AZ23B30-E9 [VISHAY]
DIODE 30 V, 0.3 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, PLASTIC PACKAGE-3, Voltage Regulator Diode;
| 型号： | AZ23B30-E9 |
| 厂家： | 
VISHAY |
| 描述： | DIODE 30 V, 0.3 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, PLASTIC PACKAGE-3, Voltage Regulator Diode |
| 文件： | 总9页 (文件大小：358K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AZ23 Series
Vishay Semiconductors
VISHAY
Dual Common-Anode Zener Diodes
Features
• These diodes are also available in other case
styles and configurations including: the dual diode
common cathode configuration with type designa-
tion DZ23, the single diode SOT-23 case with the
type designation BZX84C, and the single diode
SOD-123 case with the type designation BZT52C.
• Dual Silicon Planar Zener Diodes, Common
Mechanical Data
Case: SOT-23 Plastic Package
Anode
• The Zener voltages are graded according to the
international E 24 standard. Standard Zener volt-
age tolerance is 5 %. Replace "C" with " B " for
2 % tolerance. Other voltage tolerances and other
Zener voltages are available upon request.
Weight: Approx. 8 mg
Packaging Codes/Options:
E8 / 10k per 13 " reel (8 mm tape), 30 k/box
E9 / 3k per 7 " reel (8 mm tape), 30 k/box
• The parameters are valid for both diodes in one
case. VZ and rzj of the two diodes in one case is
5 %
Absolute Maximum Ratings
T
= 25 °C, unless otherwise specified
amb
Parameter
Test condition
Symbol
Value
Unit
mW
1)
Power dissipation
P
tot
300
1)
Device on fiberglass substrate, see layout
Thermal Characteristics
T
= 25 °C, unless otherwise specified
amb
Parameter
Test condition
Symbol
Value
Unit
1)
Thermal resistance junction to ambient air
Junction temperature
R
°C/W
°C
JA
420
T
150
j
Storage temperature range
T
- 65 to + 150
°C
S
1)
Device on fiberglass substrate, see layout
Document Number 85759
Rev. 2, 15-Jul-03
www.vishay.com
1
AZ23 Series
Vishay Semiconductors
VISHAY
Electrical Characteristics
1)
Partnumber
Marking
Dynamic Resistance
Test
Current
Temperature Coefficient
of Zener Voltage
Reverse
Voltage
Zener Voltage Range
Code
V
@ I
r
@
r
@
I
@ I
V @
R
Z
ZT
zj
zj
ZT
VZ
ZT
I
= 5 mA,
I
= 1 mA,
I
R
= 100 nA
V
ZT
ZT
f = 1 kHz
f = 1 kHz
-4
V
mA
10 /°C
min
2.5
2.8
3.1
3.4
3.7
4
max
2.9
3.2
3.5
3.8
4.1
4.6
5
min
-9
-9
-8
-8
-7
-6
-5
-3
-2
-1
2
max
-4
-3
-3
-3
-3
-1
2
AZ23C2V7
AZ23C3
D1
D2
75 (<83)
80 (<95)
80 (<95)
80 (<95)
80 (<95)
80 (<95)
70 (<78)
30 (<60)
10 (<40)
4.8 (<10)
4.5 (<8)
4 (<7)
<500
<500
<500
<500
<500
<500
<500
<480
<400
<200
<150
<50
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
-
-
AZ23C3V3
AZ23C3V6
AZ23C3V9
AZ23C4V3
AZ23C4V7
AZ23C5V1
AZ23C5V6
AZ23C6V2
AZ23C6V8
AZ23C7V5
AZ23C8V2
AZ23C9V1
AZ23C10
AZ23C11
AZ23C12
AZ23C13
AZ23C15
AZ23C16
AZ23C18
AZ23C20
AZ23C22
AZ23C24
AZ23C27
AZ23C30
AZ23C33
AZ23C36
AZ23C39
AZ23C43
AZ23C47
AZ23C51
D3
-
D4
-
D5
-
D6
-
D7
4.4
4.8
5.2
5.8
6.4
7
-
D8
5.4
6
4
>0.8
>1
D9
6
D10
D11
D12
D13
D14
D15
D16
D17
D18
D19
D20
D21
D22
D23
D24
D25
D26
D27
D28
D29
D30
D31
D32
6.6
7.2
7.9
8.7
9.6
10.6
11.6
12.7
14.1
15.6
17.1
19.1
21.2
23.3
25.6
28.9
32
7
>2
7
>3
-3
4
7
>5
7.7
8.5
9.4
10.4
11.4
12.4
13.8
15.3
16.8
18.8
20.8
22.8
25.1
28
4.5 (<7)
4.8 (<10)
5.2 (<15)
6 (<20)
<50
7
>6
<50
5
8
>7
<70
5
8
>7.5
>8.5
>9
<70
5
9
7 (<20)
<90
6
9
9 (<25)
<110
<110
<170
<170
<220
<220
<220
<250
<250
<250
<250
<300
<700
<750
<750
7
9
>10
>11
>12
>14
>15
>17
>18
>20
>22.5
>25
>27
>29
>32
>35
>38
11 (<30)
13 (<40)
18 (<50)
20 (<50)
25 (<55)
28 (<80)
30 (<80)
35 (<80)
40 (<80)
40 (<90)
50 (<90)
60 (<100)
70 (<100)
70 (<100)
7
9
8
9.5
9.5
10
10
10
10
10
10
10
12
12
12
12
8
8
8
8
8
8
31
35
8
34
38
8
37
41
10
10
10
10
40
46
44
50
48
54
1)
Tested with pulses tp = 5 ms
www.vishay.com
2
Document Number 85759
Rev. 2, 15-Jul-03
AZ23 Series
Vishay Semiconductors
VISHAY
Electrical Characteristics
1)
Partnumber
Marking
Dynamic Resistance
Test
Current
Temperature Coefficient
of Zener Voltage
Reverse
Voltage
Zener Voltage Range
Code
V
@ I
r
@
r
@
I
@ I
V @
R
Z
ZT
zj
zj
ZT
VZ
ZT
I
= 5 mA,
I
= 1 mA,
I
R
= 100 nA
V
ZT
ZT
f = 1 kHz
f = 1 kHz
-4
V
mA
10 /°C
min
2.65
2.94
3.23
3.53
3.82
4.21
4.61
5
max
2.75
3.06
3.37
3.67
3.98
4.39
4.79
5.2
min
-9
-9
-8
-8
-7
-6
-5
-3
-2
-1
2
max
-4
-3
-3
-3
-3
-1
2
AZ23B2V7
AZ23B3
D1
D2
75 (<83)
80 (<95)
80 (<95)
80 (<95)
80 (<95)
80 (<95)
70 (<78)
30 (<60)
10 (<40)
4.8 (<10)
4.5 (<8)
4 (<7)
<500
<500
<500
<500
<500
<500
<500
<480
<400
<200
<150
<50
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
-
-
AZ23B3V3
AZ23B3V6
AZ23B3V9
AZ23B4V3
AZ23B4V7
AZ23B5V1
AZ23B5V6
AZ23B6V2
AZ23B6V8
AZ23B7V5
AZ23B8V2
AZ23B9V1
AZ23B10
AZ23B11
AZ23B12
AZ23B13
AZ23B15
AZ23B16
AZ23B18
AZ23B20
AZ23B22
AZ23B24
AZ23B27
AZ23B30
AZ23B33
AZ23B36
AZ23B39
AZ23B43
AZ23B47
AZ23B51
D3
-
D4
-
D5
-
D6
-
D7
-
D8
4
>0.8
>1
D9
5.49
6.08
6.66
7.35
8.04
8.92
9.8
5.71
6.32
6.94
7.65
8.36
9.28
10.2
11.2
12.2
13.3
15.3
16.3
18.4
20.4
22.4
24.5
27.5
30.6
33.7
36.7
39.8
43.9
47.9
52
6
D10
D11
D12
D13
D14
D15
D16
D17
D18
D19
D20
D21
D22
D23
D24
D25
D26
D27
D28
D29
D30
D31
D32
7
>2
7
>3
-3
4
7
>5
4.5 (<7)
4.8 (<10)
5.2 (<15)
6 (<20)
<50
7
>6
<50
5
8
>7
<70
5
8
>7.5
>8.5
>9
10.8
11.8
12.7
14.7
15.7
17.6
19.6
21.6
23.5
26.5
29.4
32.3
35.3
38.2
42.1
46.1
50
<70
5
9
7 (<20)
<90
6
9
9 (<25)
<110
<110
<170
<170
<220
<220
<220
<250
<250
<250
<250
<300
<700
<750
<750
7
9
>10
>11
>12
>14
>15
>17
>18
>20
>22.5
>25
>27
>29
>32
>35
>38
11 (<30)
13 (<40)
18 (<50)
20 (<50)
25 (<55)
28 (<80)
30 (<80)
35 (<80)
40 (<80)
40 (<90)
50 (<90)
60 (<100)
70 (<100)
70 (<100)
7
9
8
0.5
0.5
10
10
10
10
10
10
10
12
12
12
12
8
8
8
8
8
8
8
8
10
10
10
10
1)
Tested with pulses tp = 5 ms
Document Number 85759
Rev. 2, 15-Jul-03
www.vishay.com
3
AZ23 Series
Vishay Semiconductors
VISHAY
Typical Characteristics (Tamb = 25 C unless otherwise specified)
°C/W
18114
18121
Figure 1. Forward characteristics
Figure 4. Thermal differential resistance versus Zener voltage
18115
18122
Figure 2. Admissible Power Dissipation vs. Ambient Temperature
Figure 5. Dynamic resistance versus Zener voltage
°C
18120
18123
Figure 3. Dynamic Resistance vs. Zener Current
Figure 6. Temperature dependence of Zener voltage versus Zener
voltage
www.vishay.com
4
Document Number 85759
Rev. 2, 15-Jul-03
AZ23 Series
Vishay Semiconductors
VISHAY
18124
18127
Figure 7. Change of Zener voltage versus junction temperature
Figure 10. Change of Zener voltage from turn-on up to the point of
thermal equilibrium versus Zener voltage
°C
18125
18128
Figure 8. Temperature dependence of Zener voltage versus Zener
voltage
Figure 11. Change of Zener voltage from turn-on up to the point of
thermal equilibrium versus Zener voltage
18126
Figure 9. Change of Zener voltage versus junction temperature
Document Number 85759
Rev. 2, 15-Jul-03
www.vishay.com
5
AZ23 Series
Vishay Semiconductors
VISHAY
18111
Figure 12. Breakdown Characteristics
18112
Figure 13. Breakdown Characteristics
www.vishay.com
6
Document Number 85759
Rev. 2, 15-Jul-03
AZ23 Series
Vishay Semiconductors
VISHAY
18113
Figure 14. Breakdown Characteristics
Layout for R
test
JA
Thickness: Fiberglass 0.059 in. (1.5 mm)
Copper leads 0.012 in. (0.3 mm)
0.30 (7.5)
0.12 (3)
.04 (1)
.08 (2)
.04 (1)
.08 (2)
0.59 (15)
0.03 (0.8)
0.47 (12)
0.2 (5)
0.06 (1.5)
0.20 (5.1)
Dimensions in inches (millimeters)
17451
Document Number 85759
Rev. 2, 15-Jul-03
www.vishay.com
7
AZ23 Series
Vishay Semiconductors
VISHAY
Package Dimensions in Inches (mm)
.12 2 (3.1)
.110 (2.8)
.016 ( 0.4)
Top View
3
1
2
.037( 0.95)
.037( 0.95)
.102 ( 2.6)
.094 ( 2.4)
.016 ( 0.4)
.016 ( 0.4)
17418
Mounting Pad Layout
0.031 (0.8)
0.035 (0.9)
0.079 (2.0)
0.037 (0.95)
0.037 (0.95)
17417
www.vishay.com
8
Document Number 85759
Rev. 2, 15-Jul-03
AZ23 Series
Vishay Semiconductors
VISHAY
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the
use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Document Number 85759
Rev. 2, 15-Jul-03
www.vishay.com
9
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