6F120 [VISHAY]
Standard Recovery Diodes (Stud Version), 6 A; 标准恢复二极管（梭哈版） ， 6的
| 型号： | 6F120 |
| 厂家： | 
VISHAY |
| 描述： | Standard Recovery Diodes (Stud Version), 6 A |
| 文件： | 总6页 (文件大小：129K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
6F(R) Series
Vishay High Power Products
Standard Recovery Diodes
(Stud Version), 6 A
FEATURES
• High surge current capability
RoHS
• Avalanche types available
• Stud cathode and stud anode version
• Wide current range
COMPLIANT
• Types up to 1200 V VRRM
• RoHS compliant
TYPICAL APPLICATIONS
• Converters
DO-203AA (DO-4)
• Power supplies
PRODUCT SUMMARY
• Machine tool controls
• Battery charges
IF(AV)
6 A
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
VALUES
6
UNITS
A
°C
A
IF(AV)
TC
160
IF(RMS)
9.5
50 Hz
60 Hz
50 Hz
60 Hz
Range
159
IFSM
A
167
134
I2t
A2s
141
VRRM
TJ
100 to 1200
- 65 to 175
V
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
V
RRM, MAXIMUM
VRSM, MAXIMUM
V
R(BR), MINIMUM
IRRM MAXIMUM
AT TJ = 175 °C
mA
TYPE
NUMBER
VOLTAGE
CODE
REPETITIVE PEAK
REVERSE VOLTAGE
V
NON-REPETITIVE PEAK
REVERSE VOLTAGE
V
AVALANCHE VOLTAGE
V (1)
10
20
100
200
150
275
-
-
40
400
500
500
750
950
1150
1350
6F(R)
12
60
600
725
80
800
950
100
120
1000
1200
1200
1400
Note
(1)
Avalanche version only available from VRRM 400 V to 1200 V
Document Number: 93519
Revision: 29-Sep-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
1
6F(R) Series
Standard Recovery Diodes
(Stud Version), 6 A
Vishay High Power Products
FORWARD CONDUCTION
PARAMETER
SYMBOL
TEST CONDITIONS
180° conduction, half sine wave
VALUES
6
UNITS
A
Maximum average forward current
at case temperature
IF(AV)
160
9.5
°C
Maximum RMS forward current
IF(RMS)
A
(1)
Maximum non-repetitive peak reverse power
PR
10 µs square pulse, TJ = TJ maximum
4
K/W
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
159
167
134
141
127
116
90
No voltage
reapplied
Maximum peak, one cycle forward,
non-repetitive surge current
IFSM
A
100 % VRRM
reapplied
Sinusoidal half wave,
initial TJ =
TJ maximum
No voltage
reapplied
Maximum I2t for fusing
I2t
A2s
100 % VRRM
reapplied
82
Maximum I2√t for fusing
I2√t
VF(TO)1
VF(TO)2
rf1
t = 0.1 to 10 ms, no voltage reapplied
1270
0.63
0.86
15.7
5.6
A2√s
Low level value of threshold voltage
High level value of threshold voltage
Low level value of forward slope resistance
High level value of forward slope resistance
Maximum forward voltage drop
(16.7 % x π x IF(AV) < I < π x IF(AV)), TJ = TJ maximum
(I > π x IF(AV)), TJ = TJ maximum
V
(16.7 % x π x IF(AV) < I < π x IF(AV)), TJ = TJ maximum
(I > π x IF(AV)), TJ = TJ maximum
mΩ
rf2
VFM
Ipk = 19 A, TJ = 25 °C, tp = 400 µs rectangular wave
1.10
V
Note
(1)
Available only for avalanche version, all other parameters the same as 6F
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum junction
temperature range
TJ
- 65 to 175
°C
Maximum storage
temperature range
TStg
RthJC
RthCS
- 65 to 200
2.5
Maximum thermal resistance,
junction to case
DC operation
K/W
Maximum thermal resistance,
case to heatsink
Mounting surface, smooth, flat and greased
0.5
Lubricated threads
(Not lubricated threads)
1.2
(1.5)
N · m
(lbf · in)
Mounting torque, 10 %
7
g
Approximate weight
Case style
0.25
oz.
See dimensions - link at the end of datasheet
DO-203AA (DO-4)
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For technical questions, contact: ind-modules@vishay.com
Document Number: 93519
Revision: 29-Sep-08
6F(R) Series
Standard Recovery Diodes
(Stud Version), 6 A
Vishay High Power Products
ΔRthJC CONDUCTION
CONDUCTION ANGLE
SINUSOIDAL CONDUCTION
RECTANGULAR CONDUCTION
TEST CONDITIONS
UNITS
0.34
0.44
0.57
0.85
1.37
0.29
0.48
0.63
0.88
1.39
180°
120°
90°
TJ = TJ maximum
K/W
60°
30°
Note
• The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
175
170
165
160
155
175
170
165
160
155
6F(R) Series
R (DC) = 2.5 K/W
6F(R) Series
(DC) = 2.5 K/W
R
thJC
thJC
ConductionPeriod
ConductionAngle
90°
90°
60°
4
60°
4
120°
180°
120°
30°
180°
30°
DC
0
1
2
3
5
6
7
0
2
6
8
10
Average Forward Current (A)
Average Forward Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
6
R
h
180°
120°
90°
60°
30°
1
t
5
S
K
/
A
W
=
2
3
0
K
5
4
3
2
1
0
0
K
/
W
/
W
-
D
e
l
t
a
4
0
R
K
/
W
5
0
K
/
W
RMS Limit
Conduction Angle
6F(R) Series
T = 175°C
J
0
1
2
3
4
5
60
25
50
75
100
Average Forward Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 3 - Forward Power Loss Characteristics
Document Number: 93519
Revision: 29-Sep-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
3
6F(R) Series
Standard Recovery Diodes
(Stud Version), 6 A
Vishay High Power Products
8
R
h
t
DC
S
A
=
7
6
5
4
3
2
1
0
180°
120°
90°
60°
30°
1
5
K
/
W
-
D
e
l
t
a
R
4
0
K/
W
RMS Limit
5
0
K/
Conduction Period
W
6F(R) Series
T = 175°C
J
0
2
4
6
8
10
25
50
75
100
Average Forward Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 4 - Forward Power Loss Characteristics
1000
100
10
150
140
130
120
110
100
90
At Any Rated Load Condition And With
Rated V
Applied Following Surge.
Initial T = 175°C
RRM
6F(R) Series
J
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
T = 25°C
J
80
70
T = 175°C
J
60
6F(R) Series
50
1
40
0
0.5
1
1.5
2
2.5
1
10
100
NumberOf Equal Amplitude Half Cycle Current Pulses (N)
Instantaneous Forward Voltage (V)
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 7 - Forward Voltage Drop Characteristics
160
10
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration.
Initial T = 175°C
Steady State Value
150
R
= 2.5 K/W
thJC
(DCOperation)
140
130
120
110
100
90
J
No Voltage Reapplied
Rated V
Reapplied
RRM
1
80
70
60
50
40
6F(R) Series
1
6F(R) Series
30
0.01
0.1
0.001
0.1
1
0.01
0.1
10
Square Wave Pulse Duration (s)
Fig. 8 - Thermal Impedance ZthJC Characteristics
Pulse Train Duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
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For technical questions, contact: ind-modules@vishay.com
Document Number: 93519
Revision: 29-Sep-08
6F(R) Series
Standard Recovery Diodes
(Stud Version), 6 A
Vishay High Power Products
ORDERING INFORMATION TABLE
Device code
6
F
R
120
M
1
2
3
4
5
-
-
-
Current rating: Code = IF(AV)
1
2
3
F = Standard device
None = Stud normal polarity (cathode to stud)
R = Stud reverse polarity (anode to stud)
Voltage code x 10 = VRRM (see Voltage Ratings table)
None = Stud base DO-203AA (DO-4) 10-32UNF-2A
M = Stud base DO-203AA (DO-4) M5 x 0.8
(not available for avalanche diode)
-
-
4
5
LINKS TO RELATED DOCUMENTS
Dimensions
http://www.vishay.com/doc?95311
Document Number: 93519
Revision: 29-Sep-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
5
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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