
20
25
0
10
20
40
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For technical questions, contact: ind-modules@vishay.com
Document Number: 93700
Revision: 19-Sep-08
22RIA Series
Medium Power Thyristors
(Stud Version), 22 A
Vishay High Power Products
40
35
30
25
20
15
10
5
R
180°
120°
90°
=
1
K
60°
/
W
30°
RMS Limit
-
D
e
l
t
a
R
5K
/
W
Conduction Angle
22RIA Series
T = 125°C
J
0
0
5
Average On-state Current (A)
Fig. 3 - On-State Power Loss Characteristics
10
15
20
205
25
50
75
100
125
Maximum Allowable Ambient Temperature (°C)
50
45
40
35
30
25
20
15
10
5
DC
180°
120°
90°
t
h
S
A
60°
30°
RMS Limit
Conduction Period
22RIA Series
T = 125°C
J
0
0
5
10 15 20 25 30 305
25
Maximum Allowable Ambient Temperature (°C)
Fig. 4 - On-State Power Loss Characteristics
50
75
100
125
Average On-state Current (A)
400
375
350
325
300
275
250
225
200
175
150
375
350
325
300
275
250
225
200
175
150
At Any Rated Load Condition And With
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
Rated V
Applied Following Surge.
RRM
Initial T = 125°C
J
Initial T = 125°C
@60 Hz 0.0083 s
@50 Hz 0.0100 s
J
No Voltage Reapplied
Rated V
Reapplied
RRM
22RIA Series
22RIA Series
0.01
0.1
Pulse Train Duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
1
1
10
100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
Document Number: 93700
Revision: 19-Sep-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
5
22RIA Series
Medium Power Thyristors
(Stud Version), 22 A
Vishay High Power Products
1000
100
10
T = 25°C
J
T = 125°C
J
22RIA Series
1
0.5
1
1.5
Instantaneous On-state Voltage (V)
Fig. 7 - Forward Voltage Drop Characteristics
2
2.5
3
1
Steady State Value
= 0.86 K/W
R
thJC
(DC Operation)
0.1
22RIA Series
0.01
0.001
0.01
0.1
Square Wave Pulse Duration (s)
1
10
Fig. 8 - Thermal Impedance ZthJC Characteristics
100
10
1
Rectangular gate pulse
(1) PGM = 16W, tp = 4ms
(2) PGM = 30W, tp = 2ms
(3) PGM = 60W, tp = 1ms
(4) PGM = 60W, tp = 1ms
a) Recommended load line for
rated di/dt : 10V, 20ohms
tr <=0.5 µs, tp >= 6 µs
b) Recommended load line for
<=30%rated di/dt : 10V, 65ohms
tr<=1 µs, tp >= 6 µs
(a)
(b)
(4)
(3)
(2)
(1)
VGD
IGD
22RIA Series Frequency Limited by PG(AV)
0.1
0.001
0.01
0.1
1
10
100
Instantaneous Gate Current (A)
Fig. 9 - Gate Characteristics
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For technical questions, contact: ind-modules@vishay.com
Document Number: 93700
Revision: 19-Sep-08
22RIA Series
Medium Power Thyristors
(Stud Version), 22 A
Vishay High Power Products
ORDERING INFORMATION TABLE
Device code
22
RIA 120
M
S90
1
2
3
4
5
1
2
3
4
-
-
-
-
Current code
Essential part number
Voltage code x 10 = VRRM (see Voltage Ratings table)
None = Stud base TO-208AA (TO-48) 1/4" 28UNF-2A
M = Stud base TO-208AA (TO-48) M6 x 1
-
Critical dV/dt:
5
None = 300 V/µs (standard value)
S90 = 1000 V/µs (special selection)
LINKS TO RELATED DOCUMENTS
Dimensions
http://www.vishay.com/doc?95333
Document Number: 93700
Revision: 19-Sep-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
7
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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