BA159GP-E3/23 [VISHAY]

Rectifier Diode, 1 Element, 1A, 1000V V(RRM), Silicon, DO-204AL, ROHS COMPLIANT, PLASTIC, DO-41, 2 PIN;
BA159GP-E3/23
型号: BA159GP-E3/23
厂家: VISHAY    VISHAY
描述:

Rectifier Diode, 1 Element, 1A, 1000V V(RRM), Silicon, DO-204AL, ROHS COMPLIANT, PLASTIC, DO-41, 2 PIN

文件: 总4页 (文件大小:85K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
BA157GP thru BA159GP  
Vishay General Semiconductor  
Glass Passivated Junction Fast Switching Rectifier  
FEATURES  
• Superectifier structure for High Reliability  
condition  
• Cavity-free glass-passivated junction  
• Fast switching for high efficiency  
• Low leakage current, typical I less than 0.1 µA  
R
• High forward surge capability  
* Glass-plastic encapsulation  
technique is covered by  
Patent No. 3,996,602,  
brazed-lead assembly  
by Patent No. 3,930,306  
• Meets environmental standard MIL-S-19500  
• Solder Dip 260 °C, 40 seconds  
DO-204AL (DO-41)  
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
TYPICAL APPLICATIONS  
For general purpose of medium frequency rectification.  
MAJOR RATINGS AND CHARACTERISTICS  
IF(AV)  
VRRM  
IFSM  
trr  
1.0 A  
400 V to 1000 V  
20 A  
MECHANICAL DATA  
Case: DO-204AL, molded epoxy over glass body  
Epoxy meets UL 94V-0 flammability rating  
Terminals: Matte tin plated leads, solderable per  
J-STD-002B and JESD22-B102D  
150 ns, 250 ns, 500 ns  
5.0 µA  
IR  
VF  
1.3 V  
E3 suffix for commercial grade, HE3 suffix for high  
reliability grade (AEC Q101 qualified)  
Tj max.  
175 °C  
Polarity: Color band denotes cathode end  
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)  
A
PARAMETER  
SYMBOL  
BA157GP  
BA158GP  
600  
BA159DGP  
800  
BA159GP  
1000  
UNIT  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VRRM  
400  
V
V
V
VRMS  
280  
420  
560  
700  
Maximum DC blocking voltage  
VDC  
400  
600  
800  
1000  
Maximum average forward rectified current 0.375" (9.5 mm)  
lead length at TA = 55 °C  
IF(AV)  
1.0  
A
Peak forward surge current 10 ms single half sine-wave  
superimposed on rated load  
IFSM  
20  
- 65 to + 175  
A
Operating junction and storage temperature range  
TJ, TSTG  
°C  
ELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise noted)  
A
PARAMETER  
TEST CONDITIONS  
SYMBOL BA157GP BA158GP BA159DGP BA159GP  
UNIT  
Maximum instantaneous forward voltage at 1.0 A  
VF  
1.3  
V
Maximum DC reverse current at rated DC  
blocking voltage  
TA = 25 °C  
IR  
5.0  
µA  
at IF = 0.5 A, IR = 1.0 A,  
Irr = 0.25 A  
Maximum reverse recovery time  
Typical junction capacitance  
trr  
150  
250  
500  
500  
ns  
at 4.0 V, 1 MHz  
CJ  
15  
pF  
Document Number 88537  
26-Apr-06  
www.vishay.com  
1
BA157GP thru BA159GP  
Vishay General Semiconductor  
THERMAL CHARACTERISTICS (T = 25 °C unless otherwise noted)  
A
PARAMETER  
Typical thermal resistance (1)  
SYMBOL  
BA157GP  
BA158GP  
BA159DGP  
55  
BA159GP  
UNIT  
RθJA  
°C/W  
Note:  
(1) Thermal resistance from junction to ambient at 0.375" (9.5 mm) lead length, P.C.B. mounted  
ORDERING INFORMATION  
PREFERRED P/N  
BA158GP-E3/54  
BA158GP-E3/73  
UNIT WEIGHT (g)  
PREFERRED PACKAGE CODE  
BASE QUANTITY  
DELIVERY MODE  
0.336  
54  
73  
5500  
3000  
13" Diameter Paper Tape & Reel  
Ammo Pack Packaging  
0.336  
RATINGS AND CHARACTERISTICS CURVES  
(T = 25 °C unless otherwise noted)  
A
1.0  
10  
Resistive or  
Inductive Load  
0.8  
1
0.6  
0.4  
0.2  
0
0.1  
TJ = 25 °C  
Pulse Width = 300 µs  
1 % Duty Cycle  
0.375" (9.5 mm) Lead Length  
0.01  
25  
50  
75  
100  
125  
150  
175  
0
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
Instantaneous Forward Voltage (V)  
Ambient Temperature (°C)  
Figure 1. Forward Current Derating Curve  
Figure 3. Typical Instantaneous Forward Characteristics  
20  
10  
20  
15  
TA = 25 °C  
10 ms Single Half Sine-Wave  
At Rated Load  
TJ = 125 °C  
1
10  
5
TJ = 75 °C  
0.1  
TJ = 25 °C  
0.01  
0
0
20  
40  
60  
80  
100  
1
10  
100  
Number of Cycles at 50 Hz  
Percent of Rated Peak Reverse Voltage (%)  
Figure 2. Maximum Non-repetitive Peak Forward Surge Current  
Figure 4. Typical Reverse Characteristics  
www.vishay.com  
2
Document Number 88537  
26-Apr-06  
BA157GP thru BA159GP  
Vishay General Semiconductor  
100  
100  
TJ = 25 °C  
f = 1.0 MHz  
Vsig = 50 mVp-p  
10  
10  
1
1
0.1  
1
10  
100  
0.01  
0.1  
1
10  
100  
Reverse Voltage (V)  
t - Pulse Duration (s)  
Figure 5. Typical Junction Capacitance  
Figure 6. Typical Transient Thermal Impedance  
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)  
DO-204AL (DO-41)  
1.0 (25.4)  
MIN.  
0.107 (2.7)  
0.080 (2.0)  
DIA.  
0.205 (5.2)  
0.160 (4.1)  
1.0 (25.4)  
MIN.  
0.034 (0.86)  
0.028 (0.71)  
DIA.  
Document Number 88537  
26-Apr-06  
www.vishay.com  
3
Legal Disclaimer Notice  
Vishay  
Notice  
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,  
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.  
Information contained herein is intended to provide a product description only. No license, express or implied, by  
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's  
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express  
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness  
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.  
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.  
Customers using or selling these products for use in such applications do so at their own risk and agree to fully  
indemnify Vishay for any damages resulting from such improper use or sale.  
Document Number: 91000  
Revision: 08-Apr-05  
www.vishay.com  
1

相关型号:

BA159GP-E3/54

DIODE FAST 0.5A 1000V DO-41
VISHAY

BA159GP-E3/73

DIODE GEN PURP 1KV 1A DO204AL
VISHAY

BA159GP-HE3

DIODE 1 A, 1000 V, SILICON, SIGNAL DIODE, DO-204AL, LEAD FREE, PLASTIC, DO-41, 2 PIN, Signal Diode
VISHAY

BA159GP-HE3/54

DIODE 1 A, 1000 V, SILICON, SIGNAL DIODE, DO-204AL, ROHS COMPLIANT, PLASTIC, DO-41, 2 PIN, Signal Diode
VISHAY

BA159GP-HE3/73

DIODE 1 A, 1000 V, SILICON, SIGNAL DIODE, DO-204AL, ROHS COMPLIANT, PLASTIC, DO-41, 2 PIN, Signal Diode
VISHAY

BA159GP-TP

Rectifier Diode, 1 Element, 1A, 1000V V(RRM), Silicon, DO-41, ROHS COMPLIANT, PLASTIC PACKAGE-2
MCC

BA159GP-TP-HF

Rectifier Diode, 1 Element, 1A, 1000V V(RRM), Silicon, DO-41,
MCC

BA159GP/100

Rectifier Diode, 1 Element, 1A, 1000V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN
VISHAY

BA159GP/23

Rectifier Diode, 1 Element, 1A, 1000V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN
VISHAY

BA159GP/4E

Rectifier Diode, 1 Element, 1A, 1000V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN
VISHAY

BA159GP/4F

Rectifier Diode, 1 Element, 1A, 1000V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN
VISHAY

BA159GP/4G

Rectifier Diode, 1 Element, 1A, 1000V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN
VISHAY