63CTQ100GPBF_12 [VISHAY]
Schottky Rectifier, 2 x 30 A; 肖特基整流器， 2× 30 A
| 型号： | 63CTQ100GPBF_12 |
| 厂家： | 
VISHAY |
| 描述： | Schottky Rectifier, 2 x 30 A |
| 文件： | 总7页 (文件大小：163K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VS-63CTQ100GPbF, VS-63CTQ100G-N3
www.vishay.com
Vishay Semiconductors
Schottky Rectifier, 2 x 30 A
FEATURES
Base
common
cathode
2
• 175 °C TJ operation
• Low forward voltage drop
• High frequency operation
• High
purity,
high
temperature
epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
TO-220AB
• Guard ring for enhanced ruggedness and long
term reliability
1
3
2
Anode
Common Anode
• Compliant to RoHS Directive 2002/95/EC
cathode
• Designed and qualified according to JEDEC-JESD47
PRODUCT SUMMARY
• Halogen-free according to IEC 61249-2-21 definition
(-N3 only)
Package
TO-220AB
2 x 30 A
100 V
IF(AV)
DESCRIPTION
VR
This center tap Schottky rectifier has been optimized for low
reverse leakage at high temperature. The proprietary barrier
technology allows for reliable operation up to 175 °C
junction temperature. Typical applications are in switching
power supplies, converters, freewheeling diodes, and
reverse battery protection.
VF at IF
0.69 V
I
RM max.
20 mA at 125 °C
175 °C
TJ max.
Diode variation
EAS
Common cathode
11.25 mJ
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
IF(AV)
VRRM
IFRM
IFSM
CHARACTERISTICS
VALUES
60
UNITS
Rectangular waveform (per device)
A
V
100
TC = 139 °C (per leg)
tp = 5 μs sine
60
A
1500
VF
30 Apk, TJ = 125 °C
Range
0.69
V
TJ
- 65 to 175
°C
VOLTAGE RATINGS
PARAMETER
SYMBOL
VS-63CTQ100GPbF
VS-63CTQ100G-N3
UNITS
Maximum DC reverse voltage
VR
100
100
V
Maximum working peak reverse voltage
VRWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
per leg
30
60
60
Maximum average
forward current
IF(AV)
IFRM
50 % duty cycle at TC = 139 °C, rectangular waveform
Rated VR, square wave, 20 kHz, TC = 140 °C
per device
Peak repetitive forward current per leg
A
5 µs sine or 3 µs rect. pulse
10 ms sine or 6 ms rect. pulse
1500
Following any rated load
condition and with rated
Maximum peak one cycle non-repetitive
surge current per leg
IFSM
VRRM applied
300
Non-repetitive avalanche energy per leg
Repetitive avalanche current per leg
EAS
IAR
TJ = 25 °C, IAS = 0.75 A, L = 40 mH
11.25
mJ
A
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical
0.75
Revision: 29-Aug-11
Document Number: 94508
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-63CTQ100GPbF, VS-63CTQ100G-N3
www.vishay.com
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
TYP.
0.78
0.94
0.64
0.78
0.02
11
MAX.
0.82
1.0
UNITS
30 A
TJ = 25 °C
60 A
(1)
Maximum forward voltage drop
VFM
V
30 A
0.69
0.83
0.3
TJ = 125 °C
60 A
TJ = 25 °C
TJ = 125 °C
Maximum instantaneous reverse current
IRM
VR = Rated VR
mA
20
Maximum junction capacitance
Typical series inductance
CT
LS
VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C
Measured from top of terminal to mounting plane
Rated VR
1100
8.0
pF
nH
Maximum voltage rate of change
dV/dt
10 000
V/µs
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum junction and storage
temperature range
TJ, TStg
- 65 to 175
°C
Maximum thermal resistance,
junction to case per leg
RthJC
RthCS
DC operation
1.2
°C/W
Typical thermal resistance,
case to heatsink
Mounting surface, smooth and greased
0.50
2
g
Approximate weight
0.07
oz.
minimum
maximum
6 (5)
12 (10)
kgf cm
(lbf in)
Mounting torque
Marking device
Non-lubricated threads
Case style TO-220AB
63CTQ100G
Revision: 29-Aug-11
Document Number: 94508
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-63CTQ100GPbF, VS-63CTQ100G-N3
www.vishay.com
Vishay Semiconductors
1000
Tj = 175˚C
1000
100
10
100
150˚C
125˚C
10
100˚C
1
75˚C
50˚C
25˚C
0.1
0.01
0.001
0.0001
0
20
40
60
80
100
Reverse Voltage-VR (V)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
1000
Tj = 25˚C
Tj = 175˚C
Tj = 125˚C
Tj = 25˚C
1
100
0
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
0
20
40
60
80
100
Forward Voltage Drop-VFM (V)
Reverse Voltage-VR (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
10
D = 0.75
1
0.1
D = 0.50
D = 0.33
D = 0.25
D = 0.20
P
DM
t
1
t
Single Pulse
2
(Thermal Resistance)
0.01
0.001
Notes:
1. Duty factor D = t1/ t2
2. Peak Tj = Pdm x ZthJC + Tc
0.00001
0.0001
0.001
0.01
0.1
1
10
t
1, Rectangular Pulse Duration (Seconds)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
Revision: 29-Aug-11
Document Number: 94508
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-63CTQ100GPbF, VS-63CTQ100G-N3
www.vishay.com
Vishay Semiconductors
30
25
180
170
160
150
140
130
120
110
100
90
DC
DC
20
15
10
5
RMS Limit
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
Square wave (D = 0.50)
80% Rated Vr applied
see note (1)
0
0
5
10 15 20 25 30 35 40 45
0
5
10 15 20 25 30 35 40 45
AverageForwardCurrent-I F(AV) (A)
AverageForwardCurrent-I F(AV) (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 6 - Forward Power Loss Characteristics
10000
At Any Rated Load Condition
And With Rated Vrrm Applied
Following Surge
1000
100
10
100
1000
10000
Square Wave Pulse Duration - t p (microsec)
Fig. 7 - Maximum Non-Repetitive Surge Current (Per Leg)
Note
(1)
Formula used: TC = TJ - (Pd + PdREV) x RthJC
;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR
Revision: 29-Aug-11
Document Number: 94508
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-63CTQ100GPbF, VS-63CTQ100G-N3
www.vishay.com
Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS- 63
C
T
Q
100
G
PbF
1
2
3
4
5
6
7
8
-
Vishay Semiconductors product
Current rating (60 A)
1
2
3
4
5
6
7
8
-
-
-
-
-
-
-
C = Common cathode
T = TO-220
Q = Schottky “Q” series
Voltage rating (100 = 100 V)
G = Schottky generation
Environmental digit
PbF = Lead (Pb)-free and RoHS compliant
-N3 = Halogen-free, RoHS compliant, and totally lead (Pb)-free
ORDERING INFORMATION (Example)
PREFERRED P/N
VS-63CTQ100GPbF
VS-63CTQ100G-N3
QUANTITY PER T/R
MINIMUM ORDER QUANTITY
PACKAGING DESCRIPTION
50
50
1000
1000
Antistatic plastic tube
Antistatic plastic tube
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95222
www.vishay.com/doc?95225
www.vishay.com/doc?95028
TO-220AB PbF
TO-220AB -N3
Part marking information
Revision: 29-Aug-11
Document Number: 94508
5
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
TO-220AB
DIMENSIONS in millimeters and inches
B
Seating
plane
A
A
(6)
Thermal pad
E
Ø P
0.014 B A
A
(E)
M
M
(7)
E2
A1
1
3
Q
2
D
D
C
(6)
(H1)
H1
(2)
L1
(7)
C
(6)
D2
D
Detail B
(6)
D1
3 x b
3 x b2
1
3
2
Detail B
C
E1 (6)
L
(b, b2)
b1, b3
Base metal
Plating
View A - A
c1
(4)
c
c
A
2 x e
e1
(4)
A2
Section C - C and D - D
M
M
0.015 B A
Lead assignments
Lead tip
Diodes
Conforms to JEDEC outline TO-220AB
1. - Anode/open
2. - Cathode
3. - Anode
MILLIMETERS
INCHES
MILLIMETERS
INCHES
MIN.
0.398
0.270
-
SYMBOL
NOTES
SYMBOL
NOTES
MIN.
4.25
1.14
2.56
0.69
0.38
1.20
1.14
0.36
0.36
14.85
8.38
11.68
MAX.
4.65
1.40
2.92
1.01
0.97
1.73
1.73
0.61
0.56
15.25
9.02
12.88
MIN.
0.167
0.045
0.101
0.027
0.015
0.047
0.045
0.014
0.014
0.585
0.330
0.460
MAX.
0.183
MIN.
10.11
6.86
-
MAX.
10.51
8.89
0.76
2.67
5.28
6.48
14.02
3.82
3.73
3.00
MAX.
0.414
0.350
0.030
0.105
0.208
0.255
0.552
0.150
0.147
0.118
A
A1
A2
b
E
E1
E2
e
3, 6
6
0.055
0.115
0.040
0.038
0.068
0.068
0.024
0.022
0.600
0.355
0.507
7
2.41
4.88
6.09
13.52
3.32
3.54
2.60
0.095
0.192
0.240
0.532
0.131
0.139
0.102
b1
b2
b3
c
c1
D
4
4
e1
H1
L
6, 7
2
L1
Ø P
Q
4
3
D1
D2
90° to 93°
90° to 93°
6
Notes
(1)
(2)
(3)
(7)
(8)
Dimensioning and tolerancing as per ASME Y14.5M-1994
Lead dimension and finish uncontrolled in L1
Dimension D, D1 and E do not include mold flash. Mold flash
shall not exceed 0.127 mm (0.005") per side. These dimensions
are measured at the outermost extremes of the plastic body
Dimension b1, b3 and c1 apply to base metal only
Controlling dimensions: inches
Dimensions E2 x H1 define a zone where stamping and
singulation irregularities are allowed
Outline conforms to JEDEC TO-220, except A2 (maximum) and
D2 (minimum) where dimensions are derived from the actual
package outline
(4)
(5)
(6)
Thermal pad contour optional within dimensions E, H1, D2 and
E1
Document Number: 95222
Revision: 08-Mar-11
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1
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Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
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Revision: 12-Mar-12
Document Number: 91000
1
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