AS4PKHM3/87A [VISHAY]
DIODE 2.4 A, 800 V, SILICON, RECTIFIER DIODE, TO-277A, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, SMPC, 3 PIN, Rectifier Diode;
| 型号： | AS4PKHM3/87A |
| 厂家： | 
VISHAY |
| 描述： | DIODE 2.4 A, 800 V, SILICON, RECTIFIER DIODE, TO-277A, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, SMPC, 3 PIN, Rectifier Diode 局域网 PC 光电二极管 |
| 文件： | 总5页 (文件大小：95K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AS4PD, AS4PG, AS4PJ, AS4PK, AS4PM
www.vishay.com
Vishay General Semiconductor
High Current Density Standard Avalanche
Surface Mount Rectifiers
FEATURES
eSMP® Series
Available
• Very low profile - typical height of 1.1 mm
• Ideal for automated placement
• Glass passivated pellet chip junction
• Controlled avalanche characteristics
• Low leakage current
K
• High forward surge capability
1
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
2
TO-277A (SMPC)
• AEC-Q101 qualified available
- Automotive ordering code: base P/NHM3
Anode 1
Anode 2
K
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
Cathode
PRIMARY CHARACTERISTICS
MECHANICAL DATA
IF(AV)
4.0 A
Case: TO-277A (SMPC)
200 V, 400 V, 600 V, 800 V,
1000 V
VRRM
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3
commercial grade
Base P/NHM3
AEC-Q101 qualified
-
halogen-free, RoHS-compliant, and
IFSM
EAS
100 A
20 mJ
0.92 V
- halogen-free, RoHS-compliant and
VF at IF = 4 A
Base P/NHM3_X - halogen-free, RoHS-compliant and
AEC-Q101 qualified
(“_X” denotes revision code e.g. A, B,.....)
TJ max.
Package
175 °C
TO-277A (SMPC)
Single die
Diode variations
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix
meets JESD 201 class 2 whisker test
TYPICAL APPLICATIONS
For use in general purpose rectification of power supplies,
inverters, converters and freewheeling diodes for consumer,
automotive and telecommunication.
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL AS4PD AS4PG
AS4PJ
AS4J
600
AS4PK AS4PM UNIT
Device marking code
AS4D
200
AS4G
400
AS4K
800
AS4M
1000
Max. repetitive peak reverse voltage
VRRM
V
A
(1)
IF
4.0
Max. DC forward current (fig. 1)
(2)
IF
2.4
Peak forward surge current 10 ms single half
sine-wave superimposed on rated load
IFSM
100
A
I
AS = 2.5 A max.
20
30
Non-repetitive avalanche energy
EAS
mJ
°C
at TJ = 25 °C
IAS = 1.0 A typical
Operating junction and storage temperature range
TJ, TSTG
-55 to +175
Notes
(1)
Mounted on 20 mm x 20 mm pad areas, 1 oz. FR4 PCB
Free air, mounted on recommended copper pad area
(2)
Revision: 19-Feb-16
Document Number: 88770
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
AS4PD, AS4PG, AS4PJ, AS4PK, AS4PM
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
0.962
1.044
0.822
0.922
0.35
MAX.
-
UNIT
IF = 2.0 A
TA = 25 °C
IF = 4.0 A
1.10
-
(1)
Instantaneous forward voltage
VF
V
IF = 2.0 A
TA = 125 °C
IF = 4.0 A
0.98
10
TA = 25 °C
rated VR
(2)
Reverse current
IR
μA
TA = 125 °C
75
150
IF = 0.5 A, IR = 1.0 A,
Typical reverse recovery time
trr
1.8
60
-
-
μs
Irr = 0.25 A
Typical junction capacitance per diode
4.0 V, 1 MHz
CJ
pF
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width 40 ms
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
AS4PD
AS4PG
AS4PJ
AS4PK
AS4PM
UNIT
(1)
RJA
80
5
Typical thermal resistance
°C/W
(2)
RJM
Notes
(1) Free air, mounted on recommended PCB 1 oz. pad area; thermal resistance RJA - junction to ambient
(2) Units mounted on PCB with 20 mm x 20 mm copper pad areas, 1 oz. FR4 PCB; RJM - junction to mount
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
AS4PJ-M3/86A
0.10
0.10
0.10
0.10
0.10
0.10
86A
87A
86A
87A
H
1500
6500
1500
6500
1500
6500
7" diameter plastic tape and reel
13" diameter plastic tape and reel
7" diameter plastic tape and reel
13" diameter plastic tape and reel
7" diameter plastic tape and reel
13" diameter plastic tape and reel
AS4PJ-M3/87A
AS4PJHM3/86A (1)
AS4PJHM3/87A (1)
AS4PJHM3_A/H (1)
AS4PJHM3_A/I (1)
I
Note
(1) AEC-Q101 qualified
Revision: 19-Feb-16
Document Number: 88770
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
AS4PD, AS4PG, AS4PJ, AS4PK, AS4PM
www.vishay.com
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
1000
100
10
TM = 155 °C
TA = 175 °C
TA = 125 °C
TA = 25 °C
TA = 75 °C
1
0.1
0.01
TA = 25 °C
TM Measured
at the Cathode Band Terminal
0
25
50
75
100
125
150
175
10
20
30
40
50
60
70
80
90 100
Percent of Rated Peak Reverse Voltage (%)
Mount Temperature (°C)
Fig. 1 - Max. Forward Current Derating Curve
Fig. 4 - Typical Reverse Leakage Characteristics
5.0
1000
D = 0.8
D = 0.5
D = 0.3
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
D = 0.2
100
10
1
D = 0.1
D = 1.0
T
D = tp/T
tp
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
Average Forward Current (A)
0.1
1
10
100
Reverse Voltage (V)
Fig. 2 - Forward Power Loss Characteristics
Fig. 5 - Typical Junction Capacitance
100
10
1
100
Junction-to-Ambient
TA = 175 °C
TA = 125 °C
10
1
TA = 75 °C
TA = 25 °C
0.1
0.1
0.01
0.1
1
10
100
0.3
0.5
0.7
0.9
1.1
1.3
1.5
t - Pulse Duration (s)
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 6 - Typical Transient Thermal Impedance
Revision: 19-Feb-16
Document Number: 88770
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
AS4PD, AS4PG, AS4PJ, AS4PK, AS4PM
www.vishay.com
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
TO-277A (SMPC)
0.187 (4.75)
0.175 (4.45)
0.016 (0.40)
0.006 (0.15)
K
0.262 (6.65)
0.250 (6.35)
0.242 (6.15)
0.238 (6.05)
2
1
0.047 (1.20)
0.039 (1.00)
0.171 (4.35)
0.167 (4.25)
0.146 (3.70)
0.134 (3.40)
Mounting Pad Layout
0.087 (2.20)
0.075 (1.90)
0.189 (4.80)
MIN.
0.189 (4.80)
0.173 (4.40)
0.186 (4.72)
MIN.
0.268
(6.80)
0.155 (3.94)
NOM.
0.030 (0.75) NOM.
0.049 (1.24)
0.037 (0.94)
0.050 (1.27)
MIN.
0.084 (2.13) NOM.
0.053 (1.35)
0.041 (1.05)
0.041
(1.04)
0.055 (1.40)
MIN.
®
Conform to JEDEC TO-277A
Revision: 19-Feb-16
Document Number: 88770
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
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© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 08-Feb-17
Document Number: 91000
1
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