85HFLR10S05 [VISHAY]
Rectifier Diode, 1 Phase, 1 Element, 85A, 100V V(RRM), Silicon, DO-203AB, ROHS COMPLIANT, DO-5, 1 PIN;型号: | 85HFLR10S05 |
厂家: | VISHAY |
描述: | Rectifier Diode, 1 Phase, 1 Element, 85A, 100V V(RRM), Silicon, DO-203AB, ROHS COMPLIANT, DO-5, 1 PIN 快速恢复二极管 |
文件: | 总14页 (文件大小:1881K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
40HFL, 70HFL, 85HFL Series
Vishay High Power Products
Fast Recovery Diodes
(Stud Version), 40 A/70 A/85 A
FEATURES
• Short reverse recovery time
• Low stored charge
• Wide current range
• Excellent surge capabilities
• Stud cathode and stud anode versions
• Types up to 100 VRRM
• Compliant to RoHS directive 2002/95/EC
DO-203AB (DO-5)
TYPICAL APPLICATIONS
• DC power supplies
• Inverters
PRODUCT SUMMARY
• Converters
IF(AV)
40 A/70 A/85 A
• Choppers
• Ultrasonic systems
• Freewheeling diodes
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
40HFL
40
70HFL
70
85HFL
85
UNITS
A
IF(AV)
Maximum TC
85
85
85
°C
50 Hz
60 Hz
50 Hz
60 Hz
400
700
1100
1151
6050
5523
85 560
IFSM
A
420
730
800
2450
I2t
A2s
730
2240
I2√t
VRRM
trr
11 300
34 650
100 to 1000
I2√s
V
Range
Range
See Recovery Characteristics table
- 40 to 125
ns
°C
TJ
Document Number: 93150
Revision: 25-May-09
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
1
40HFL, 70HFL, 85HFL Series
Fast Recovery Diodes
(Stud Version), 40 A/70 A/85 A
Vishay High Power Products
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
VRRM, MAXIMUM
PEAK REPETITIVE
REVERSE VOLTAGE
TJ = - 40 °C TO 125 °C
V
V
RSM, MAXIMUM PEAK
NON-REPETITIVE
I
FM, MAXIMUM PEAK REVERSE
CURRENT AT RATED VRRM
mA
TYPE NUMBER (1)
REVERSE VOLTAGE
TJ = 25 °C TO 125 °C
V
TJ = 25 °C
TJ = 125 °C
100
200
400
600
800
1000
100
200
400
600
800
1000
100
200
400
600
800
1000
150
300
500
700
900
1100
150
300
500
700
900
1100
150
300
500
700
900
1100
40HFL10S02, 40HFL10S05, 40HFL10S10
40HFL20S02, 40HFL20S05, 40HFL20S10
40HFL40S02, 40HFL40S05, 40HFL40S10
40HFL60S02, 40HFL60S05, 40HFL60S10
40HFL80S05, 40HFL80S10
0.1
10
40HFL100S05, 40HFL100S10
70HFL10S02, 70HFL10S05, 70HFL10S10
70HFL20S02, 70HFL20S05, 70HFL20S10
70HFL40S02, 70HFL40S05, 70HFL40S10
70HFL60S02, 70HFL60S05, 70HFL60S10
70HFL80S05, 70HFL80S10
0.1
15
70HFL100S05, 70HFL100S10
85HFL10S02, 85HFL10S05, 85HFL10S10
85HFL20S02, 85HFL20S05, 85HFL20S10
85HFL40S02, 85HFL40S05, 85HFL40S10
85HFL60S02, 85HFL60S05, 85HFL60S10
85HFL80S05, 85HFL80S10
0.1
20
85HFL100S05, 85HFL100S10
Note
(1)
Types listed are cathode case, for anode case add “R” to code, i.e. 40HFLR20S02, 85HFLR100S05 etc.
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2
For technical questions, contact: ind-modules@vishay.com
Document Number: 93150
Revision: 25-May-09
40HFL, 70HFL, 85HFL Series
Fast Recovery Diodes
(Stud Version), 40 A/70 A/85 A
Vishay High Power Products
FORWARD CONDUCTION
PARAMETER
SYMBOL
TEST CONDITIONS
40HFL
70HFL 85HFL
UNITS
70
75
A
°C
A
40
85
Maximum average forward current
at maximum case temperature
IF(AV)
180° conduction, half sine wave
Maximum RMS forward current
IF(RMS)
IFRM
63
110
380
134
470
Maximum peak repetitive forward current
Sinusoidal half wave, 30° conduction
220
A
Sinusoidalhalfwave, 100
% VRRM reapplied,
initial TJ = TJ maximum
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
400
420
475
500
700
730
830
870
1100
1151
1308
1369
Maximum peak, one-cycle
non-repetitive forward current
IFSM
A
Sinusoidal half wave,
no voltage reapplied,
initial TJ = TJ maximum
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
800
730
2450
2240
3460
3160
6050
5523
8556
7810
100 % VRRM reapplied,
initial TJ = TJ maximum
Maximum I2t for fusing
I2t
A2s
1130
1030
No voltage reapplied,
initial TJ = TJ maximum
Maximum I2√t for fusing (1)
I2√t
VF(TO)
rF
t = 0.1 ms to 10 ms, no voltage reapplied 11 300
34 650 85 560
A2√s
V
Maximum value of threshold voltage
Maximum value of forward slope resistance
Maximum forward voltage drop
1.081
1.085
3.40
1.85
1.128
2.11
1.75
TJ = 125 °C
6.33
1.95
mΩ
V
VFM
TJ = 25 °C, IFM = π x IF(AV)
Note
(1)
I2t for time tx = I2√t • √tx
RECOVERY CHARACTERISTICS
40HFL...
70HFL...
85HFL...
PARAMETER
SYMBOL
TEST CONDITIONS
UNITS
S02 S05 S10 S02 S05 S10 S02 S05 S10
TJ = 25 °C, IF = 1 A to VR = 30 V,
- dIF/dt = 100 A/µs
70
180
500 1000 200
750 3100 90
350
60
150
500 1000 200
500 1600 70
290
50
120
270
Typical reverse
recovery time
trr
ns
TJ = 25 °C, - dIF/dt = 25 A/µs,
200
160
500 1000
340 1350
I
FM = π x rated IF(AV)
TJ = 25 °C, IF = 1 A to VR = 30 V,
- dIF/dt = 100 A/µs
Typical reverse
recovered charge
Qrr
nC
TJ = 25 °C, - dIF/dt = 25 A/µs,
IFM = π x rated IF(AV)
240 1300 6000 240 1300 6000 240 1300 6000
Document Number: 93150
Revision: 25-May-09
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
3
40HFL, 70HFL, 85HFL Series
Fast Recovery Diodes
(Stud Version), 40 A/70 A/85 A
Vishay High Power Products
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
40HFL 70HFL 85HFL UNITS
Junction operating temperature range
Storage temperature range
TJ
- 40 to 125
°C
- 40 to 150
TStg
Maximum thermal resistance,
junction to case
RthJC
DC operation
0.60
0.36
0.25
0.30
K/W
Maximum thermal resistance,
case to heatsink
Mounting surface, smooth,
flat and greased
RthCS
Not lubricated thread, tighting on nut (1)
Lubricated thread, tighting on nut (1)
3.4 (30)
2.3 (20)
4.2 (37)
3.2 (28)
25
Maximum allowable mounting torque
(+ 0 %, - 10 %)
N · m
(lbf · in)
Not lubricated thread, tighting on hexagon (2)
Lubricated thread, tighting on hexagon (2)
Approximate weight
Case style
0.88
JEDEC
DO-203AB (DO-5)
Notes
(1)
(2)
Recommended for pass-through holes
Recommended for holed threaded heatsinks
Fig. 1 - Reverse Recovery Time Test Waveform
Fig. 2 - Current Rating Nomogram (Sinusoidal Waveforms), 40HFL Series
For technical questions, contact: ind-modules@vishay.com
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4
Document Number: 93150
Revision: 25-May-09
40HFL, 70HFL, 85HFL Series
Fast Recovery Diodes
(Stud Version), 40 A/70 A/85 A
Vishay High Power Products
Fig. 3 - Current Rating Nomogram (Rectangular Waveforms), 40HFL Series
Fig. 4 - Current Rating Nomogram (Sinusoidal Waveforms), 70HFL Series
70HFL
Fig. 5 - Current Rating Nomogram (Rectangular Waveforms), 70HFL Series
For technical questions, contact: ind-modules@vishay.com
Document Number: 93150
Revision: 25-May-09
www.vishay.com
5
40HFL, 70HFL, 85HFL Series
Fast Recovery Diodes
(Stud Version), 40 A/70 A/85 A
Vishay High Power Products
85HFL
Fig. 6 - Current Rating Nomogram (Sinusoidal Waveforms), 85HFL Series
85HFL
Fig. 7 - Current Rating Nomogram (Rectangular Waveforms), 85HFL Series
Fig. 8 - Maximum High Level Forward Power Loss vs.
Average Forward Current, 40HFL Series
Fig. 9 - Maximum High Level Forward Power Loss vs.
Average Forward Current, 70HFL Series
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6
For technical questions, contact: ind-modules@vishay.com
Document Number: 93150
Revision: 25-May-09
40HFL, 70HFL, 85HFL Series
Fast Recovery Diodes
(Stud Version), 40 A/70 A/85 A
Vishay High Power Products
Fig. 10 - Maximum High Level Forward Power Loss vs.
Average Forward Current, 85HFL Series
Fig. 13 - Maximum Forward Voltage vs. Forward Current,
85HFL Series
Fig. 11 - Maximum Forward Voltage vs. Forward Current,
40HFL Series
Fig. 14 - Average Forward Current vs. Maximum Allowable
Case Temperature, 40HFL Series
Fig. 12 - Maximum Forward Voltage vs. Forward Current,
70HFL Series
Fig. 15 - Average Forward Current vs. Maximum Allowable
Case Temperature, 70HFL Series
Document Number: 93150
Revision: 25-May-09
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
7
40HFL, 70HFL, 85HFL Series
Fast Recovery Diodes
(Stud Version), 40 A/70 A/85 A
Vishay High Power Products
Fig. 16 - Average Forward Current vs. Maximum Allowable
Case Temperature, 85HFL Series
Fig. 17 - Maximum Non-Repetitive Surge Current
vs. Number of Current Pulses, All Series
Fig. 18 - Maximum Transient Thermal Impedance, Junction to Case vs. Pulse Duration, All Series
Fig. 19 - Typical Reverse Recovery Time vs.
Rate of Fall of Forward Current, 40HFL...S02 Series
Fig. 20 - Typical Recovered Charge vs.
Rate of Fall of Forward Current, 40HFL...S02 Series
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For technical questions, contact: ind-modules@vishay.com
Document Number: 93150
Revision: 25-May-09
40HFL, 70HFL, 85HFL Series
Fast Recovery Diodes
(Stud Version), 40 A/70 A/85 A
Vishay High Power Products
Fig. 21 - Typical Reverse Recovery Time vs.
Rate of Fall of Forward Current, 40HFL...S05 Series
Fig. 24 - Typical Recovered Charge vs.
Rate of Fall of Forward Current, 40HFL...S10 Series
Fig. 22 - Typical Recovered Charge vs.
Rate of Fall of Forward Current, 40HFL...S05 Series
Fig. 25 - Typical Reverse Recovery Time vs.
Rate of Fall of Forward Current, 70HFL...S02 Series
Fig. 23 - Typical Reverse Recovery Time vs.
Rate of Fall of Forward Current, 40HFL...S10 Series
Fig. 26 - Typical Recovered Charge vs.
Rate of Fall of Forward Current, 70HFL...S02 Series
Document Number: 93150
Revision: 25-May-09
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
9
40HFL, 70HFL, 85HFL Series
Fast Recovery Diodes
(Stud Version), 40 A/70 A/85 A
Vishay High Power Products
Fig. 27 - Typical Reverse Recovery Time vs.
Rate of Fall of Forward Current, 70HFL...S05 Series
Fig. 30 - Typical Recovered Charge vs.
Rate of Fall of Forward Current, 70HFL...S10 Series
Fig. 28 - Typical Recovered Charge vs.
Rate of Fall of Forward Current, 70HFL...S05 Series
Fig. 31 - Typical Reverse Recovery Time vs.
Rate of Fall of Forward Current, 85HFL...S02 Series
Fig. 29 - Typical Reverse Recovery Time vs.
Rate of Fall of Forward Current, 70HFL...S10 Series
Fig. 32 - Typical Recovered Charge vs.
Rate of Fall of Forward Current, 85HFL...S02 Series
www.vishay.com
10
For technical questions, contact: ind-modules@vishay.com
Document Number: 93150
Revision: 25-May-09
40HFL, 70HFL, 85HFL Series
Fast Recovery Diodes
(Stud Version), 40 A/70 A/85 A
Vishay High Power Products
Fig. 33 - Typical Reverse Recovery Time vs.
Rate of Fall of Forward Current, 85HFL...S05 Series
Fig. 35 - Typical Reverse Recovery Time vs.
Rate of Fall of Forward Current, 85HFL...S10 Series
Fig. 34 - Typical Recovered Charge vs.
Rate of Fall of Forward Current, 85HFL...S05 Series
Fig. 36 - Typical Recovered Charge vs.
Rate of Fall of Forward Current, 85HFL...S10 Series
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95312
Document Number: 93150
Revision: 25-May-09
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
11
Outline Dimensions
Vishay Semiconductors
DO-203AB (DO-5) for 40HFL, 70HFL and 85HFL
DIMENSIONS FOR 40HFL/70HFL in millimeters (inches)
Ø 14.6 (0.57)
6.1/7
(0.24/0.27)
4 (0.16)
4 (0.16) MIN.
25.4 (1) MAX.
10.8 (0.42)
11.4 (0.45)
11.1 0.4
(0.44 0.02)
1/4" 28UNF-2A
for metric devices: M6 x 1
1.20 (0.04)
17.40 (0.68)
Document Number: 95312
Revision: 29-Sep-08
For technical questions, contact: indmodules@vishay.com
www.vishay.com
1
Outline Dimensions
Vishay Semiconductors
DO-203AB (DO-5) for
40HFL, 70HFL and 85HFL
DIMENSIONS FOR 85HFL in millimeters (inches)
Ø 15 (0.59)
6.1/7
(0.24/0.27)
4 (0.16)
4 (0.16) MIN.
25.4 (1) MAX.
10.8 (0.42)
11.4 (0.45)
11.1 0.4
(0.44 0.02)
1/4" 28UNF-2A
for metric devices: M6 x 1
1.20 (0.04)
17.35 (0.68)
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2
For technical questions, contact: indmodules@vishay.com
Document Number: 95312
Revision: 29-Sep-08
Legal Disclaimer Notice
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Vishay
Disclaimer
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
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product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
Revision: 02-Oct-12
Document Number: 91000
1
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