BAS21-GS18 [VISHAY]
Rectifier Diode, 1 Element, 0.2A, 250V V(RRM), Silicon, PLASTIC PACKAGE-3;
| 型号： | BAS21-GS18 |
| 厂家： | 
VISHAY |
| 描述： | Rectifier Diode, 1 Element, 0.2A, 250V V(RRM), Silicon, PLASTIC PACKAGE-3 |
| 文件： | 总5页 (文件大小：477K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BAS19 / 20 / 21
Vishay Semiconductors
VISHAY
Small Signal Switching Diodes, High Voltage
Features
• Silicon Epitaxial Planar Diode
3
• Fast switching diode in case SOT-23, especially
suited for automatic insertion.
• These diodes are also available in other case
styles including:the SOD-123 case with the type
designations BAV19W to BAV21W, the Mini-
MELF case with the type designation BAV101 to
BAV103, the DO-35 case with the type designa-
tions BAV19 to BAV21 and the SOD-323 case with
type designation BAV19WS to BAV21WS.
1
2
16923
Mechanical Data
Case: SOT-23 Plastic case
Weight: approx. 8.8 mg
Packaging Codes/Options:
GS18 / 10 k per 13" reel (8 mm tape), 10 k/box
GS08 / 3 k per 7" reel (8 mm tape), 15 k/box
Parts Table
Part
Type differentiation
Ordering code
Marking
Remarks
BAS19
BAS20
BAS21
V
V
V
= 120 V
= 200 V
= 250 V
BAS19-GS18 or BAS19-GS08
A8
Tape and Reel
Tape and Reel
Tape and Reel
RRM
RRM
RRM
BAS20-GS18 or BAS20-GS08
BAS21-GS18 or BAS21-GS08
A81
A82
Document Number 85540
Rev. 1.5, 09-Jul-04
www.vishay.com
1
BAS19 / 20 / 21
Vishay Semiconductors
VISHAY
Absolute Maximum Ratings
T
= 25 °C, unless otherwise specified
Parameter
amb
Test condition
Part
Symbol
Value
100
Unit
V
Continuous reverse voltage
BAS19
V
V
V
R
R
R
BAS20
BAS21
BAS19
BAS20
BAS21
150
200
120
200
250
2.5
V
V
V
V
V
A
Repetitive peak reverse voltage
V
V
V
I
RRM
RRM
RRM
Non-repetitive peak forward
current
t = 1 µs
FSM
Non-repetitive peak forward
surge current
t = 1 s
I
0.5
A
FSM
1)
Maximum average forward
rectified current
(av. over any 20 ms period)
I
mA
F(AV)
200
2)
DC forward current
T
= 25 °C
I
mA
mA
mW
amb
F
200
Repetitive peak forward current
Power dissipation
I
625
FRM
2)
T
= 25 °C
P
tot
amb
250
1)
Measured under pulse conditions; Pulse time = T ≤ 0.3 ms
p
2)
Device on fiberglass substrate, see layout on next page
Thermal Characteristics
T
= 25 °C, unless otherwise specified
amb
Parameter
Test condition
Symbol
Value
Unit
°C
1)
Thermal resistance junction to ambient air
Junction temperature
R
thJA
430
T
150
°C
°C
j
Storage temperature range
T
- 65 to + 150
S
1)
Device on fiberglass substrate, see layout on next page
Electrical Characteristics
T
= 25 °C, unless otherwise specified
amb
Parameter
Test condition
= 100 mA
Symbol
Min
Typ.
Max
1.0
Unit
V
Forward voltage
Leakage current
I
I
V
V
F
F
F
F
= 200 mA
1.25
100
100
V
V
V
= V
= V
I
I
nA
µA
Ω
R
R
Rmax
Rmax
R
, T = 150 °C
j
R
Dynamic forward resistance
Diode capacitance
I
= 10 mA
r
5
F
f
V
= 0, f = 1 MHz
C
t
5
pF
ns
R
tot
Reverse recovery time
I
= I = 30 mA, R = 100 Ω,
50
F
R
L
rr
I
= 3 mA
rr
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2
Document Number 85540
Rev. 1.5, 09-Jul-04
BAS19 / 20 / 21
Vishay Semiconductors
VISHAY
Test Circuit and Waveforms
Ω
Input signal
Test circuit
Waveforms; IR = 3 mA
Input Signal - total pulse duration
- duty factor
tp(tot) = 2 µs
δ = 0.0025
tr = 0.6ns
- rise time of reverse pulse
- reverse pulse duration
tp = 100ns
Oscilloscope - rise time
- cicuit capitance*
tr = 0.35ns
C < 1pF
*C = oscilloscope input capactitance + parasitic capacitance
Output signal
18098
Layout for R
test
thJA
Thickness:
Fiberglass 1.5 mm (0.059 in.)
Copper leads 0.3 mm (0.012 in.)
7.5 (0.3)
3 (0.12)
1 (0.4)
2 (0.8)
2 (0.8)
1 (0.4)
12 (0.47)
0.8 (0.03)
15 (0.59)
5 (0.2)
1.5 (0.06)
5.1 (0.2)
17451
Document Number 85540
Rev. 1.5, 09-Jul-04
www.vishay.com
3
BAS19 / 20 / 21
Vishay Semiconductors
VISHAY
Package Dimensions in mm (Inches)
0.175 (.007)
0.098 (.005)
0.1 (.004) max.
2.6 (.102)
2.35 (.092)
0.4 (.016)
0.4 (.016)
ISO Method E
3.1 (.122)
Mounting Pad Layout
2.8 (.110)
0.4 (.016)
0.52 (0.020)
3
0.9 (0.035)
2.0 (0.079)
1
2
0.95 (.037)
0.95 (.037)
0.95 (0.037)
0.95 (0.037)
17418
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4
Document Number 85540
Rev. 1.5, 09-Jul-04
BAS19 / 20 / 21
Vishay Semiconductors
VISHAY
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the
use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Document Number 85540
Rev. 1.5, 09-Jul-04
www.vishay.com
5
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