B40C800DM/45-E3 [VISHAY]
DIODE 0.9 A, 65 V, SILICON, BRIDGE RECTIFIER DIODE, PLASTIC, CASE DFM, 4 PIN, Bridge Rectifier Diode;
| 型号： | B40C800DM/45-E3 |
| 厂家： | 
VISHAY |
| 描述： | DIODE 0.9 A, 65 V, SILICON, BRIDGE RECTIFIER DIODE, PLASTIC, CASE DFM, 4 PIN, Bridge Rectifier Diode |
| 文件： | 总2页 (文件大小：23K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
B40C800DM thru B380C800DM
Vishay Semiconductors
formerly General Semiconductor
Glass Passivated Single-Phase Bridge Rectifier
Rectifier Reverse Voltage 65 and 600 V
Rectifier Forward Current 0.9 A
Case Style DFM
Features
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
0.315 (8.00)
0.255 (6.5)
0.245 (6.2) 0.285 (7.24)
• Glass passivated chip junction
• Surge overload rating of 45 Amperes peak
• Ideal for printed circuit boards
• High temperature soldering guaranteed:
260°C/10 seconds, at 5lbs. (2.3kg) tension
0.335 (8.51)
0.320 (8.12)
Mechanical Data
0.130 (3.3)
0.120 (3.05)
0.080 (2.03)
0.050 (1.27)
Case: Molded plastic body over passivated junctions
Terminals: Plated leads solderable per MIL-STD-750,
Method 2026
45 (1.14)
35 (0.89)
0.013 (3.3)
0.185 (4.69)
0.150 (3.81)
0.0086 (0.22)
0.023 (0.58)
0.018 (0.46)
Polarity: Polarity symbols as marked on body
Mounting Position: Any
0.350 (8.9)
0.300 (7.6)
0.075 (1.90)
0.055 (1.39)
0.205 (5.2)
0.195 (5.0)
Weight: 0.014 oz., 0.4 g
Packaging codes/options:
Dimensions in inches and (millimeters)
45/50 EA. per Bulk Tube
Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
B40
B80
B125
B250
B380
Parameter
Symbols C800DM C800DM C800DM C800DM C800DM Units
Maximum repetitive peak reverse voltage
Maximum RMS input voltage R + C-load
Maximum average forward output current for
VRRM
VRMS
65
40
125
80
200
125
400
250
600
380
V
V
free air operation at TA=45°C
R + L-load
C-load
IF(AV)
0.9
0.8
200
300
350
10
A
Maximum DC blocking voltage
Maximum peak working voltage
Maximum non-repetitive peak voltage
Maximum repetitive peak forward surge current
Peak forward surge current
single sine wave on rated load at TJ=125°C
Rating for fusing at TJ=125°C (t<100ms)
Minimum series resistor C-load at VRMS = ±10%
VDC
VRWM
VRSM
IFRM
65
90
100
125
180
200
400
600
650
600
900
1000
V
V
V
A
IFSM
45
A
I2t
RT
10
4.0
A2sec
Ω
1.0
2.0
8.0
12
Maximum load capacitance
+50%
-10%
CL
5000
2500
1000
500
200
µF
Typical thermal resistance per leg (1)
RΘJA
RΘJL
TJ
40
15
°C/W
Operating junction temperature range
Storage temperature range
-40 to +125
-40 to +150
°C
°C
TSTG
Electrical Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
B40
B80
B125
B250
B380
Parameter
Symbols C800DM C800DM C800DM C800DM C800DM Units
Maximum instantaneous forward voltage drop
per leg at 0.9A
Maximum reverse current at rated repetitive
peak voltage per leg
VF
IR
1.0
10
V
µA
Notes: (1) Thermal resistance from junction to ambient and from junction to lead P.C.B. mounted on 0.5 x 0.5" (13 x 13mm) copper pads
Document Number 88533
17-Jul-03
www.vishay.com
1
B40C800DM thru B380C800DM
Vishay Semiconductors
formerly General Semiconductor
Ratings and Characteristic Curves (TA = 25°C unless otherwise noted)
Fig. 1 — Derating Curves
Output Rectified Current For
B40C800DM...B125C800DM
Fig. 2 — Derating Curves
Output Rectified Current For
B250C800DM...B360C800DM
1.0
0.8
1.0
0.8
0.6
50 to 60 HZ
Resistive or Inductive Load
50 to 60 HZ
Resistive or Inductive Load
Capacitive Load
Capacitive Load
0-10µF
10-100µF
>100µF
0.6
0-10µF
10-100µF
>100µF
0.4
0.2
0.4
0.2
Mounted on P.C.B. with 0.06"
(1.5mm) Lead Length
Copper Pads
Mounted on P.C.B. with 0.06"
(1.5mm) Lead Length
Copper Pads
0.51 x 0.51" (13 x 13mm)
0.51 x 0.51" (13 x 13mm)
0
0
0
0
0
20
40
60
80
100
120
140
0
20
40
60
80
100
120
140
Ambient Temperature (°C)
Ambient Temperature (°C)
Fig. 3 — Maximum Non-Repetitive
Peak Forward Current Per Leg
Fig. 4 — Typical Forward
Characteristics Per Leg
50
40
30
20
10
0
10
1
T = 25°C
Pulse Width = 300µs
1% Duty Cycle
J
1.0 Cycle
T = 125°C
J
10mS Single Sine-Wave
0.1
0.01
10
100
0.4
0.6
0.8
1.0
1.2
1.4
Number of Cycles at 50HZ
Instantaneous Forward Voltage (V)
Fig. 5 — Typical Reverse Leakage
Characteristics Per Leg
Fig. 6 — Typical Junction Capacitance
Per Leg
10
1
100
10
1
T = 25°C
J
f = 1.0MHZ
Vsig = 50MVp-p
T = 100°C
J
0.1
T = 25°C
J
0.01
1
10
100
20
40
60
80
100
Percent of Rated Peak Reverse Voltage (%)
Reverse Voltage (V)
www.vishay.com
2
Document Number 88533
17-Jul-03
相关型号：
B40C800DM/51
Bridge Rectifier Diode, 1 Phase, 0.9A, 65V V(RRM), Silicon, PLASTIC, CASE DFM, 4 PIN
VISHAY
B40C800DM/51-E3
DIODE 0.9 A, 65 V, SILICON, BRIDGE RECTIFIER DIODE, PLASTIC, CASE DFM, 4 PIN, Bridge Rectifier Diode
VISHAY
B40C800DM/72
Bridge Rectifier Diode, 1 Phase, 0.9A, 65V V(RRM), Silicon, PLASTIC, CASE DFM, 4 PIN
VISHAY
B40C800DM/72-E3
DIODE 0.9 A, 65 V, SILICON, BRIDGE RECTIFIER DIODE, PLASTIC, CASE DFM, 4 PIN, Bridge Rectifier Diode
VISHAY
B40C800DME3
DIODE 0.9 A, 65 V, SILICON, BRIDGE RECTIFIER DIODE, LEAD FREE, PLASTIC, CASE DFM, 4 PIN, Bridge Rectifier Diode
VISHAY
B40C800G-E4
DIODE 0.9 A, 65 V, SILICON, BRIDGE RECTIFIER DIODE, LEAD FREE, PLASTIC, CASE WOG, 4 PIN, Bridge Rectifier Diode
VISHAY
B40C800G-E4/51
DIODE 0.9 A, 65 V, SILICON, BRIDGE RECTIFIER DIODE, ROHS COMPLIANT, PLASTIC, CASE WOG, 4 PIN, Bridge Rectifier Diode
VISHAY
B40C800G/1-E4
DIODE 0.9 A, 65 V, SILICON, BRIDGE RECTIFIER DIODE, PLASTIC, CASE WOG, 4 PIN, Bridge Rectifier Diode
VISHAY
B40C800G/51
Bridge Rectifier Diode, 1 Phase, 0.9A, 65V V(RRM), Silicon, PLASTIC, CASE WOG, 4 PIN
VISHAY
©2020 ICPDF网 联系我们和版权申明