6EWH06FN-E3 [VISHAY]
Ultralow VF Ultrafast Rectifier, 6 A FRED Pt®; 超低VF超快整流器， 6的FRED Pt®
| 型号： | 6EWH06FN-E3 |
| 厂家： | 
VISHAY |
| 描述： | Ultralow VF Ultrafast Rectifier, 6 A FRED Pt® |
| 文件： | 总8页 (文件大小：150K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
New Product
VS-6EWH06FN-E3
Vishay Semiconductors
Ultralow VF Ultrafast Rectifier, 6 A FRED Pt®
FEATURES
• Hyperfast recovery time, reduced Qrr and soft
recovery
2, 4
• 175 °C maximum operating junction temperature
• For PFC CRM/CCM operation
• Low forward voltage drop
1
N/C
3
Anode
• Low leakage current
D-PAK (TO-252AA)
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• Compliant to RoHS Directive 2002/95/EC
PRODUCT SUMMARY
DESCRIPTION/APPLICATIONS
Package
D-PAK (TO-252AA)
6 A
State of the art hyperfast recovery rectifiers designed with
optimized performance of forward voltage drop, hyperfast
recovery time, and soft recovery.
IF(AV)
VR
600 V
The planar structure and the platinum doped life time
control guarantee the best overall performance,
ruggedness and reliability characteristics.
These devices are intended for use in PFC boost stage in
the AC/DC section of SMPS inverters or as freewheeling
diodes. Their extremely optimized stored charge and low
recovery current minimize the switching losses and reduce
over dissipation in the switching element and snubbers.
VF at IF
2.1 V
trr (typ.)
TJ max.
Diode variation
18 ns
175 °C
Single die
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
VRRM
IF(AV)
TEST CONDITIONS
VALUES
UNITS
Peak repetitive reverse voltage
Average rectified forward current
Non-repetitive peak surge current
Peak repetitive forward current
Operating junction and storage temperatures
600
V
TC = 144 °C
6
70
IFSM
TJ = 25 °C
A
IFM
TC = 144 °C, f = 20 kHz, d = 50 %
12
TJ, TStg
- 65 to 175
°C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Breakdown voltage,
blocking voltage
VBR
VR
,
IR = 100 μA
IF = 6 A
600
-
-
V
-
-
-
-
-
-
1.60
1.26
-
2.1
1.7
50
250
-
Forward voltage
VF
IR
IF = 6 A, TJ = 150 °C
VR = VR rated
Reverse leakage current
μA
TJ = 150 °C, VR = VR rated
VR = 600 V
-
Junction capacitance
Series inductance
CT
LS
3.5
8
pF
nH
Measured lead to lead 5 mm from package body
-
Document Number: 93247
Revision: 31-Mar-11
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
VS-6EWH06FN-E3
Vishay Semiconductors
Ultralow VF Ultrafast Rectifier, 6 A FRED Pt®
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
IF = 1 A, dIF/dt = 100 A/μs, VR = 30 V
IF = 1 A, dIF/dt = 50 A/μs, VR = 30 V
TJ = 25 °C
MIN.
TYP.
MAX.
UNITS
-
-
-
-
-
-
-
-
18
25
-
22
Reverse recovery time
trr
ns
27
-
TJ = 125 °C
37
-
IF = 6 A
TJ = 25 °C
4.1
5.3
57
-
Peak recovery current
IRRM
dIF/dt = 200 A/μs
TJ = 125 °C
A
-
V
R = 390 V
TJ = 25 °C
-
Reverse recovery charge
Qrr
nC
TJ = 125 °C
103
-
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Maximum junction and storage
temperature range
TJ, TStg
- 65
-
175
°C
Thermal resistance,
junction to case per leg
RthJC
-
-
3
°C/W
0.3
g
Approximate weight
Marking device
0.01
oz.
Case style D-PAK (TO-252AA)
6EWH06FN
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For technical questions within your region, please contact one of the following:
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Document Number: 93247
Revision: 31-Mar-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
VS-6EWH06FN-E3
Vishay Semiconductors
Ultralow VF Ultrafast Rectifier, 6 A FRED Pt®
100
10
100
10
TJ = 175 °C
TJ = 150 °C
TJ = 125 °C
TJ = 100 °C
TJ = 175 °C
1
0.1
1
TJ = 125 °C
TJ = 75 °C
0.01
TJ = 50 °C
TJ = 25 °C
1.5
TJ = 25 °C
400 500
VR - Reverse Voltage (V)
0.1
0.001
0
0.5
1.0
2.0
2.5
3.0
0
100
200
300
600
VFM - Forward Voltage Drop (V)
93247_01
93247_02
Fig. 1 - Typical Forward Voltage Drop Characteristics
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
100
10
1
0
100
200
300
400
500
600
93247_03
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
10
1
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
Single pulse
(thermal resistance)
D = 0.01
0.1
0.00001
0.0001
0.001
0.01
0.1
1
93247_04
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
Document Number: 93247
Revision: 31-Mar-11
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
VS-6EWH06FN-E3
Vishay Semiconductors
Ultralow VF Ultrafast Rectifier, 6 A FRED Pt®
180
170
40
35
DC
6 A, TJ = 125 °C
160
35
25
20
15
10
150
140
130
120
110
Square wave (D = 0.50)
80 % rated VR applied
6 A, TJ = 25 °C
See note (1)
0
2
4
6
8
10
100
1000
93247_05
IF(AV) - Average Forward Current (A)
93247_07
dIF/dt (A/µs)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt
14
200
RMS limit
12
180
160
140
120
100
80
10
6 A, TJ = 125 °C
8
D = 0.01
D = 0.02
D = 0.05
6
D = 0.10
D = 0.20
60
4
40
D = 0.50
DC
6 A, TJ = 25 °C
2
0
20
0
100
0
3
6
9
1000
93247_06
I
- Average Forward Current (A)
dIF/dt (A/µs)
Fig. 8 - Typical Stored Charge vs. dIF/dt
93247_08
F(AV)
Fig. 6 - Forward Power Loss Characteristics
Note
(1)
Formula used: TC = TJ - (Pd + PdREV) x RthJC
;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = Rated VR
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For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 93247
Revision: 31-Mar-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
VS-6EWH06FN-E3
Vishay Semiconductors
Ultralow VF Ultrafast Rectifier, 6 A FRED Pt®
VR = 200 V
0.01 Ω
L = 70 μH
D.U.T.
D
dIF/dt
adjust
IRFP250
G
S
Fig. 9 - Reverse Recovery Parameter Test Circuit
(3)
trr
IF
ta
tb
0
(4)
Qrr
(2)
IRRM
0.5 IRRM
(5)
dI(rec)M/dt
0.75 IRRM
dIF/dt
(1)
(4) Qrr - area under curve defined by trr
(1) dIF/dt - rate of change of current
and IRRM
through zero crossing
trr x IRRM
(2) IRRM - peak reverse recovery current
Qrr
=
2
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
(5) dI(rec)M/dt - peak rate of change of
current during tb portion of trr
Fig. 10 - Reverse Recovery Waveform and Definitions
Document Number: 93247
Revision: 31-Mar-11
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
VS-6EWH06FN-E3
Vishay Semiconductors
Ultralow VF Ultrafast Rectifier, 6 A FRED Pt®
ORDERING INFORMATION TABLE
Device code
VS-
6
E
W
H
06
FN TR -E3
1
2
3
4
5
6
7
8
9
1
-
-
-
Vishay Semiconductors product
Current rating (6 = 6 A)
Circuit configuration:
E = Single diode
2
3
-
Package identifier:
4
W = D-PAK
-
-
-
-
-
H = Hyperfast recovery
Voltage rating (06 = 600 V)
FN = TO-252AA
5
6
7
8
9
TR = Tape and reel
Environmental digit:
-E3 = RoHS compliant and terminations lead (Pb)-free
ORDERING INFORMATION (Example)
PREFERRED P/N
QUANTITY PER T/R
2000
MINIMUM ORDER QUANTITY
PACKAGING DESCRIPTION
VS-6EWH06FNTR-E3
2000
13" diameter reel
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95016
Part marking information
Packaging information (TR only)
SPICE model
www.vishay.com/doc?95176
www.vishay.com/doc?95033
www.vishay.com/doc?95187
www.vishay.com
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For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 93247
Revision: 31-Mar-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay High Power Products
D-PAK (TO-252AA)
DIMENSIONS in millimeters and inches
(5)
(3)
A
Pad layout
C
A
E
0.265
(6.74)
M
C A B
b3
0.010
MIN.
c2
A
H
E1
L3 (3)
Ø 1
4
4
Ø 2
0.245
(6.23)
B
MIN.
Seating
plane
D1
D (5)
0.488 (12.40)
0.409 (10.40)
L4
M
1
3
3
2
1
2
0.089
MIN.
(2.28)
(2) L5
Detail “C”
A
0.06
(1.524)
b
MIN.
c
b2
C A B
0.010
e
2 x
0.093 (2.38)
0.085 (2.18)
Detail “C”
(L1)
Rotated 90 °CW
Scale: 20:1
H
Lead tip
(7)
C
Gauge
plane
C
Seating
plane
C
L2
A1
Ø
L
MILLIMETERS
INCHES
MIN.
MILLIMETERS
INCHES
MIN. MAX.
0.090 BSC
SYMBOL
NOTES
SYMBOL
NOTES
MIN.
2.18
-
MAX.
2.39
0.13
0.89
1.14
5.46
0.61
0.89
6.22
-
MAX.
0.094
0.005
0.035
0.045
0.215
0.024
0.035
0.245
-
MIN.
MAX.
A
A1
b
0.086
-
e
H
2.29 BSC
9.40
1.40
10.41
1.78
0.370
0.055
0.410
0.070
0.64
0.76
4.95
0.46
0.46
5.97
5.21
6.35
4.32
0.025
0.030
0.195
0.018
0.018
0.235
0.205
0.250
0.170
L
b2
b3
c
L1
L2
L3
L4
L5
Ø
2.74 BSC
0.51 BSC
0.108 REF.
0.020 BSC
3
0.89
1.27
1.02
1.52
10°
0.035
0.050
0.040
0.060
10°
3
2
c2
D
-
-
0.045
0°
5
3
5
3
1.14
0°
D1
E
6.73
-
0.265
-
Ø1
Ø2
0°
15°
0°
15°
E1
25°
35°
25°
35°
Notes
(1)
(2)
(3)
(4)
(5)
Dimensioning and tolerancing as per ASME Y14.5M-1994
Lead dimension uncontrolled in L5
Dimension D1, E1, L3 and b3 establish a minimum mounting surface for thermal pad
Section C - C dimension apply to the flat section of the lead between 0.13 and 0.25 mm (0.005 and 0.10") from the lead tip
Dimension D, and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outermost extremes of the plastic body
(6)
(7)
(8)
Dimension b1 and c1 applied to base metal only
Datum A and B to be determined at datum plane H
Outline conforms to JEDEC outline TO-252AA
Document Number: 95016
Revision: 04-Nov-08
For technical questions concerning discrete products, contact: diodes-tech@vishay.com
For technical questions concerning module products, contact: ind-modules@vishay.com
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Disclaimer
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
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the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
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about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Revision: 12-Mar-12
Document Number: 91000
1
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