AS1FM-M3/I [VISHAY]
Standard Avalanche Surface-Mount Rectifiers;型号: | AS1FM-M3/I |
厂家: | VISHAY |
描述: | Standard Avalanche Surface-Mount Rectifiers |
文件: | 总5页 (文件大小:114K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
AS1FD, AS1FG, AS1FJ, AS1FK, AS1FM
www.vishay.com
Vishay General Semiconductor
Standard Avalanche Surface-Mount Rectifiers
FEATURES
®
Available
eSMP Series
• Low profile package
• Glass passivated pellet chip junction
• Ideal for automated placement
• Low forward voltage drop, low reverse current
• Meets MSL level 1, per J-STD-020;
LF maximum peak of 260 °C
Top view
Bottom view
• Wave and reflow solderable
SMF (DO-219AB)
• AEC-Q101 qualified
- Automotive ordering code: base P/NHM3
Cathode
Anode
• Compatible to SOD-123W package case outline
LINKS TO ADDITIONAL RESOURCES
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
3
D
3D Models
TYPICAL APPLICATIONS
For use in general purpose rectification of power supplies,
inverters, converters, and freewheeling diodes for
consumer, automotive, and telecommunication.
PRIMARY CHARACTERISTICS
IF(AV)
1.5 A
VRRM
200 V, 400 V, 600 V, 800 V, 1000 V
MECHANICAL DATA
IFSM
30 A
0.2 μA
Case: SMF (DO-219AB)
Molding compound meets UL 94 V-0 flammability rating
IR
VF at IF = 1 A
EAS
0.84 V
Base P/N-M3
commercial grade
-
halogen-free, RoHS-compliant, and
20 mJ
Base P/NHM3
automotive grade
- halogen-free, RoHS-compliant, and
TJ max.
Package
175 °C
SMF (DO-219AB)
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
Circuit configuration
Single
M3 and HM3 suffix meets JESD 201 class 2 whisker test
Polarity: color band denotes cathode end
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
AS1FD
AS1FG
ASG
AS1FJ
ASJ
600
AS1FK
ASK
AS1FM
ASM
UNIT
Device marking code
ASD
Max. repetitive peak reverse voltage
Max. DC forward current (see fig. 1)
VRRM
200
400
800
1000
V
A
(1)
IF
1.5
Peak forward surge current 10 ms single half
sine-wave superimposed on rated load
IFSM
30
A
Non-repetitive avalanche energy
EAS
20
mJ
°C
at IAS = 1.0 A, TA = 25 °C
Operating junction and storage temperature range
TJ, TSTG
-55 to +175
Note
(1)
Free air, mounted on recommended PCB, 2 oz. pad area
Revision: 30-Sep-2020
Document Number: 87021
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
AS1FD, AS1FG, AS1FJ, AS1FK, AS1FM
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TJ = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
0.95
0.84
0.99
0.89
0.14
25
MAX.
UNIT
TJ = 25 °C
-
-
IF = 1.0 A
IF = 1.5 A
Rated VR
TJ = 125 °C
TJ = 25 °C
(1)
Instantaneous forward voltage
VF
V
1.15
1.0
5
TJ = 125 °C
TJ = 25 °C
(2)
Reverse current
IR
μA
TJ = 125 °C
100
-
Typical reverse recovery time
Typical junction capacitance
IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A
4.0 V, 1 MHz
trr
1.3
μs
CJ
8.8
-
pF
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
Pulse test: Pulse width 40 ms
(2)
THERMAL CHARACTERISTICS (TA = 25 °c unless otherwise noted)
PARAMETER
SYMBOL
AS1FD
AS1FG
AS1FJ
AS1FK
AS1FM
UNIT
(1)(2)
RJA
130
Typical thermal resistance
°C/W
(1)
RJM
20
Notes
(1)
Free air, mounted on recommended PCB, 2 oz. pad area; thermal resistance RJA - junction to ambient; RJM - junction to mount
The heat generated must be less than the thermal conductivity from junction-to-ambient: dPD/dTJ < 1/RJA
(2)
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
3000
DELIVERY MODE
AS1FM-M3/H
0.015
H
I
7" diameter plastic tape and reel
13" diameter plastic tape and reel
7" diameter plastic tape and reel
13" diameter plastic tape and reel
AS1FM-M3/I
0.015
10 000
AS1FMHM3/H (1)
AS1FMHM3/I (1)
0.015
H
I
3000
0.015
10 000
Note
(1)
AEC-Q101 qualified
Revision: 30-Sep-2020
Document Number: 87021
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
AS1FD, AS1FG, AS1FJ, AS1FK, AS1FM
www.vishay.com
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES (TA = 25 C unless otherwise noted)
Axis Title
Axis Title
1.6
1.4
1.2
1
10000
1000
100
1000
100
10
10000
1000
100
TJ = 175 °C
TJ = 125 °C
RthJM = 20 °C/W
TJ = 100 °C
0.8
0.6
0.4
0.2
0
1
TJ = 25 °C
TJ = -40 °C
0.1
RthJA = 130 °C/W
0.01
0.001
TM measured at cathode
terminal mount typical values
10
10
0
25
50
75
100 125 150 175
10 20 30 40 50 60 70 80 90 100
Percent of Rated Peak Reverse Voltage (%)
Mount Temperature (°C)
Fig. 1 - Max. Forward Current Derating Curve
Fig. 4 - Typical Reverse Characteristics
Axis Title
Axis Title
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
10000
100
10
1
10000
1000
100
TJ = 25 °C
f = 1.0 MHz
V
sig = 50 mVp-p
D = 0.3
D = 0.2
1000
100
10
D = 1.0
D = 0.1
D = 0.8
D = 0.5
T
D = tp/T
tp
10
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
Average Forward Current (A)
0.1
1
10
100
Reverse Voltage (V)
Fig. 2 - Forward Power Loss Characteristics
Fig. 5 - Typical Junction Capacitance
Axis Title
Axis Title
10
10000
1000
100
1000
100
10
10000
1000
100
Junction to ambient
TJ = 175 °C
TJ = 125 °C
1
TJ = 100 °C
TJ = 25 °C
TJ = -40 ƱC
0.1
10
1
0.01
10
1000
0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5
Instantaneous Forward Voltage (V)
0.1
1
10
100
t - Pulse Duration (s)
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 6 - Typical Transient Thermal Impedance
Revision: 30-Sep-2020
Document Number: 87021
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
AS1FD, AS1FG, AS1FJ, AS1FK, AS1FM
www.vishay.com
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in millimeters (inches)
0.85 (0.033)
0.35 (0.014)
Detail Z
enlarged
1.08 (0.043)
0.88 (0.035)
2.9 (0.114)
2.7 (0.106)
3.9 (0.154)
3.5 (0.138)
Foot print recommendation:
1.3 (0.051)
1.3 (0.051)
Created - Date: 15. February 2005
Rev. 3 - Date: 13. March 2007
Document no.: S8-V-3915.01-001 (4)
2.9 (0.114)
17247
Revision: 30-Sep-2020
Document Number: 87021
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
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© 2021 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 01-Jan-2021
Document Number: 91000
1
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