40CTQ150PBF_12 [VISHAY]
Schottky Rectifier, 2 x 20 A; 肖特基整流器， 2× 20 A
| 型号： | 40CTQ150PBF_12 |
| 厂家： | 
VISHAY |
| 描述： | Schottky Rectifier, 2 x 20 A |
| 文件： | 总7页 (文件大小：154K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VS-40CTQ150PbF, VS-40CTQ150-N3
www.vishay.com
Vishay Semiconductors
Schottky Rectifier, 2 x 20 A
FEATURES
Base
common
cathode
2
• 175 °C TJ operation
• Very low forward voltage drop
• High frequency operation
• High
purity,
high
temperature
epoxy
encapsulation for enhanced mechanical strength
and moisture resistance
Anode
Anode
2
Common
cathode
1
3
TO-220AB
• Guard ring for enhanced ruggedness and long
term reliability
• Compliant to RoHS Directive 2002/95/EC
PRODUCT SUMMARY
• Designed and qualified according to JEDEC-JESD47
Package
TO-220AB
2 x 20 A
150 V
• Halogen-free according to IEC 61249-2-21 definition
(-N3 only)
IF(AV)
VR
DESCRIPTION
VF at IF
0.71 V
The VS-40CTQ... center tap Schottky rectifier has been
optimized for very low forward voltage drop, with moderate
leakage. The proprietary barrier technology allows for
reliable operation up to 175 °C junction temperature. Typical
applications are in switching power supplies, converters,
freewheeling diodes, and reverse battery protection.
I
RM max.
15 mA at 125 °C
175 °C
TJ max.
Diode variation
EAS
Common cathode
1.0 mJ
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
IF(AV)
VRRM
IFSM
CHARACTERISTICS
VALUES
40
UNITS
Rectangular waveform
A
V
150
tp = 5 μs sine
1500
A
VF
20 Apk, TJ = 125 °C (per leg)
0.71
V
TJ
- 55 to 175
°C
VOLTAGE RATINGS
PARAMETER
SYMBOL
VS-40CTQ150PbF VS-40CTQ150-N3
UNITS
Maximum DC reverse voltage
Maximum working peak reverse voltage
VR
150
150
V
VRWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES UNITS
Maximum average
forward current
See fig. 5
per leg
20
IF(AV)
50 % duty cycle at TC = 140 °C, rectangular waveform
per device
40
A
Maximum peak one cycle non-repetitive
surge current per leg
See fig. 7
5 µs sine or 3 µs rect. pulse
10 ms sine or 6 ms rect. pulse
1500
Following any rated load
condition and with rated
IFSM
V
RRM applied
250
Non-repetitive avalanche energy per leg
Repetitive avalanche current per leg
EAS
IAR
TJ = 25 °C, IAS = 1.5 A, L = 0.9 mH
1.0
1.5
mJ
A
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical
Revision: 26-Aug-11
Document Number: 94214
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-40CTQ150PbF, VS-40CTQ150-N3
www.vishay.com
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
0.93
1.16
0.71
0.85
50
UNITS
20 A
TJ = 25 °C
40 A
Maximum forward voltage drop per leg
See fig. 1
(1)
VFM
V
20 A
TJ = 125 °C
40 A
TJ = 25 °C
TJ = 125 °C
µA
mA
pF
Maximum reverse leakage current per leg
See fig. 2
(1)
IRM
VR = Rated VR
15
Maximum junction capacitance per leg
Typical series inductance per leg
Maximum voltage rate of change
CT
LS
VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C
Measured lead to lead 5 mm from package body
Rated VR
450
8.0
nH
dV/dt
10 000
V/μs
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum junction and storage
temperature range
TJ, TStg
- 55 to 175
°C
Maximum thermal resistance,
junction to case per leg
DC operation
See fig. 4
1.5
0.75
0.5
RthJC
Maximum thermal resistance,
junction to case per package
DC operation
°C/W
Typical thermal resistance,
case to heatsink
RthCS
Mounting surface, smooth and greased
2
g
Approximate weight
0.07
oz.
minimum
maximum
6 (5)
12 (10)
kgf · cm
(lbf · in)
Mounting torque
Marking device
Non-lubricated threads
Case style TO-220AB
40CTQ150
Revision: 26-Aug-11
Document Number: 94214
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-40CTQ150PbF, VS-40CTQ150-N3
www.vishay.com
Vishay Semiconductors
1000
100
TJ = 175 °C
100
TJ = 150 °C
10
TJ = 125 °C
TJ = 100 °C
TJ = 175 °C
TJ = 125 °C
TJ = 25 °C
1
10
TJ = 75 °C
0.1
0.01
TJ = 50 °C
TJ = 25 °C
0.001
1
0
20
40
60
80 100 120 140 160
0
0.4
0.8
1.2
1.6
VR - Reverse Voltage (V)
VFM - Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
1000
TJ = 25 °C
100
10
0
40
80
120
160
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
10
1
PDM
t1
D = 0.75
D = 0.50
t2
0.1
Single pulse
(thermal resistance)
D = 0.33
D = 0.25
D = 0.20
Notes:
1. Duty factor D = t1/t2
2. Peak TJ = PDM x ZthJC + TC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
Revision: 26-Aug-11
Document Number: 94214
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-40CTQ150PbF, VS-40CTQ150-N3
www.vishay.com
Vishay Semiconductors
180
160
140
120
100
25
20
RMS limit
DC
DC
15
DC = 0.20
DC = 0.25
DC = 0.33
DC = 0.50
DC = 0.75
10
Square wave (D = 0.50)
80% VR applied
5
0
See note (1)
0
5
10
15
20
25
30
0
5
10
15
20
25
30
IF(AV) - Average Forward Current (A)
IF(AV) - Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
10 000
At any rated load condition
and with rated VRRM applied
following surge
1000
100
10
100
1000
10 000
tp - Square Wave Pulse Duration (µs)
Fig. 7 - Maximum Non-Repetitive Surge Current
Note
(1)
Formula used: TC = TJ - (Pd + PdREV) x RthJC
;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % VR applied
Revision: 26-Aug-11
Document Number: 94214
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-40CTQ150PbF, VS-40CTQ150-N3
www.vishay.com
Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS- 40
C
T
Q
150 PbF
1
2
3
4
5
6
7
-
-
-
Vishay Semiconductors product
Current rating (40 = 40 A)
Circuit configuration:
C = Common cathode
Package:
1
2
3
-
4
T = TO-220
-
-
-
Schottky “Q” series
5
6
7
Voltage ratings (150 = 150 V)
Environmental digit
PbF = Lead (Pb)-free and RoHS compliant
-N3 = Halogen-free, RoHS compliant, and totally lead (Pb)-free
ORDERING INFORMATION (Example)
PREFERRED P/N
VS-40CTQ150PbF
VS-40CTQ150-N3
QUANTITY PER T/R
MINIMUM ORDER QUANTITY
PACKAGING DESCRIPTION
50
50
1000
1000
Antistatic plastic tube
Antistatic plastic tube
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95222
www.vishay.com/doc?95225
www.vishay.com/doc?95028
TO-220AB PbF
TO-220AB -N3
Part marking information
Revision: 26-Aug-11
Document Number: 94214
5
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
TO-220AB
DIMENSIONS in millimeters and inches
B
Seating
plane
A
A
(6)
Thermal pad
E
Ø P
0.014 B A
A
(E)
M
M
(7)
E2
A1
1
3
Q
2
D
D
C
(6)
(H1)
H1
(2)
L1
(7)
C
(6)
D2
D
Detail B
(6)
D1
3 x b
3 x b2
1
3
2
Detail B
C
E1 (6)
L
(b, b2)
b1, b3
Base metal
Plating
View A - A
c1
(4)
c
c
A
2 x e
e1
(4)
A2
Section C - C and D - D
M
M
0.015 B A
Lead assignments
Lead tip
Diodes
Conforms to JEDEC outline TO-220AB
1. - Anode/open
2. - Cathode
3. - Anode
MILLIMETERS
INCHES
MILLIMETERS
INCHES
MIN.
0.398
0.270
-
SYMBOL
NOTES
SYMBOL
NOTES
MIN.
4.25
1.14
2.56
0.69
0.38
1.20
1.14
0.36
0.36
14.85
8.38
11.68
MAX.
4.65
1.40
2.92
1.01
0.97
1.73
1.73
0.61
0.56
15.25
9.02
12.88
MIN.
0.167
0.045
0.101
0.027
0.015
0.047
0.045
0.014
0.014
0.585
0.330
0.460
MAX.
0.183
MIN.
10.11
6.86
-
MAX.
10.51
8.89
0.76
2.67
5.28
6.48
14.02
3.82
3.73
3.00
MAX.
0.414
0.350
0.030
0.105
0.208
0.255
0.552
0.150
0.147
0.118
A
A1
A2
b
E
E1
E2
e
3, 6
6
0.055
0.115
0.040
0.038
0.068
0.068
0.024
0.022
0.600
0.355
0.507
7
2.41
4.88
6.09
13.52
3.32
3.54
2.60
0.095
0.192
0.240
0.532
0.131
0.139
0.102
b1
b2
b3
c
c1
D
4
4
e1
H1
L
6, 7
2
L1
Ø P
Q
4
3
D1
D2
90° to 93°
90° to 93°
6
Notes
(1)
(2)
(3)
(7)
(8)
Dimensioning and tolerancing as per ASME Y14.5M-1994
Lead dimension and finish uncontrolled in L1
Dimension D, D1 and E do not include mold flash. Mold flash
shall not exceed 0.127 mm (0.005") per side. These dimensions
are measured at the outermost extremes of the plastic body
Dimension b1, b3 and c1 apply to base metal only
Controlling dimensions: inches
Dimensions E2 x H1 define a zone where stamping and
singulation irregularities are allowed
Outline conforms to JEDEC TO-220, except A2 (maximum) and
D2 (minimum) where dimensions are derived from the actual
package outline
(4)
(5)
(6)
Thermal pad contour optional within dimensions E, H1, D2 and
E1
Document Number: 95222
Revision: 08-Mar-11
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1
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Revision: 12-Mar-12
Document Number: 91000
1
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