BAS283GS08 [VISHAY]
0.03A, 60V, SILICON, SIGNAL DIODE, GLASS, SIMILAR TO DO-213AA, QUADROMELF-2;
| 型号： | BAS283GS08 |
| 厂家： | 
VISHAY |
| 描述： | 0.03A, 60V, SILICON, SIGNAL DIODE, GLASS, SIMILAR TO DO-213AA, QUADROMELF-2 二极管 |
| 文件： | 总4页 (文件大小：112K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BAS281...BAS283
Vishay Telefunken
Small SIgnal Schottky Barrier Diodes
Features
Integrated protection ring against
static discharge
Low capacitance
Low leakage current
Low forward voltage drop
Very low switching time
96 12009
Applications
General purpose and switching Schottky barrier diode
HF–Detector
Protection circuit
Diode for low currents with a low supply voltage
Small battery charger
Power supplies
DC / DC converter for notebooks
Order Instruction
Type
Type Differentiation
V = 40 V
Ordering Code
Remarks
BAS281
BAS282
BAS283
BAS281–GS08
BAS282–GS08
BAS283–GS08
Tape and Reel
Tape and Reel
Tape and Reel
R
V = 50 V
R
V = 60 V
R
Absolute Maximum Ratings
T = 25 C
j
Parameter
Reverse voltage
Test Conditions
Type
Symbol
Value
40
50
Unit
V
BAS281
BAS282
BAS283
V
R
60
Peak forward surge current
Repetitive peak forward current
Forward current
t =1s
p
I
500
150
30
125
mA
mA
mA
C
FSM
I
FRM
I
F
Junction temperature
T
j
Storage temperature range
T
stg
–65...+150
C
Maximum Thermal Resistance
T = 25 C
j
Parameter
Junction ambient
Test Conditions
on PC board 50 mmx50 mmx1.6 mm
Symbol
R
thJA
Value
320
Unit
K/W
www.vishay.com
1 (4)
Document Number 85500
Rev. 4, 31-Jan-01
BAS281...BAS283
Vishay Telefunken
Electrical Characteristics
T = 25 C
j
Parameter
Test Conditions
I =0.1mA
I =1mA
F
Type
Symbol Min
Typ Max Unit
V
F
V
F
V
F
330
410
1
mV
mV
V
F
Forward voltage
I =15mA
F
Reverse current
Diode capacitance
V =V
V =1 V, f=1MHz
R
I
R
200
1.6
nA
pF
R
Rmax
C
D
Characteristics (Tj = 25 C unless otherwise specified)
14
12
10
8
1000
100
10
V
= 60 V
R
R
=
thJA
T =150°C
j
540K/W
P –Limit
@100%V
R
R
T =25°C
j
6
1
P –Limit
R
4
@80%V
R
0.1
0.01
2
0
25
50
75
100
125
150
0
0.5
1.0
1.5
2.0
15794
T – Junction Temperature ( °C )
j
15796
V – Forward Voltage ( V )
F
Figure 1. Max. Reverse Power Dissipation vs.
Junction Temperature
Figure 3. Forward Current vs. Forward Voltage
1000.0
2.0
V
= V
RRM
f=1MHz
R
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
100.0
10.0
1.0
0.1
25
50
75
100
125
150
0.1
1.0
V – Reverse Voltage ( V )
R
10.0
100.0
15795
T – Junction Temperature ( °C )
j
15797
Figure 2. Reverse Current vs. Junction Temperature
Figure 4. Diode Capacitance vs. Reverse Voltage
www.vishay.com
2 (4)
Document Number 85500
Rev. 4, 31-Jan-01
BAS281...BAS283
Vishay Telefunken
Dimensions in mm
96 12071
www.vishay.com
3 (4)
Document Number 85500
Rev. 4, 31-Jan-01
BAS281...BAS283
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
www.vishay.com
4 (4)
Document Number 85500
Rev. 4, 31-Jan-01
相关型号：
©2020 ICPDF网 联系我们和版权申明