概述
规格参数
数据手册
替代型号BAT54A-GS08 概述
Small Signal Schottky Diodes, Single Dual 小信号肖特基二极管，单双 整流二极管
BAT54A-GS08 规格参数
| 是否Rohs认证： | 符合 | 生命周期： | Obsolete |
| 包装说明： | R-PDSO-G3 | Reach Compliance Code： | compliant |
| ECCN代码： | EAR99 | HTS代码： | 8541.10.00.70 |
| 风险等级： | 5.35 | Is Samacsys： | N |
| 其他特性： | FAST SWITCHING | 配置： | COMMON ANODE, 2 ELEMENTS |
| 二极管元件材料： | SILICON | 二极管类型： | RECTIFIER DIODE |
| 最大正向电压 (VF)： | 0.24 V | JESD-30 代码： | R-PDSO-G3 |
| JESD-609代码： | e3 | 湿度敏感等级： | 1 |
| 最大非重复峰值正向电流： | 0.6 A | 元件数量： | 2 |
| 端子数量： | 3 | 最高工作温度： | 150 °C |
| 最大输出电流： | 0.2 A | 封装主体材料： | PLASTIC/EPOXY |
| 封装形状： | RECTANGULAR | 封装形式： | SMALL OUTLINE |
| 峰值回流温度（摄氏度）： | 260 | 最大功率耗散： | 0.23 W |
| 认证状态： | Not Qualified | 最大重复峰值反向电压： | 30 V |
| 最大反向恢复时间： | 0.005 µs | 子类别： | Rectifier Diodes |
| 表面贴装： | YES | 技术： | SCHOTTKY |
| 端子面层： | Matte Tin (Sn) | 端子形式： | GULL WING |
| 端子位置： | DUAL | 处于峰值回流温度下的最长时间： | 40 |
| Base Number Matches： | 1 |
BAT54A-GS08 数据手册
通过下载BAT54A-GS08数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。
PDF下载BAT54 / 54A / 54C / 54S
Vishay Semiconductors
Small Signal Schottky Diodes, Single & Dual
Features
• These diodes feature very low turn-on voltage and
fast switching.
• These devices are protected by a PN junction
guard ring against excessive voltage, such as
electrostatic discharges.
BAT54
3
BAT54A
3
Mechanical Data
Case: SOT-23 Plastic case
Weight: approx. 8.8 mg
Packaging Codes/Options:
GS18 / 10 k per 13" reel (8 mm tape), 10 k/box
GS08 / 3 k per 7" reel (8 mm tape), 15 k/box
Top View
Top View
1
2
1
2
BAT54S
3
BAT54C
3
1
2
1
2
18034
Parts Table
Part
Ordering code
BAT54-GS18 or BAT54-GS08
Marking
Remarks
BAT54
L4
Tape and Reel
Tape and Reel
Tape and Reel
Tape and Reel
BAT54A
BAT54C
BAT54S
BAT54A-GS18 or BAT54A-GS08
BAT54C-GS18 or BAT54C-GS08
BAT54S-GS18 or BAT54S-GS08
L42
L43
L44
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
VRRM
Value
Unit
Repetitive peak reverse voltage
30
V
2001)
3001)
6001)
230
Forward continuous current
Repetitive peak forward current
Surge forward current current
Power dissipation
IF
mA
mA
mA
mW
IFRM
IFSM
Ptot
tp < 1 s
1) Device on fiberglass substrate, see layout on next page.
Document Number 85508
Rev. 1.6, 24-Nov-04
www.vishay.com
1
BAT54 / 54A / 54C / 54S
Vishay Semiconductors
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
RthJA
Value
4301)
Unit
Thermal resistance junction to
ambiant air
°C/W
Junction temperature
Tj = Tstg
TS
- 65 to + 150
- 65 to + 150
°C
°C
Storage temperature range
1) Device on fiberglass substrate, see layout on next page.
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
IR = 100 µA pulses
Symbol
V(BR)
IR
Min
30
Typ.
Max
2
Unit
V
Reverse Breakdown voltage
Leakage current
Pulse test tp < 300 µs, δ < 2 % at
µA
VR = 25 V
Forward voltage
IF = 0.1 mA, tp < 300 µs, δ < 2 %
IF = 1 mA, tp < 300 µs, δ < 2 %
IF = 10 mA, tp < 300 µs, δ < 2 %
IF = 30 mA, tp < 300 µs, δ < 2 %
IF = 100 mA, tp < 300 µs, δ < 2 %
VF
VF
VF
VF
VF
Ctot
trr
240
320
400
500
1000
10
mV
mV
mV
mV
mV
pF
Diode capacitance
VR = 1 V, f = 1 MHz
Reverse recovery time
IF = 10 mA through IR = 10 mA
5
ns
to Irr = 1mA, RL = 100 Ω
Layout for R
test
thJA
Thickness:
Fiberglass 1.5 mm (0.059 in.)
Copper leads 0.3 mm (0.012 in.)
7.5 (0.3)
3 (0.12)
1 (0.4)
2 (0.8)
2 (0.8)
1 (0.4)
12 (0.47)
0.8 (0.03)
15 (0.59)
5 (0.2)
1.5 (0.06)
5.1 (0.2)
17451
www.vishay.com
2
Document Number 85508
Rev. 1.6, 24-Nov-04
BAT54 / 54A / 54C / 54S
Vishay Semiconductors
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
1000
100
TJ = 125°C
ˇ
ˇ
TJ = -40°C
10
1
ˇ
°
T
J
= 25 C
0.1
0.01
0
0.2 0.4 0.6 0.8 1.0
VF in V
1.2 1.4
18025
Figure 1. Typical Forward Voltage Forward Current at Various
Temperatures
14
12
10
8
6
4
2
0
20
24 28
0
8
12
16
4
18026
VR in V
Figure 2. Typical Capacitance °C vs. Reverse Applied Voltage VR
1000
100
TJ = 125°ˇC
TJ = 100°ˇC
TJ = 75°ˇC
10
1
TJ = 50ˇ°C
0.1
ˇ
TJ = 25°C
0.01
0
5
10
15
R in V
20
25
30
V
18027
Figure 3. Typical Variation of Reverse Current at Various
Temperatures
Document Number 85508
Rev. 1.6, 24-Nov-04
www.vishay.com
3
BAT54 / 54A / 54C / 54S
Vishay Semiconductors
Package Dimensions in mm (Inches)
0.175 (.007)
0.098 (.005)
0.1 (.004) max.
2.6 (.102)
2.35 (.092)
0.4 (.016)
0.4 (.016)
ISO Method E
3.1 (.122)
Mounting Pad Layout
2.8 (.110)
0.4 (.016)
0.52 (0.020)
3
0.9 (0.035)
2.0 (0.079)
1
2
0.95 (.037)
0.95 (.037)
0.95 (0.037)
0.95 (0.037)
17418
www.vishay.com
4
Document Number 85508
Rev. 1.6, 24-Nov-04
BAT54 / 54A / 54C / 54S
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Document Number 85508
Rev. 1.6, 24-Nov-04
www.vishay.com
5
BAT54A-GS08 替代型号
| 型号 | 制造商 | 描述 | 替代类型 | 文档 |
| BAT54A | DIOTEC | Surface mount Schottky-Barrier Single-/ Double-Diodes | 功能相似 |
|
| BAT54C | DIOTEC | Surface mount Schottky-Barrier Single-/ Double-Diodes | 功能相似 |
|
BAT54A-GS08 相关器件
| 型号 | 制造商 | 描述 | 价格 | 文档 |
| BAT54A-GS18 | VISHAY | Small Signal Schottky Diodes, Single Dual | 获取价格 |
|
| BAT54A-HE3-08 | VISHAY | Rectifier Diode, Schottky, 2 Element, 0.2A, 30V V(RRM), Silicon, ROHS COMPLIANT PACKAGE-3 | 获取价格 |
|
| BAT54A-HE3-18 | VISHAY | Rectifier Diode, Schottky, 2 Element, 0.2A, 30V V(RRM), Silicon, ROHS COMPLIANT PACKAGE-3 | 获取价格 |
|
| BAT54A-HF | COMCHIP | Rectifier Diode, | 获取价格 |
|
| BAT54A-KL2 | ETC | SCHOTTKY DIODES | 获取价格 |
|
| BAT54A-M0RF | TSC | 230mW SMD Schottky Barrier Diode | 获取价格 |
|
| BAT54A-M0RFG | TSC | 230mW SMD Schottky Barrier Diode | 获取价格 |
|
| BAT54A-Q | NEXPERIA | Schottky barrier diodeProduction | 获取价格 |
|
| BAT54A-Q1 | ANBON | SOT-23 | 获取价格 |
|
| BAT54A-T | WTE | Rectifier Diode, Schottky, 2 Element, 0.2A, 30V V(RRM), Silicon, PLASTIC PACKAGE-3 | 获取价格 |
|
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