BAV21WS [VISHAY]
SMALL SIGNAL DIODES; 小信号二极管
| 型号： | BAV21WS |
| 厂家： | 
VISHAY |
| 描述： | SMALL SIGNAL DIODES |
| 文件： | 总4页 (文件大小：121K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NEW PRODUCT
NEW PRODUCT
NEW PRODUCT
BAV19WS THRU BAV21WS
SMALL SIGNAL DIODES
FEATURES
SOD-323
♦ Silicon Epitaxial Planar Diodes
.012 (0.3)
♦ For general purpose
Cathode Mark
♦ These diodes are also available in other case styles
including: the DO-35 case with the type designations
BAV19 to BAV21, the Mini-MELF case with the type
designations BAV100 to BAV103, the SOT-23 case with
the type designation BAS19 - BAS21 and the SOD-123
case with the type designation BAV19W-BAV21W.
Top View
.059 (1.5)
.043 (1.1)
min. .010 (0.25)
MECHANICAL DATA
Case: SOD-323 Plastic Case
Weight: approx. 0.004 g
Marking Code: BAV19WS=A8
BAV20WS=A81
Dimensions are in inches and (millimeters)
BAV21WS=A82
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
SYMBOLS
VALUE
UNITS
Continuous Reverse Voltage
BAV19WS
BAV20WS
BAV21WS
VR
VR
VR
100
150
200
Volts
Volts
Volts
Repetitive Peak Reverse Voltage
BAV19WS
BAV20WS
BAV21WS
VRRM
VRRM
VRRM
120
200
250
Volts
Volts
Volts
Forward DC Current at Tamb = 25 °C
IF
2501)
mA
Rectified Current (Average)
Half Wave Rectification with Resist. Load
Io
2001)
mA
at T
= 25 °C and f ≥ 50 Hz
amb
Repetitive Peak Forward Current
IFRM
6251)
mA
at f ≥ 50 Hz, Θ = 180 °, Tamb = 25 °C
Surge Forward Current at t < 1 s, Tj = 25 °C
Power Dissipation at Tamb = 25 °C
Junction Temperature
IFSM
Ptot
Tj
1
2001)
Amps
mW
°C
1501)
Storage Temperature Range
TS
–65 to + 1501)
°C
NOTES:
(1) Valid provided that electrodes are kept at ambient temperature
12/11/98
BAV19WS THRU BAV21WS
ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
SYMBOL
MIN.
TYP.
MAX.
UNIT
Forward voltage at IF = 100 mA
at IF = 200mA
VF
VF
–
–
–
–
1.00
1.25
Volts
Volts
Leakage Current
at VR = 100 V
at VR = 100 V, T = 100 °C
at VR = 150 V
at VR = 150 V, T = 100 °C
at VR = 200 V
at VR = 200 V, T = 100 °C
BAV19WS
IR
IR
IR
IR
IR
IR
–
–
–
–
–
–
–
–
–
–
–
–
100
15.0
100
15.0
100
15.0
nA
µA
nA
µA
nA
µA
BAV19WS
BAV20WS
BAV20WS
BAV21WS
BAV21WS
j
j
j
Dynamic Forward Resistance
at IF = 10 mA
rf
–
–
5
–
–
Ω
Capacitance
at VR = 0, f = 1 MHz
Ctot
1.5
pF
Reverse Recovery Time
from IF = 30 mA through IR = 30 mA to
IR = 3 mA; RL = 100Ω
trr
–
–
–
–
50
ns
Thermal Resistance
RthJA
6501)
K/W
Junction to Ambient Air
NOTES:
(1) Valid provided that electrodes are kept at ambient temperature
RATINGS AND CHARACTERISTIC CURVES BAV19WS THRU BAV21WS
°
RATINGS AND CHARACTERISTIC CURVES BAV19WS THRU BAV21WS
Ω
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