BAS381-GS18 [VISHAY]

DIODE 0.03 A, SILICON, SIGNAL DIODE, GLASS, MICROMELF-2, Signal Diode;
BAS381-GS18
型号: BAS381-GS18
厂家: VISHAY    VISHAY
描述:

DIODE 0.03 A, SILICON, SIGNAL DIODE, GLASS, MICROMELF-2, Signal Diode

信号二极管
文件: 总6页 (文件大小:168K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
BAS381 / 382 / 383  
VISHAY  
Vishay Semiconductors  
Small Signal Schottky Barrier Diodes  
Features  
• Integrated protection ring against static discharge  
• Low capacitance  
• Low leakage current  
• Low forward voltage drop  
• Very low switching time  
9612315  
Applications  
General purpose and switching Schottky barrier diode  
HF-Detector  
Protection circuit  
Diode for low currents with a low supply voltage  
Mechanical Data  
Case: MicroMELF Glass Case  
Weight: approx. 12 mg  
Small battery charger  
Power supplies  
DC / DC converter for notebooks  
Cathode Band Color: Black  
Packaging Codes/Options:  
GS18 / 10 k per 13" reel (8 mm tape), 10 k/box  
GS08 / 2.5 k per 7" reel (8 mm tape), 12.5 k/box  
Parts Table  
Part  
Type differentiation  
Ordering code  
Remarks  
Tape and Reel  
BAS381  
BAS382  
BAS383  
V
V
V
= 40 V  
= 50 V  
= 60 V  
BAS381-GS18 or BAS381-GS08  
R
R
R
BAS382-GS18 or BAS382-GS08  
BAS383-GS18 or BAS383-GS08  
Tape and Reel  
Tape and Reel  
Absolute Maximum Ratings  
T
= 25 °C, unless otherwise specified  
Parameter  
amb  
Test condition  
Part  
Symbol  
Value  
Unit  
V
Reverse voltage  
BAS381  
V
V
V
40  
50  
R
R
R
BAS382  
BAS383  
V
60  
V
Peak forward surge current  
Repetitive peak forward current  
Forward current  
t = 1 s  
I
500  
150  
30  
mA  
mA  
mA  
p
FSM  
FRM  
I
I
F
Document Number 85503  
Rev. 1.8, 27-Apr-04  
www.vishay.com  
1
BAS381 / 382 / 383  
Vishay Semiconductors  
VISHAY  
Thermal Characteristics  
T
= 25 °C, unless otherwise specified  
amb  
Parameter  
Test condition  
Symbol  
Value  
320  
Unit  
K/W  
Junction ambient  
on PC board  
50 mm x 50 mm x 1.6 mm  
R
thJA  
Junction temperature  
T
125  
°C  
°C  
j
Storage temperature range  
T
- 65 to + 150  
stg  
Electrical Characteristics  
T
= 25 °C, unless otherwise specified  
amb  
Parameter  
Test condition  
= 0.1 mA  
Symbol  
Min  
Typ.  
Max  
330  
Unit  
mV  
Forward voltage  
I
I
I
V
V
V
F
F
F
F
F
F
= 1 mA  
410  
1
mV  
V
= 15 mA  
Reverse current  
V
V
= V  
I
R
200  
1.6  
nA  
pF  
R
R
Rmax  
Diode capacitance  
= 1 V, f = 1 MHz  
C
D
Typical Characteristics (Tamb = 25 °C unless otherwise specified)  
1000  
100  
10  
14  
12  
10  
8
V
= 60 V  
R
V = V  
RRM  
R
= 540 K/W  
thJA  
P
- Limit @ 100 % V  
R
R
6
4
1
P
- Limit @ 80 % V  
R
R
2
0
0.1  
25  
50  
75  
100  
125  
150  
25  
50  
75  
100  
125  
150  
15794  
T - Junction Temperature ( ° C )  
j
15795  
T - Junction Temperature ( ° C )  
j
Fig. 1 Max. Reverse Power Dissipation vs. Junction Temperature  
Fig. 2 Reverse Current vs. Junction Temperature  
www.vishay.com  
2
Document Number 85503  
Rev. 1.8, 27-Apr-04  
BAS381 / 382 / 383  
VISHAY  
Vishay Semiconductors  
1000  
100  
10  
T = 150 °C  
j
T = 25 °C  
j
1
0.1  
0.01  
0
0.5  
1
1.5  
2.0  
15796  
V - Forward Voltage ( V )  
F
Fig. 3 Forward Current vs. Forward Voltage  
2.0  
f = 1 MHz  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0
0.1  
1
10  
V - Reverse Voltage ( V )  
R
100  
15797  
Fig. 4 Diode Capacitance vs. Reverse Voltage  
0.71  
1.3  
1.27  
0.152  
9.9  
0.355  
25  
10  
2.5  
24  
95 10329  
Fig. 5 Board for R  
definition (in mm)  
thJA  
Document Number 85503  
Rev. 1.8, 27-Apr-04  
www.vishay.com  
3
BAS381 / 382 / 383  
Vishay Semiconductors  
VISHAY  
Package Dimensions in mm  
ISO Method E  
9612072  
Reflow Soldering  
1.2 (0.047)  
Wave Soldering  
1.4 (0.055)  
0.9 (0.035)  
0.8 (0.031)  
0.8 (0.031)  
0.9 (0.035)  
0.8 (0.031)  
2.4 (0.094)  
1.0 (0.039)  
2.8 (0.109)  
www.vishay.com  
4
Document Number 85503  
Rev. 1.8, 27-Apr-04  
BAS381 / 382 / 383  
VISHAY  
Vishay Semiconductors  
Ozone Depleting Substances Policy Statement  
It is the policy of Vishay Semiconductor GmbH to  
1. Meet all present and future national and international statutory requirements.  
2. Regularly and continuously improve the performance of our products, processes, distribution and  
operatingsystems with respect to their impact on the health and safety of our employees and the public, as  
well as their impact on the environment.  
It is particular concern to control or eliminate releases of those substances into the atmosphere which are  
known as ozone depleting substances (ODSs).  
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs  
and forbid their use within the next ten years. Various national and international initiatives are pressing for an  
earlier ban on these substances.  
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the  
use of ODSs listed in the following documents.  
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments  
respectively  
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental  
Protection Agency (EPA) in the USA  
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.  
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting  
substances and do not contain such substances.  
We reserve the right to make changes to improve technical design  
and may do so without further notice.  
Parameters can vary in different applications. All operating parameters must be validated for each  
customer application by the customer. Should the buyer use Vishay Semiconductors products for any  
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all  
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal  
damage, injury or death associated with such unintended or unauthorized use.  
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany  
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423  
Document Number 85503  
Rev. 1.8, 27-Apr-04  
www.vishay.com  
5
Legal Disclaimer Notice  
Vishay  
Notice  
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,  
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.  
Information contained herein is intended to provide a product description only. No license, express or implied, by  
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's  
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express  
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness  
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.  
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.  
Customers using or selling these products for use in such applications do so at their own risk and agree to fully  
indemnify Vishay for any damages resulting from such improper use or sale.  
Document Number: 91000  
Revision: 08-Apr-05  
www.vishay.com  
1

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