BA779S [VISHAY]

Silicon PIN Diodes; 硅PIN二极管
BA779S
型号: BA779S
厂家: VISHAY    VISHAY
描述:

Silicon PIN Diodes
硅PIN二极管

PIN二极管 测试 光电二极管 衰减器
文件: 总4页 (文件大小:57K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
BA779.BA779S  
Vishay Telefunken  
Silicon PIN Diodes  
Features  
Wide frequency range 10 MHz to 1 GHz  
Applications  
Current controlled HF resistance in adjustable  
attenuators  
94 8550  
Absolute Maximum Ratings  
T = 25 C  
j
Parameter  
Reverse voltage  
Test Conditions  
Type  
Symbol  
Value  
30  
Unit  
V
V
R
Forward current  
Junction temperature  
Storage temperature range  
I
T
T
stg  
50  
125  
–55...+125  
mA  
C
C
F
j
Maximum Thermal Resistance  
T = 25 C  
j
Parameter  
Junction ambient  
Test Conditions  
on PC board 50mmx50mmx1.6mm  
Symbol  
Value  
500  
Unit  
K/W  
R
thJA  
Electrical Characteristics  
T = 25 C  
j
Parameter  
Test Conditions  
I =20mA  
Type  
Symbol Min  
Typ Max Unit  
Forward voltage  
Reverse current  
Diode capacitance  
V
F
1
V
F
V =30 V  
I
R
50  
0.5  
50  
nA  
pF  
R
f=100MHz, V =0  
C
D
R
Differential forward re- f=100MHz, I =1.5mA  
r
F
f
sistance  
Reverse impedance  
f=100MHz, V =0  
BA779  
BA779S  
z
z
5
9
k
k
s
R
r
r
Minority carrier lifetime I =10mA, I =10mA  
4
F
R
Document Number 85532  
Rev. 3, 01-Apr-99  
www.vishay.de FaxBack +1-408-970-5600  
1 (4)  
BA779.BA779S  
Vishay Telefunken  
Characteristics (Tj = 25 C unless otherwise specified)  
100  
20  
–Circuitwith10dBAttenuation  
V =40dBmV  
f =100MHzunmodulated  
0
0
10  
1
–20  
T
amb  
=25°C  
1
–40  
–60  
–80  
Scattering Limit  
0.1  
0.01  
2.0  
80  
f , modulated with 200 kHz, m=100% (MHz)  
0
0.4  
0.8  
1.2  
1.6  
0
20  
40  
60  
95 9735  
V – Forward Voltage ( V )  
95 9733  
F
2
Figure 3. Typ. Cross Modulation Distortion vs  
Frequency f  
Figure 1. Forward Current vs. Forward Voltage  
2
10000  
1000  
100  
f>20MHz  
T =25°C  
j
10  
1
10  
0.001  
0.01  
0.1  
1
95 9734  
I – Forward Current ( mA )  
F
Figure 2. Differential Forward Resistance vs.  
Forward Current  
www.vishay.de FaxBack +1-408-970-5600  
2 (4)  
Document Number 85532  
Rev. 3, 01-Apr-99  
BA779.BA779S  
Vishay Telefunken  
Dimensions in mm  
14384  
top view  
14385  
Document Number 85532  
Rev. 3, 01-Apr-99  
www.vishay.de FaxBack +1-408-970-5600  
3 (4)  
BA779.BA779S  
Vishay Telefunken  
Ozone Depleting Substances Policy Statement  
It is the policy of Vishay Semiconductor GmbH to  
1. Meet all present and future national and international statutory requirements.  
2. Regularly and continuously improve the performance of our products, processes, distribution and operating  
systems  
with respect to their impact on the health and safety of our employees and the public, as well as their impact on  
the environment.  
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known  
as ozone depleting substances (ODSs).  
TheMontrealProtocol(1987)anditsLondonAmendments(1990)intendtoseverelyrestricttheuseofODSsand  
forbidtheirusewithinthenexttenyears.Variousnationalandinternationalinitiativesarepressingforanearlierban  
on these substances.  
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use  
of ODSs listed in the following documents.  
1. AnnexA,BandlistoftransitionalsubstancesoftheMontrealProtocolandtheLondonAmendmentsrespectively  
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental  
Protection Agency (EPA) in the USA  
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.  
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting  
substances and do not contain such substances.  
We reserve the right to make changes to improve technical design and may do so without further notice.  
Parameters can vary in different applications. All operating parameters must be validated for each customer  
application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized  
application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out  
of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or  
unauthorized use.  
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany  
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423  
www.vishay.de FaxBack +1-408-970-5600  
4 (4)  
Document Number 85532  
Rev. 3, 01-Apr-99  

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