3N255/72 [VISHAY]
Bridge Rectifier Diode, 1 Phase, 2A, 200V V(RRM), Silicon, LEAD FREE, PLASTIC, CASE KBPM, 4 PIN;
| 型号： | 3N255/72 |
| 厂家： | 
VISHAY |
| 描述： | Bridge Rectifier Diode, 1 Phase, 2A, 200V V(RRM), Silicon, LEAD FREE, PLASTIC, CASE KBPM, 4 PIN |
| 文件： | 总4页 (文件大小：199K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2KBP005M thru 2KBP10M, 3N253 thru 3N259
Vishay General Semiconductor
Glass Passivated Single-Phase Bridge Rectifier
Case Style KBPM
Major Ratings and Characteristics
IF(AV)
VRRM
IFSM
IR
2 A
50 V to 1000 V
60 A
5 µA
VF
1.1 V
Tj max.
150 °C
~
~
~
~
Features
Mechanical Data
• UL Recognition file number E54214
• Ideal for printed circuit board
• High surge current capability
• High case dielectric strength
• Solder Dip 260 °C, 40 seconds
Case: KBPM
Epoxy meets UL-94V-0 Flammability rating
Terminals: Silver plated (E4 Suffix) leads, solderable
per J-STD-002B and JESD22-B102D
Polarity: As marked on body
Typical Applications
General purpose use in ac-to-dc bridge full wave rec-
tification for Switching Power Supply, Home Appli-
ances, Office Equipment, and Telecommunication
applications
Maximum Ratings
Ratings at 25 °C ambient temperature unless otherwise specified.
Parameter
Symbols 2KBP
005M
2KBP
01M
2KBP
02M
2KBP
04M
2KBP
06M
2KBP
08M
2KBP
10M
Units
3N253 3N254 3N255 3N256 3N257 3N258 3N259
Maximum repetitive peak reverse voltage
Maximum RMS voltage
VRRM
VRMS
VDC
50
35
50
100
70
200
140
200
400
280
400
2.0
600
420
600
800
560
800
1000
700
V
V
V
A
Maximum DC blocking voltage
100
1000
Max. average forward output rectified current at
IF(AV)
TA = 55 °C
Peak forward surge current single half sine-
wave superimposed on rated load
IFSM
60
A
I2t
A2sec
°C
Rating for fusing (t < 8.3 ms)
15
Operating junction and storage temperature
range
TJ,TSTG
- 55 to + 165
Document Number 88532
08-Jul-05
www.vishay.com
1
2KBP005M thru 2KBP10M, 3N253 thru 3N259
Vishay General Semiconductor
Electrical Characteristics
Ratings at 25 °C ambient temperature unless otherwise specified.
Parameter
Test condition Symbols 2KBP
005M
2KBP
01M
2KBP
02M
2KBP
04M
2KBP
06M
2KBP
08M
2KBP
10M
Units
3N253 3N254 3N255 3N256 3N257 3N258 3N259
1.1
Maximum instantaneous
forward voltage drop per leg
at 3.14 A
VF
IR
V
Maximum DC reverse
current at rated DC blocking
voltage per leg
TA = 25 °C
5.0
500
µA
TA = 125 °C
Typical junction capacitance at 4.0 V, 1 MHz
per leg
CJ
25
pF
Thermal Characteristics
Ratings at 25 °C ambient temperature unless otherwise specified.
Parameter
Symbols 2KBP
005M
2KBP
01M
2KBP
02M
2KBP
04M
2KBP
06M
2KBP
08M
2KBP
10M
Units
°C/W
3N253 3N254 3N255 3N256 3N257 3N258 3N259
Typical thermal resistance per leg(1)
Notes:
RθJA
RθJL
30
11
(1) Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with, 0.47 x 0.47" (12 x12 mm) copper pads.
Ratings and Characteristics Curves
(TA = 25 °C unless otherwise noted)
60
2.0
TJ = 150 °C
Single Sine-Wave
60 HZ
Resistive or
Inductive Load
50
40
30
20
10
0
1.5
1.0
0.5
0
P.C.B. Mounted
with 0.47 x 0.47"
(12 x 12 mm)
Copper Pads
Capacitive Load
I(pk)
5.0
10
20
=
I(AV)
1.0 Cycle
(Per Leg)
1
10
Number of Cycles at 60 HZ
100
170
160
20
40
60
80
100
120
140
Ambient Temperature (°C)
Figure 1. Derating Curve Output Rectified Current
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
Per Leg
www.vishay.com
Document Number 88532
08-Jul-05
2
2KBP005M thru 2KBP10M, 3N253 thru 3N259
Vishay General Semiconductor
20
10
100
T
= 25°C
J
f = 1.0 MHZ
Vsig = 50mVp-p
1
0.1
10
TJ = 25 °C
Pulse Width = 300 µs
1% Duty Cycle
1
0.1
0.01
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1
10
100
Instantaneous Forward Voltage (V)
Reverse Voltage (V)
Figure 3. Typical Forward Characteristics Per Leg
Figure 5. Typical Junction Capacitance Per Leg
100
TJ = 125°C
10
1
TJ = 100°C
0.1
0.01
TJ = 25°C
80
0
20
40
60
100
Percent of Rated Peak Reverse Voltage (%)
Figure 4. Typical Reverse Leakage Characteristics Per Leg
Package outline dimensions in inches (millimeters)
Case Style KBPM
0.600 (15.24)
o
0.125 x 45
(3.2)
0.560 (14.22)
0.460 (11.68)
0.420 (10.67)
0.500 (12.70)
0.460 (11.68)
60
(15.2)
MIN.
0.50 (12.7) Min.
0.060
(1.52)
0.034 (0.86)
0.028 (0.76)
DIA.
0.160 (4.1)
0.140 (3.6)
0.105 (2.67)
0.085 (2.16)
0.200 (5.08)
0.180 (4.57)
Polarity shown on front side of case: positive lead by beveled corner
Document Number 88532
08-Jul-05
www.vishay.com
3
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
www.vishay.com
1
相关型号：
3N257-E4
DIODE 2 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE, LEAD FREE, PLASTIC, CASE KBPM, 4 PIN, Bridge Rectifier Diode
VISHAY
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