3N248-1-E4 [VISHAY]
DIODE 1.5 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE, PLASTIC, KBPM, 4 PIN, Bridge Rectifier Diode;
| 型号： | 3N248-1-E4 |
| 厂家： | 
VISHAY |
| 描述： | DIODE 1.5 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE, PLASTIC, KBPM, 4 PIN, Bridge Rectifier Diode 二极管 |
| 文件： | 总2页 (文件大小：32K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
KBP005M thru KBP10M, 3N246 thru 3N252
Vishay Semiconductors
Glass Passivated Single-Phase
Bridge Rectifiers
Rev. Voltage 50 to 1000V
Forward Current 1.5A
Case Style KBPM
Features
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
0.600 (15.24)
0.560 (14.22)
0.125 x 45o
(3.2)
• This series is UL listed under Recognized Component
Index, file number E54214
• Glass passivated chip junctions
• High surge current capability
0.460 (11.68)
0.420 (10.67)
0.500 (12.70)
0.460 (11.68)
Dimensions in inches
and (millimeters)
• Ideal for printed circuit boards
• High temperature soldering guaranteed:
260°C/10 seconds at 5 lbs. (2.3kg) tension
60
(15.2)
0.50 (12.7) Min.
MIN.
Mechanical Data
0.060
(1.52)
0.034 (0.86)
0.028 (0.76)
DIA.
Case: Molded plastic body over passivated junctions
Terminals: Plated leads solderable per MIL-STD-750,
Method 2026
Polarity: Polarity symbols marked on case
Mounting Position: Any
0.160 (4.1)
0.140 (3.6)
0.105 (2.67)
0.085 (2.16)
0.200 (5.08)
0.180 (4.57)
Weight: 0.06 ounce, 1.7 grams
Packaging codes/options:
Polarity shown on front side of case: positive lead by beveled corner
1/600 EA. per Bulk Tray Stack
Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
KBP KBP KBP KBP KBP KBP KBP
005M 01M 02M 04M 06M 08M 10M
Parameter
Symb.
Unit
3N246 3N247 3N248 3N249 3N250 3N251 3N252
* Maximum repetitive peak reverse voltage
* Maximum RMS voltage
VRRM
VRMS
VDC
50
35
50
100
70
200
140
200
400
280
400
1.5
600
420
600
800 1000
560 700
800 1000
V
V
V
A
* Maximum DC blocking voltage
100
Max. average forward output rectified current at TA = 40°C IF(AV)
* Peak forward surge current single half sine-wave
IFSM
50
30
A
superimposed on rated load (JEDEC Method) TJ =150°C
Rating for fusing (t < 8.3ms)
I2t
10
A2sec
°C/W
°C
Typical thermal resistance per leg(1)
RθJA
RθJL
40
13
* Operating junction and storage temperature range
TJ, TSTG
–55 to +150
Electrical Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
* Max. instantaneous at
forward voltage drop at
1.0A per leg
1.57A per leg
1.0
1.3
VF
V
* Maximum DC reverse current
at rated DC blocking voltage per leg
TA = 25°C
TA = 125°C
5.0
500
IR
µA
Typical junction capacitance per leg at 4.0V, 1MHz
CJ
15
pF
Note: (1) Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with, 0.47 x 0.47" (12 x12mm) copper pads
* JEDEC registered values
Document Number 88531
18-Jan-02
www.vishay.com
1
KBP005M thru KBP10M, 3N246 thru 3N252
Vishay Semiconductors
Ratings and
Characteristic Curves(TA = 25°C unless otherwise noted)
Fig. 1 – Derating Curve Output
Rectified Current
Fig. 2 – Maximum Non-Repetitive
Peak Forward Surge Current
1.6
1.4
60
50
40
30
20
10
0
Single Half Sine-Wave
(JEDEC Method)
60HZ Resistive or
Inductive Load
1.2
1.0
0.8
0.6
0.4
0.2
0
TA = 25°C
P.C.B. Mounted with
0.47 x 0.47" (12 x 12mm)
Copper pads
TJ = 150°C
Capacitive Load
Ipk/IAV = 5.0
Ipk/IAV = 10
Ipk/IAV = 20
(per leg)
1.0 Cycle
10
20
40
60
80
100
120
140 150
1
100
Ambient Temperature (°C)
Number of Cycles at 60H
Z
Fig. 4 –Typical Reverse Leakage
Characteristics Per Leg
Fig. 3 – Typical Forward
Characteristics Per Leg
20
10
10
TJ = 125°C
TJ = 100°C
TJ = 25°C
Pulse Width = 300µs
1% Duty Cycle
1
1
0.1
0.01
0.1
TJ = 25°C
0.01
0
20
40
60
80
100
0.4
0.6
0.8
1.0
1.2
1.4
1.6
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Forward Voltage (V)
Fig. 5 – Typical Junction Capacitance
Per Leg
100
10
1
TJ = 25°C
f = 1.0MHZ
Vsig = 50mVp-p
0.1
1
10
100
Reverse Voltage (V)
www.vishay.com
2
Document Number 88531
18-Jan-02
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