BA157GPHE3/73 [VISHAY]
DIODE GEN PURP 400V 1A DO204AL;型号: | BA157GPHE3/73 |
厂家: | VISHAY |
描述: | DIODE GEN PURP 400V 1A DO204AL |
文件: | 总4页 (文件大小:66K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
BA157GP, BA158GP, BA159DGP, BA159GP
www.vishay.com
Vishay General Semiconductor
Glass Passivated Junction Fast Switching Plastic Rectifier
FEATURES
SUPERECTIFIER®
• Superectifier structure for high reliability condition
• Cavity-free glass-passivated junction
• Fast switching for high efficiency
• Low leakage current, typical IR less than 0.1 μA
• High forward surge capability
• Solder dip 275 °C max. 10 s, per JESD 22-B106
DO-41 (DO-204AL)
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
TYPICAL APPLICATIONS
IF(AV)
1.0 A
For general purpose of medium frequency rectification.
VRRM
400 V, 600 V, 800 V, 1000 V
MECHANICAL DATA
IFSM
20 A
150 ns, 250 ns, 500 ns
5.0 μA
Case: DO-41 (DO-204AL), molded epoxy over glass body
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
trr
IR
VF
1.3 V
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
TJ max.
175 °C
E3 suffix meets JESD 201 class 1A whisker test
Package
DO-41 (DO-204AL)
Single
Polarity: color band denotes cathode end
Circuit configuration
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL BA157GP
BA158GP BA159DGP BA159GP UNIT
Maximum repetitive peak reverse voltage
Maximum RMS voltage
VRRM
VRMS
VDC
400
280
400
600
420
600
800
560
800
1000
700
V
V
V
Maximum DC blocking voltage
1000
Maximum average forward rectified current 0.375" (9.5 mm)
lead length at TA = 55 °C
IF(AV)
1.0
20
A
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
IFSM
A
Operating junction and storage temperature range
TJ, TSTG
-65 to +175
°C
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS SYMBOL BA157GP
BA158GP BA159DGP BA159GP UNIT
Maximum instantaneous forward voltage 1.0 A
VF
IR
1.3
5.0
V
Maximum DC reverse current
at rated DC blocking voltage
TA = 25 °C
μA
IF = 0.5 A, IR = 1.0 A,
Irr = 0.25 A
Maximum reverse recovery time
Typical junction capacitance
trr
150
250
500
500
ns
4.0 V, 1 MHz
CJ
15
pF
Revision: 29-Apr-2020
Document Number: 88537
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BA157GP, BA158GP, BA159DGP, BA159GP
www.vishay.com
Vishay General Semiconductor
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL BA157GP
BA158GP BA159DGP BA159GP UNIT
55 °C/W
(1)
Typical thermal resistance
RθJA
Note
(1)
Thermal resistance from junction to ambient at 0.375" (9.5 mm) lead length, PCB mounted
ORDERING INFORMATION (Example)
PREFERRED P/N
BA158GP-E3/54
BA158GP-E3/73
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
0.336
54
73
5500
3000
13" Diameter paper tape and reel
Ammo pack packaging
0.336
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
1.0
0.8
0.6
0.4
0.2
0
10
TJ = 25 °C
Pulse Width = 300 μs
1 % Duty Cycle
1
0.1
Resistive or Inductive Load
0.375" (9.5 mm) Lead Length
0.01
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
25
50
75
100
125
150
175
Instantaneous Forward Voltage (V)
Ambient Temperature (°C)
Fig. 1 - Forward Current Derating Curve
Fig. 3 - Typical Instantaneous Forward Characteristics
20
15
10
5
100
TA = 25 °C
10 ms Single Half Sine-Wave
at Rated Load
10
TJ = 125 °C
1
TJ = 75 °C
0.1
TJ = 25 °C
60
0
0.01
0
20
40
80
100
1
10
100
Number of Cycles at 50 Hz
Percent of Rated Peak Reverse Voltage (%)
Fig. 2 - Maximum Non-repetitive Peak Forward Surge Current
Fig. 4 - Typical Reverse Characteristics
Revision: 29-Apr-2020
Document Number: 88537
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BA157GP, BA158GP, BA159DGP, BA159GP
www.vishay.com
Vishay General Semiconductor
100
100
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
10
10
1
1
0.1
1
10
100
0.01
0.1
1
10
100
t - Pulse Duration (s)
Reverse Voltage (V)
Fig. 5 - Typical Junction Capacitance
Fig. 6 - Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-41 (DO-204AL)
1.0 (25.4)
MIN.
0.107 (2.7)
0.080 (2.0)
DIA.
0.205 (5.2)
0.160 (4.1)
1.0 (25.4)
MIN.
0.034 (0.86)
0.028 (0.71)
DIA.
Note
• Lead diameter is
0.026 (0.66)
0.023 (0.58)
for suffix “E” part numbers
Revision: 29-Apr-2020
Document Number: 88537
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
datasheets and / or specifications may vary in different applications and performance may vary over time. All operating
parameters, including typical parameters, must be validated for each customer application by the customer's technical experts.
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© 2021 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 09-Jul-2021
Document Number: 91000
1
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