BAV20/F2
更新时间：2024-09-18 14:52:26
品牌：VISHAY
描述：Rectifier Diode, 1 Element, 0.2A, 200V V(RRM), Silicon, DO-204AH, GLASS, DO-35, 2 PIN
概述
规格参数
数据手册BAV20/F2 概述
Rectifier Diode, 1 Element, 0.2A, 200V V(RRM), Silicon, DO-204AH, GLASS, DO-35, 2 PIN 整流二极管
BAV20/F2 规格参数
| 是否无铅： | 不含铅 | 是否Rohs认证： | 不符合 |
| 生命周期： | Transferred | 零件包装代码： | DO-35 |
| 包装说明： | O-LALF-W2 | 针数： | 2 |
| Reach Compliance Code： | unknown | ECCN代码： | EAR99 |
| HTS代码： | 8541.10.00.70 | 风险等级： | 5.42 |
| 外壳连接： | ISOLATED | 配置： | SINGLE |
| 二极管元件材料： | SILICON | 二极管类型： | RECTIFIER DIODE |
| 最大正向电压 (VF)： | 1 V | JEDEC-95代码： | DO-204AH |
| JESD-30 代码： | O-LALF-W2 | JESD-609代码： | e0 |
| 最大非重复峰值正向电流： | 1 A | 元件数量： | 1 |
| 端子数量： | 2 | 最高工作温度： | 175 °C |
| 最大输出电流： | 0.2 A | 封装主体材料： | GLASS |
| 封装形状： | ROUND | 封装形式： | LONG FORM |
| 最大功率耗散： | 0.5 W | 认证状态： | Not Qualified |
| 最大重复峰值反向电压： | 200 V | 最大反向恢复时间： | 0.05 µs |
| 子类别： | Rectifier Diodes | 表面贴装： | NO |
| 端子面层： | Tin/Lead (Sn/Pb) | 端子形式： | WIRE |
| 端子位置： | AXIAL | Base Number Matches： | 1 |
BAV20/F2 数据手册
通过下载BAV20/F2数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。
PDF下载BAV19 thru BAV21
Vishay Semiconductors
formerly General Semiconductor
Small-Signal Diodes
DO-204AH (DO-35 Glass)
Features
• Silicon Epitaxial Planar Diodes
• For general purpose
• This diode is also available in other case styles
including: the SOD-123 case with the type
designation BAV19W to BAV21W, the MiniMELF
case with the type designation BAV101 to BAV103,
the SOT-23 case with the type designation BAS19
to BAS21, and the SOD-323 case with type
designation BAV19WS to BAV21WS.
Mechanical Data
Case: DO-35 Glass Case
Weight: approx. 0.13g
Packaging Codes/Options:
F2/10K per Ammo tape (52mm tape), 50K/box
F3/10K per 13” reel (52mm tape), 50K/box
Dimensions in inches and (millimeters)
Maximum Ratings and Thermal Characteristics (TA = 25°C unless otherwise noted)
Parameter
Symbol
Value
Unit
Continuous Reverse Voltage
BAV19
BAV20
BAV21
100
150
200
VR
V
Repetitive Peak Reverse Voltage
BAV19
BAV20
BAV21
120
200
250
VRRM
IF
V
Forward DC Current at Tamb = 25°C(1)
250
mA
mA
Rectified Current (Average)
Half Wave Rectification with Resist. Load
at Tamb = 25°C(1)
IF(AV)
200
Repetitive Peak Forward Current
IFRM
625
mA
at f ≥ 50Hz, Θ = 180°, Tamb = 25°C(1)
Surge Forward Current at t < 1s, Tj = 25°C
Power Dissipation at Tamb = 25°C(1)
Thermal Resistance Junction to Ambient Air(1)
Junction Temperature(1)
IFSM
Ptot
RθJA
Tj
1
500
A
mW
°C/W
°C
430
175
Storage Temperature Range(1)
TS
–65 to +175
°C
Note:
(1) Valid provided that leads are kept at ambient temperature at a distance of 8mm from case.
Document Number 88149
14-May-02
www.vishay.com
1
BAV19 thru BAV21
Vishay Semiconductors
formerly General Semiconductor
Electrical Characteristics(TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
IF = 100mA
IF = 200mA
—
—
—
—
1.00
1.25
Forward Voltage
VF
V
BAV19
BAV19
BAV20
BAV20
BAV21
BAV21
VR = 100V
VR = 100V, Tj = 100°C
VR = 150V
VR = 150V, Tj = 100°C
VR = 200V
—
—
—
—
—
—
—
—
—
—
—
—
100
15
100
15
100
15
nA
µA
nA
µA
nA
µA
Leakage Current
IR
VR = 200V, Tj = 100°C
Dynamic Forward Resistance
Capacitance
rf
IF = 10mA
—
—
5
—
—
Ω
Ctot
VR = 0, f = 1MHz
1.5
pF
IF = 30mA, IR = 30mA
Irr = 3mA, RL = 100Ω
Reverse Recovery Time
trr
—
—
50
ns
Ratings and
Characteristic Curves(TA = 25°C unless otherwise noted)
www.vishay.com
2
Document Number 88149
14-May-02
BAV19 thru BAV21
Vishay Semiconductors
formerly General Semiconductor
Ratings and
Characteristic Curves (TA = 25°C unless otherwise noted)
Ω
Document Number 88149
14-May-02
www.vishay.com
3
BAV20/F2 相关器件
| 型号 | 制造商 | 描述 | 价格 | 文档 |
| BAV20/F3 | VISHAY | Rectifier Diode, 1 Element, 0.2A, 200V V(RRM), Silicon, DO-204AH, GLASS, DO-35, 2 PIN | 获取价格 |
|
| BAV200 | VISHAY | Silicon Epitaxial Planar Diodes | 获取价格 |
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| BAV200 | GOOD-ARK | Switching Diode | 获取价格 |
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| BAV200 | SEMTECH | SILICON EPITAXIAL PLANAR DIODES | 获取价格 |
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| BAV200, BAV201, BAV202, BAV203 | VISHAY | Small Signal Switching Diodes, High Voltage | 获取价格 |
|
| BAV200-GS08 | VISHAY | Small Signal Switching Diodes, High Voltage | 获取价格 |
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| BAV200-GS18 | VISHAY | Small Signal Switching Diodes, High Voltage | 获取价格 |
|
| BAV200...BAV203 | ETC | Silicon Epitaxial Planar Diodes | 获取价格 |
|
| BAV200GS08 | VISHAY | Rectifier Diode, 1 Element, 0.25A, 60V V(RRM), Silicon, GLASS, QUADROMELF-2 | 获取价格 |
|
| BAV200GS18 | VISHAY | Rectifier Diode, 1 Element, 0.25A, 60V V(RRM), Silicon, GLASS, QUADROMELF-2 | 获取价格 |
|
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