BAS20/E8 [VISHAY]
Rectifier Diode, 1 Element, 0.2A, 200V V(RRM), Silicon, TO-236AB;
| 型号： | BAS20/E8 |
| 厂家： | 
VISHAY |
| 描述： | Rectifier Diode, 1 Element, 0.2A, 200V V(RRM), Silicon, TO-236AB |
| 文件： | 总2页 (文件大小：41K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BAS19 thru BAS21
Vishay Semiconductors
formerly General Semiconductor
Small-Signal Diodes
Mounting Pad Layout
0.031 (0.8)
TO-236AB (SOT-23)
0.035 (0.9)
.122 (3.1)
.110 (2.8)
.016 (0.4)
Top View
0.079 (2.0)
3
0.037 (0.95)
0.037 (0.95)
1
2
Features
• Silicon Epitaxial Planar Diode
.037(0.95)
.037(0.95)
• Fast switching diode in case SOT-23, especially
suited for automatic insertion.
• These diodes are also available in other case
styles including: the SOD-123 case with the type
designations BAV19W to BAV21W, the Mini-MELF
case with the type designation BAV101 to BAV103,
the DO-35 case with the type designations BAV19
to BAV21 and the SOD-323 case with type
designation BAV19WS to BAV21WS.
.102 (2.6)
.094 (2.4)
.016 (0.4) .016 (0.4)
Dimensions in inches and (millimeters)
Mechanical Data
Case: SOT-23 Plastic Package
Weight: approx. 0.008g
Marking
BAS19 = A8
BAS20 = A81
BAS21 = A82
Top View
Packaging Codes/Options:
E8/10K per 13” reel (8mm tape), 30K/box
E9/3K per 7” reel (8mm tape), 30K/box
Maximum Ratings and Thermal Characteristics (TA = 25°C unless otherwise noted)
Parameter
Symbol
Value
Unit
BAS19
BAS20
BAS21
100
150
200
Continuous Reverse Voltage
VR
V
BAS19
BAS20
BAS21
120
200
250
Repetitive Peak Reverse Voltage
VRRM
V
A
at t = 1µs
at t = 1s
2.5
0.5
200(1)
200(2)
Non-Repetitive Peak Forward Current
IFSM
IF(AV)
IF
Average Rectified Forward Current (av. over any 20ms period)
Forward DC Current at Tamb = 25°C
Repetitive Peak Forward Current
mA
mA
mA
mW
°C/W
°C
IFRM
Ptot
RΘJA
Tj
625
250(2)
430(2)
Power Dissipation up to Tamb = 25°C
Thermal Resistance Junction to Ambient Air
Junction Temperature
150
Storage Temperature Range
TS
–65 to +150
°C
Notes: (1) Measured under pulse conditions; Pulse time = tp ≤ 0.3ms
(2) Device on fiberglass substrate, see layout on next page
Document Number 88127
14-May-02
www.vishay.com
1
BAS19 thru BAS21
Vishay Semiconductors
formerly General Semiconductor
Electrical Characteristics (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
IF = 100mA
IF = 200mA
—
—
—
—
1.0
1.25
mV
mV
Forward Voltage
VF
VR = VRmax
VR = VRmax; Tj = 150°C
—
—
—
—
100
100
nA
µA
Leakage Current
IR
rf
Dynamic Forward Resistance
IF = 10mA
—
5
—
Ω
VR = 0
f = 1MHz
Capacitance
Ctot
trr
—
—
5
pF
IF = 30mA, IR = 30mA
Irr = 3mA, RL = 100Ω
Reverse Recovery Time (see figures)
—
—
50
ns
(1)Device on fiberglass substrate, see layout (SOT-23).
Test Circuit and Waveforms(BAS19, BAS20, BAS21)
Ω
Input signal
Test circuit
Waveforms; IR = 3 mA
Input Signal - total pulse duration
- duty factor
tp(tot) = 2µs
δ = 0.0025
tr = 0.6ns
tp = 100ns
- rise time of reverse pulse
- reverse pulse duration
Oscilloscope - rise time
- cicuit capitance*
tr = 0.35ns
C < 1pF
Output signal
*C = oscilloscope input capactitance + parasitic capacitance
Layout for RΘJA test
0.30 (7.5)
0.12 (3)
Thickness: Fiberglass 0.059 in. (1.5 mm)
Copper leads 0.012 in. (0.3 mm)
.04 (1)
.08 (2)
.04 (1)
.08 (2)
0.59 (15)
0.03 (0.8)
0.47 (12)
0.2 (5)
0.06 (1.5)
0.20 (5.1)
www.vishay.com
2
Document Number 88127
14-May-02
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