BAQ33 [VISHAY]

Silicon Planar Diodes; 硅平面二极管
BAQ33
型号: BAQ33
厂家: VISHAY    VISHAY
描述:

Silicon Planar Diodes
硅平面二极管

整流二极管
文件: 总3页 (文件大小:51K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
BAQ33...BAQ35  
Vishay Telefunken  
Silicon Planar Diodes  
Features  
Very low reverse current  
Applications  
Protection circuits, time delay circuits, peak follower  
circuits, logarithmic amplifiers  
94 9371  
Absolute Maximum Ratings  
T = 25 C  
j
Parameter  
Reverse voltage  
Test Conditions  
Type  
Symbol  
Value  
30  
60  
Unit  
V
V
BAQ33  
BAQ34  
BAQ35  
V
R
V
R
V
R
125  
V
Peak forward surge current  
Forward current  
Junction temperature  
Storage temperature range  
t =1 s  
p
I
2
200  
200  
A
mA  
C
FSM  
I
F
T
j
T
–65...+200  
C
stg  
Maximum Thermal Resistance  
T = 25 C  
j
Parameter  
Junction ambient  
Test Conditions  
on PC board 50mmx50mmx1.6mm  
Symbol  
Value  
500  
Unit  
K/W  
R
thJA  
Electrical Characteristics  
T = 25 C  
j
Parameter  
Test Conditions  
Type  
Symbol Min  
Typ Max Unit  
Forward voltage  
Reverse current  
I =100mA  
V
1
3
0.5  
1
1
1
V
nA  
A
nA  
nA  
nA  
V
F
F
E
300lx, V  
I
I
I
I
I
1
R
R
E
E
E
E
300lx, V , T =125 C  
300lx, V =15V  
300lx, V =30V  
300lx, V =60V  
R
j
R
R
R
R
BAQ33  
BAQ34  
BAQ35  
BAQ33  
BAQ34  
BAQ35  
0.5  
0.5  
0.5  
R
R
R
Breakdown voltage I =5 A, t /T=0.01, t =0.3ms  
V
(BR)  
V
(BR)  
V
(BR)  
40  
70  
140  
R
p
p
V
V
Diode capacitance  
V =0, f=1MHz  
R
C
D
3
pF  
Document Number 85537  
Rev. 2, 01-Apr-99  
www.vishay.de FaxBack +1-408-970-5600  
1 (3)  
BAQ33...BAQ35  
Vishay Telefunken  
Characteristics (Tj = 25 C unless otherwise specified)  
10000  
1000  
100  
10  
1000  
100  
10  
V =V  
T =25°C  
j
R
RRM  
Scattering Limit  
Scattering Limit  
1
1
0.1  
200  
2.0  
0
40  
80  
120  
160  
0
0.4  
0.8  
V – Forward Voltage ( V )  
F
1.2  
1.6  
94 9079  
T – Junction Temperature ( °C )  
j
94 9078  
Figure 1. Reverse Current vs. Junction Temperature  
Figure 2. Forward Current vs. Forward Voltage  
Dimensions in mm  
96 12070  
www.vishay.de FaxBack +1-408-970-5600  
2 (3)  
Document Number 85537  
Rev. 2, 01-Apr-99  
BAQ33...BAQ35  
Vishay Telefunken  
Ozone Depleting Substances Policy Statement  
It is the policy of Vishay Semiconductor GmbH to  
1. Meet all present and future national and international statutory requirements.  
2. Regularly and continuously improve the performance of our products, processes, distribution and operating  
systems  
with respect to their impact on the health and safety of our employees and the public, as well as their impact on  
the environment.  
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known  
as ozone depleting substances (ODSs).  
TheMontrealProtocol(1987)anditsLondonAmendments(1990)intendtoseverelyrestricttheuseofODSsand  
forbidtheirusewithinthenexttenyears.Variousnationalandinternationalinitiativesarepressingforanearlierban  
on these substances.  
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use  
of ODSs listed in the following documents.  
1. AnnexA,BandlistoftransitionalsubstancesoftheMontrealProtocolandtheLondonAmendmentsrespectively  
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental  
Protection Agency (EPA) in the USA  
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.  
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting  
substances and do not contain such substances.  
We reserve the right to make changes to improve technical design and may do so without further notice.  
Parameters can vary in different applications. All operating parameters must be validated for each customer  
application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized  
application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out  
of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or  
unauthorized use.  
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany  
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423  
Document Number 85537  
Rev. 2, 01-Apr-99  
www.vishay.de FaxBack +1-408-970-5600  
3 (3)  

相关型号:

BAQ33-GS08

Small Signal Switching Diodes, Low Leakage Current
VISHAY

BAQ33-GS18

Small Signal Switching Diodes, Low Leakage Current
VISHAY

BAQ33...BAQ35

Silicon Planar Diodes
ETC

BAQ333

Silicon Planar Diodes
VISHAY

BAQ333-GS08

DIODE 0.2 A, 40 V, SILICON, SIGNAL DIODE, ROHS COMPLIANT, HERMETIC SEALED, GLASS, MICROMELF-2, Signal Diode
VISHAY

BAQ333-GS18

DIODE 0.2 A, 40 V, SILICON, SIGNAL DIODE, ROHS COMPLIANT, HERMETIC SEALED, GLASS, MICROMELF-2, Signal Diode
VISHAY

BAQ333-TR

Rectifier Diode, 1 Element, 30V V(RRM),
VISHAY

BAQ333-TR3

SWITCHING DIODE GENPURP MICROMELF-E2 - Tape and Reel
VISHAY

BAQ333TR

SIGNAL DIODE, GLASS, MICROMELF-2
VISHAY

BAQ333TR3

Rectifier Diode, GLASS, MICROMELF-2
VISHAY

BAQ333_06

Small Signal Switching Diodes, Low Leakage Current
VISHAY

BAQ334

Silicon Planar Diodes
VISHAY