BAS16D-G [VISHAY]
Small Signal Fast Switching Diode;型号: | BAS16D-G |
厂家: | VISHAY |
描述: | Small Signal Fast Switching Diode |
文件: | 总5页 (文件大小:96K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
BAS16D-G
Vishay Semiconductors
www.vishay.com
Small Signal Fast Switching Diode
FEATURES
• Silicon epitaxial planar diode
• Fast switching diode
• AEC-Q101 qualified
• Base P/N-G3 - green, commercial grade
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
MECHANICAL DATA
Case: SOD-123
Weight: approx. 9.4 mg
Packaging codes/options:
18/10K per 13" reel (8 mm tape), 10K/box
08/3K per 7" reel (8 mm tape), 15K/box
PARTS TABLE
PART
ORDERING CODE
INTERNAL CONSTRUCTION
Single diode
TYPE MARKING
REMARKS
BAS16D-G
BAS16D-G3-08 or BAS16D-G3-18
AK
Tape and reel
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
75
UNIT
V
Reverse voltage
VR
Repetitive peak reverse voltage
Forward current (continuous)
VRRM
IF
100
250
2
V
mA
A
t = 1 μs
t = 1 ms
t = 1 s
IFSM
IFSM
IFSM
Ptot
Non-repetitive peak forward current
Power dissipation (1)
1
A
0.5
350
A
mW
THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
RthJA
Tj
VALUE
375
UNIT
K/W
°C
Thermal resistance junction to ambient air (1)
Maximum junction temperature
Storage temperature range (1)
Operating temperature range
150
Tstg
- 65 to + 150
- 55 to + 150
°C
Top
°C
Note
(1)
Valid provided electrodes are kept at ambient temperature
Rev. 1.0, 13-May-13
Document Number: 85410
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BAS16D-G
Vishay Semiconductors
www.vishay.com
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
0.715
0.855
1
UNIT
V
IF = 1 mA
VF
VF
VF
VF
IR
IF = 10 mA
V
Forward voltage
IF = 50 mA
V
IF = 150 mA
1.25
30
V
V
R = 25 V, Tj = 150 °C
μA
μA
μA
pF
Leakage current
V
R = 75 V
R = 75 V, Tj = 150 °C
R = 0; f = 1 MHz
IF = 10 mA, IR = 10 mA,
R = 1 mA, RL = 100
IR
1
V
IR
50
Diode capacitance
V
CD
2
Reverse recovery time
trr
6
ns
i
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
mW
103
500
102
10
Tj = 100 °C
400
300
Ptot
Tj = 25 °C
1
200
100
0
10- 1
10- 2
0
1
2
0
100
200 °C
18105
VF (V)
Tamb
18186
Fig. 1 - Forward Characteristics
Fig. 3 - Admissible Power Dissipation vs.
Ambient Temperature
104
5
Tj = 25 °C
f = 1 kHz
Tj = 25 °C
f = 1 MHz
1.1
1.0
2
103
5
2
102
5
0.9
0.8
0.7
2
10
5
2
10-2
10-1
1
10
102
0
2
4
6
8
10
VR (V)
17440
17438
IF (mA)
Fig. 2 - Dynamic Forward Resistance vs. Forward Current
Fig. 4 - Relative Capacitance vs. Reverse Voltage
Rev. 1.0, 13-May-13
Document Number: 85410
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BAS16D-G
Vishay Semiconductors
www.vishay.com
104
5
2
103
5
2
102
5
2
10
5
VR = 20 V
2
1
0
100
Tj (°C)
200
17441
Fig. 5 - Leakage Current vs. Junction Temperature
A
100
I
5
4
3
V = tp/T
T = 1/fp
2
IFRM
IFRM
V = 0
10
tp
t
0.1
5
T
4
3
0.2
2
1
0.5
5
4
3
2
0.1
10-5
10-4
10-3
10-2
10-1
1
10 s
2
5
2
5
2
5
2
5
2
5
2
5
18106
tp
Fig. 6 - Admissible Repetitive Peak Forward Current vs. Pulse Duration
Rev. 1.0, 13-May-13
Document Number: 85410
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BAS16D-G
Vishay Semiconductors
www.vishay.com
PACKAGE DIMENSIONS in millimeters (inches): SOD-123
0.45 (0.018)
0.25 (0.010)
0.5 (0.020) ref.
Cathode bar
Mounting Pad Layout
2.85 (0.112)
2.55 (0.100)
0.85 (0.033)
0.85 (0.033)
3.85 (0.152)
3.55 (0.140)
2.5 (0.098)
Rev. 4 - Date: 24. Sep. 2009
Document no.: S8-V-3910.01-001 (4)
17432
Rev. 1.0, 13-May-13
Document Number: 85410
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
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Revision: 13-Jun-16
Document Number: 91000
1
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