BAS70-05-HE3-18 [VISHAY]
DIODE ARRAY SCHOTTKY 70V SOT23;型号: | BAS70-05-HE3-18 |
厂家: | VISHAY |
描述: | DIODE ARRAY SCHOTTKY 70V SOT23 |
文件: | 总3页 (文件大小:84K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
BAS70-00 to BAS70-06
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Vishay Semiconductors
Small Signal Schottky Diodes, Single and Dual
FEATURES
• These diodes feature very low turn-on voltage
and fast switching
• These devices are protected by a PN junction
guard ring against excessive voltage, such as
electrostatic discharges
• AEC-Q101 qualified available
• Base P/N-E3 - RoHS-compliant, commercial grade
• Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified
BAS70-00
BAS70-04
3
3
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
Top View
1
2
1
2
MECHANICAL DATA
Case: SOT-23
Weight: approx. 8.8 mg
BAS70-05
BAS70-06
3
3
Packaging codes/options:
18/10K per 13" reel (8 mm tape), 10K/box
Top View
08/3K per 7" reel (8 mm tape), 15K/box
1
2
1
2
DESIGN SUPPORT TOOLS click logo to get started
Models
Available
PARTS TABLE
PART
ORDERING CODE
CIRCUIT CONFIGURATION
TYPE MARKING
REMARKS
BAS70-00-E3-08 or BAS70-00-E3-18
BAS70-00-HE3-08 or BAS70-00-HE3-18
BAS70-04-E3-08 or BAS70-04-E3-18
BAS70-04-HE3-08 or BAS70-04-HE3-18
BAS70-05-E3-08 or BAS70-05-E3-18
BAS70-05-HE3-08 or BAS70-05-HE3-18
BAS70-06-E3-08 or BAS70-06-E3-18
BAS70-06-HE3-08 or BAS70-06-HE3-18
BAS70-00
Single
73
BAS70-04
BAS70-05
BAS70-06
Dual serial
74
75
76
Tape and reel
Common cathode
Common anode
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
70
UNIT
V
Repetitive peak reverse voltage
VRRM = VRRM = VR
(1)
Forward continuous current
Surge forward current (1)
Power dissipation (1)
IF
200
mA
mA
mW
tp < 1 s
IFSM
Ptot
600
200
Note
(1)
Device on fiberglass substrate, see layout on next page
THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
Thermal resistance junction to ambient air (1)
TEST CONDITION
SYMBOL
RthJA
Tj
VALUE
500
UNIT
K/W
°C
Junction temperature
125
Storage temperature range
Operating temperature range
Tstg
-65 to +150
-55 to +125
°C
Top
°C
Note
(1)
Device on fiberglass substrate, see layout on next page
Rev. 2.2, 13-Feb-18
Document Number: 85702
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BAS70-00 to BAS70-06
www.vishay.com
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
V
Reserve beakdown voltage
Leakage current
IR = 10 μA (pulsed)
V(BR)
IR
70
VR = 50 V
20
100
410
1000
2
nA
Forward voltage
Forward voltage (1)
IF = 1.0 mA
IF = 15 mA
VF
mV
mV
pF
VF
Diode capacitance
V
R = 0 V, f = 1 MHz
CD
1.5
IF = IR = 10 mA, iR = 1 mA,
Reserve recovery time
trr
5
ns
RL = 100
Note
(1)
Pulse test; tp 300 μs
LAYOUT FOR RthJA TEST
Thickness:
Fiberglass 1.5 mm (0.059")
Copper leads 0.3 mm (0.012")
7.5 (0.3)
3 (0.12)
1 (0.4)
2 (0.8)
1 (0.4)
12 (0.47)
2 (0.8)
0.8 (0.03)
15 (0.59)
5 (0.2)
1.5 (0.06)
5.1 (0.2)
17451
PACKAGE DIMENSIONS in millimeters (inches): SOT-23
3.1 (0.122)
2.8 (0.110)
0.550 ref. (0.022 ref.)
0.5 (0.020)
0.3 (0.012)
0.45 (0.018)
0.35 (0.014)
0.45 (0.018)
0.35 (0.014)
0° to 8°
2.6 (0.102)
2.35 (0.093)
0.45 (0.018)
0.35 (0.014)
Foot print recommendation:
0.7 (0.028)
1 (0.039)
0.9 (0.035)
1 (0.039)
0.9 (0.035)
0.95 (0.037)
0.95 (0.037)
Document no.: 6.541-5014.01-4
Rev. 8 - Date: 23.Sept.2009
17418
Rev. 2.2, 13-Feb-18
Document Number: 85702
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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www.vishay.com
Vishay
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Revision: 09-Jul-2021
Document Number: 91000
1
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