BAS20 [VISHAY]
Small Signal Diodes; 小信号二极管
| 型号： | BAS20 |
| 厂家： | 
VISHAY |
| 描述： | Small Signal Diodes |
| 文件： | 总3页 (文件大小：76K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BAS19, BAS20, BAS21
Small Signal Diodes
FEATURES
SOT-23
♦ Silicon Planar Epitaxial High-Speed
.122 (3.1)
.118 (3.0)
Diodes
.016 (0.4)
Top View
♦
3
For switching and general purpose
applications.
♦
These diodes are also available in other case styles includ-
ing: the SOD-123 case with the type designation BAV19W -
BAV21W, the MiniMELF case with the type designation
BAV101 - BAV103, and the DO-35 case with the type desig-
nation BAV19 - BAV21.
1
2
.037(0.95) .037(0.95)
MECHANICAL DATA
.102 (2.6)
.094 (2.4)
.016 (0.4) .016 (0.4)
Case: SOT-23 Plastic Package
Weight: approx. 0.008 g
Dimensions in inches and (millimeters)
3
Marking
BAS19 = A8
BAS20 = A81
Top View
BAS21 = A82
1
2
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at
ambient temperature unless otherwise specified
25 °C
Symbol
Value
Unit
Continuous Reverse Voltage
BAS19
BAS20
BAS21
V
V
V
100
150
200
V
V
V
R
R
R
Repetitive Peak Reverse Voltage
Non-Repetitive Peak Forward Current
BAS19
BAS20
BAS21
V
V
V
120
200
250
V
V
V
RRM
RRM
RRM
µ
at t = 1 s
I
I
2.5
0.5
A
A
FSM
FSM
at t = 1 s
Average Rectified Forward Current
(averaged over any 20 ms period)
I
2001)
mA
F(AV)
Forward DC Current at T
= 25 °C
I
I
2002)
mA
mA
mW
°C
amb
F
Repetitive Peak Forward Current
Power Dissipation up to T = 25 °C
625
FRM
P
2002)
amb
tot
Junction Temperature
T
T
150
j
Storage Temperature Range
– 65 to +150
°C
S
1)
≤
Measured under pulse conditions; Pulse time = tp 0.3 ms.
2) Device on fiberglass substrate, see layout.
4/98
BAS19, BAS20, BAS21
ELECTRICAL CHARACTERISTICS
Ratings at
ambient temperature unless otherwise specified
25 °C
Symbol
Min.
Typ.
Max.
Unit
Forward Voltage
at I = 100 mA
V
F
V
F
–
–
–
–
1.0
1.25
V
V
F
at I = 200 mA
F
Leakage Current
at V = V
I
–
–
–
–
100
100
nA
R
Rmax
Rmax
R
µ
A
at V = V
; T = 150 °C
I
R
R
j
Ω
Dynamic Forward Resistance
r
–
–
–
5
–
–
–
f
at I = 10 mA
F
Capacitance
C
5
pF
ns
tot
at V = 0, f = 1 MHz
R
Reverse Recovery Time (see figures)
t
rr
50
from I = 30 mA through I = 30 mA to I = 3 mA,
F
R
R
Ω
R = 100
L
Thermal Resistance Junction to Ambient Air
2) Device on fiberglass substrate, see layout.
R
–
–
4302)
K/W
thJA
.30 (7.5)
.12 (3)
.04 (1)
.08 (2)
.04 (1)
.08 (2)
.59 (15)
.03 (0.8)
0.2 (5)
.47 (12)
.06 (1.5)
.20 (5.1)
Dimensions in inches (millimeters)
Layout for R
test
th J A
Thickness: Fiberglass 0.059 in (1.5 mm)
Copper leads 0.012 in (0.3 mm)
Test Circuit and Waveforms BAS19, BAS20, BAS21
Test circuit
Waveforms; I = 3 mA
R
Input Signal
– total pulse duration
– duty factor
t
= 2 µs
p(tot)
δ = 0.0025
t = 0.6 ns
– rise time of reverse pulse
– reverse pulse duration
r
t = 100 ns
p
Oscilloscope
– rise time
t = 0.35 ns
r
– circuit capacitance*
C < 1 pF
*C = oscilloscope input capacitance + parasitic capacitance
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