BAT46W [VISHAY]
Schottky Diodes; 肖特基二极管
| 型号： | BAT46W |
| 厂家： | 
VISHAY |
| 描述： | Schottky Diodes |
| 文件： | 总2页 (文件大小：42K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BAT46W
Schottky Diodes
FEATURES
SOD-123
For general purpose apllications.
♦
♦
.022 (0.55)
These diodes feature very low turn-
on voltage and fast switching. These
devices are protected by a PN junction guard
ring against excessive voltage, such as
electrostatic discharges.
Cathode Mark
Top View
♦
This diode is also available in the DO-35 case
with type designation BAT46 and in the
MiniMELF case with type designations LL46.
.067 (1.70)
.055 (1.40)
min. .010 (0.25)
MECHANICAL DATA
Case: SOD-123 Plastic Case
Weight: approx. 0.01 g
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at
ambient temperature unless otherwise specified
25 °C
Symbol
Value
100
Unit
V
Repetitive Peak Reverse Voltage
Forward Continuous Current at T
Repetitive Peak Forward Current
V
I
RRM
= 25 °C
150 2)
350 2)
mA
mA
amb
F
I
FRM
at t < 1 s, δ < 0.5, T
= 25 °C
p
amb
Surge Forward Current at t < 10 ms, T
= 25 °C
I
750 2)
mA
mW
°C
p
amb
FSM
Power Dissipation1) at T
= 65 °C
P
150 2)
amb
tot
Junction Temperature
T
125
j
Ambient Operating Temperature Range
Storage Temperature Range
T
–55 to +125
–55 to +150
°C
amb
T
°C
S
2) Valid provided that electrodes are kept at ambient temperature
4/98
BAT46W
ELECTRICAL CHARACTERISTICS
Ratings at
ambient temperature unless otherwise specified
25 °C
Symbol
Min.
100
Typ.
–
Max.
–
Unit
V
Reverse Breakdown Voltage
tested with 100 µA Pulses
V
(BR)R
Forward Voltage
Pulse Test t < 300 µs, δ < 2%
p
at I = 0.1 mA
V
F
V
F
V
F
–
–
–
–
–
–
0.25
0.45
1
V
V
V
F
at I = 10 mA
F
at I = 250 mA
F
Leakage Current
Pulse Test t < 300 µs, δ < 2%
p
µA
µA
µA
µA
µA
µA
µA
µA
at V = 1.5 V
I
I
I
I
I
I
I
I
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
0.5
5
0.8
7.5
2
15
5
20
R
R
at V = 1.5 V, T = 60 °C
R
j
R
R
R
R
R
R
R
at V = 10 V
R
at V = 10 V, T = 60 °C
R
j
at V = 50 V
R
at V = 50 V, T = 60 °C
R
j
at V = 75 V
R
at V = 75 V, T = 60 °C
R
j
Capacitance
at V = 0 V, f = 1 MHz
C
C
–
–
10
6
–
–
pF
pF
R
tot
tot
at V = 1 V, f = 1 MHz
R
Thermal Resistance Junction to Ambient Air
R
–
–
0.3 2)
K/mW
thJA
2) Valid provided that electrodes are kept at ambient temperature
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