40TTS12PBF [VISHAY]
Phase Control SCR, 40 A; 相位控制可控硅， 40 A
| 型号： | 40TTS12PBF |
| 厂家： | 
VISHAY |
| 描述： | Phase Control SCR, 40 A |
| 文件： | 总7页 (文件大小：118K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
40TTS12PbF High Voltage Series
Vishay High Power Products
Phase Control SCR, 40 A
DESCRIPTION/FEATURES
2
The 40TTS12PbF High Voltage Series of silicon
controlled rectifiers are specifically designed for
medium power switching and phase control
applications. The glass passivation technology
(A)
Available
RoHS*
COMPLIANT
used has reliable operation up to 140 °C junction
temperature. Low Igt parts available.
1 (K)
TO-220AB
(G) 3
Typical applications are in input rectification (soft start) and
these products are designed to be used with Vishay HPP
input diodes, switches and output rectifiers which are
available in identical package outlines.
PRODUCT SUMMARY
VT at 80 A
< 1.6 V
350 A
ITSM
This product has been designed and qualified for industrial
level and lead (Pb)-free (“PbF” suffix).
VRRM
1200 V
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
VALUES
25
UNITS
IT(AV)
Sinusoidal waveform
A
IRMS
40
VRRM/VDRM
ITSM
1200
350
V
A
VT
TJ = 25 °C
1.6
V
dV/dt
500
V/µs
A/µs
°C
dI/dt
150
TJ
- 40 to 140
VOLTAGE RATINGS
PART NUMBER
VRRM, MAXIMUM PEAK
REVERSE VOLTAGE
V
V
DRM, MAXIMUM
TJ
°C
PEAK DIRECT VOLTAGE
V
40TTS12PbF
1200
1200
- 25 to 140
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 94390
Revision: 24-Apr-08
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
1
40TTS12PbF High Voltage Series
Phase Control SCR, 40 A
Vishay High Power Products
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
IT(AV)
IRMS
TEST CONDITIONS
VALUES
25
UNITS
Maximum average on-state current
Maximum RMS on-state current
TC = 93 °C, 180° conduction half sine wave
40
A
10 ms sine pulse, rated VRRM applied
10 ms sine pulse, no voltage reapplied
10 ms sine pulse, rated VRRM applied
10 ms sine pulse, no voltage reapplied
t = 0.1 to 10 ms, no voltage reapplied
80 A, TJ = 25 °C
300
350
450
630
6300
1.6
Maximum peak, one-cycle
non-repetitive surge current
ITSM
Maximum I2t for fusing
I2t
A2s
Maximum I2√t for fusing
I2√t
VTM
rt
A2√s
V
Maximum on-state voltage
Low level value of on-state slope resistance
Low level value of threshold voltage
11.4
0.96
0.5
mΩ
V
TJ = 140 °C
TJ = 25 °C
VT(TO)
Maximum reverse and direct leakage current
IRRM/IDRM
VR = Rated VRRM/VDRM
TJ = 140 °C
10
mA
Holding current
IH
IL
Anode supply = 6 V, resistive load, initial IT = 1 A
Anode supply = 6 V, resistive load
100
200
500
150
Maximum latching current
Maximum rate of rise of off-state voltage
Maximum rate of rise of turned-on current
dV/dt
dI/dt
V/µs
A/µs
TRIGGERING
PARAMETER
SYMBOL
PGM
TEST CONDITIONS
VALUES
8.0
UNITS
Maximum peak gate power
W
Maximum average gate power
Maximum peak positive gate current
Maximum peak negative gate voltage
Maximum required DC gate current to trigger
PG(AV)
+ IGM
- VGM
IGT
2.0
1.5
A
V
10
Anode supply = 6 V, resistive load, TJ = 25 °C
Anode supply = 6 V, resistive load, TJ = 25 °C
35
mA
Maximum required DC gate
voltage to trigger
VGT
1.3
V
Maximum DC gate voltage not to trigger
Maximum DC gate current not to trigger
VGD
IGD
0.2
1.5
TJ = 140 °C, VDRM = Rated value
mA
SWITCHING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Typical turn-on time
Typical reverse recovery time
Typical turn-off time
tgt
trr
tq
TJ = 25 °C
0.9
4
µs
TJ = 140 °C
110
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For technical questions, contact: diodes-tech@vishay.com
Document Number: 94390
Revision: 24-Apr-08
40TTS12PbF High Voltage Series
Phase Control SCR, 40 A
Vishay High Power Products
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum junction and storage
temperature range
TJ, TStg
- 40 to 140
°C
Maximum thermal resistance,
junction to case
RthJC
RthJA
RthCS
DC operation
0.8
60
Maximum thermal resistance,
junction to ambient
°C/W
Typical thermal resistance,
case to heatsink
Mounting surface, smooth and greased
0.5
2
g
Approximate weight
0.07
oz.
minimum
maximum
6 (5)
kgf · cm
(lbf · in)
Mounting torque
Marking device
12 (10)
Case style TO-220AB
40TTS12
Document Number: 94390
Revision: 24-Apr-08
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
3
40TTS12PbF High Voltage Series
Phase Control SCR, 40 A
Vishay High Power Products
140
70
60
50
40
30
20
10
0
RthJC (DC) = 0.8 ˚C/W
130
DC
180˚
120˚
90˚
120
Conduction Angle
60˚
110
30˚
30˚
100
60˚
RMS Limit
90˚
90
120˚
Conduction Period
180˚
80
Tj = 125˚C
30
70
0
5
10
15
20
25
30
0
10
20
40
Average On-state Current (A)
Average On-state Current (A)
Fig. 1 - Current Rating Characteristics
Fig. 4 - On-State Power Loss Characteristics
140
130
120
110
100
90
280
At Any Rated Load Condition And With
RthJC (DC) = 0.8 ˚C/W
Conduction Period
Rated Vrrm Applied Following Surge.
260
Initial Tj = 125˚C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
240
220
200
180
160
140
120
30˚
60˚
90˚
80
120˚
180˚
DC
70
1
10
100
0
5
10 15 20 25 30 35 40 45
Number of Equal Amplitude Half Cycle Current Pulses (N)
Average On-state Current (A)
Fig. 2 - Current Rating Characteristics
Fig. 5 - Maximum Non-Repetitive Surge Current
400
60
50
40
30
20
10
0
Maximum Non Repetitive Surge Current
180˚
120˚
90˚
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
350
Initial Tj = 125˚C
60˚
No Voltage Reapplied
Rated Vrrm Reapplied
300
250
200
150
100
30˚
RMS Limit
Conduction Angle
Tj = 125˚C
0.01
0.1
1
10
0
5
10
15
20
25
30
Pulse Train Duration (s)
Average On-state Current (A)
Fig. 6 - Maximum Non-Repetitive Surge Current
Fig. 3 - On-State Power Loss Characteristics
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For technical questions, contact: diodes-tech@vishay.com
Document Number: 94390
Revision: 24-Apr-08
40TTS12PbF High Voltage Series
Phase Control SCR, 40 A
Vishay High Power Products
1000
100
10
Tj = 25˚C
Tj = 125˚C
1
0
1
2
Instantaneous On-state Voltage (V)
Fig. 7 - On-State Voltage Drop Characteristics
3
4
5
100
10
1
Rectangular gate pulse
(1) PGM = 40 W, tp = 1 ms
a)Recommended load line for
rated di/dt: 10 V, 20 ohms
tr = 0.5 µs, tp >= 6 µs
(2) PGM = 20 W, tp = 2 ms
(3) PGM = 8 W, tp = 5 ms
(4) PGM = 4 W, tp = 10 ms
b)Recommended load line for
<= 30% rated di/dt: 10 V, 65 ohms
tr = 1 µs, tp >= 6 µs
(a)
(b)
VGD
(4)
(3)
(1)
(2)
Frequency Limited by PG(AV)
IGD
0.1
0.001
0.01
0.1
1
10
100
Instantaneous Gate Current (A)
Fig. 8 - Gate Characteristics
1
Steady State Value
(DC Operation)
0.1
Single Pulse
0.01
0.0001
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Fig. 9 - Thermal Impedance ZthJC Characteristics
Document Number: 94390
Revision: 24-Apr-08
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
5
40TTS12PbF High Voltage Series
Phase Control SCR, 40 A
Vishay High Power Products
ORDERING INFORMATION TABLE
Device code
40
T
T
S
12 PbF
1
2
3
4
5
6
1
2
-
-
Current rating, RMS value
Circuit configuration:
T = Single thyristor
Package:
-
-
3
4
T = TO-220
Type of silicon:
S = Standard recovery rectifier
Voltage rating (12 = 1200 V)
5
6
-
-
None = Standard production
PbF = Lead (Pb)-free
LINKS TO RELATED DOCUMENTS
Dimensions
http://www.vishay.com/doc?95222
http://www.vishay.com/doc?95225
Part marking information
www.vishay.com
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For technical questions, contact: diodes-tech@vishay.com
Document Number: 94390
Revision: 24-Apr-08
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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