BAY135_12 [VISHAY]
Small Signal Fast Switching Diode, High Voltage; 小信号的快速开关二极管,高压型号: | BAY135_12 |
厂家: | VISHAY |
描述: | Small Signal Fast Switching Diode, High Voltage |
文件: | 总3页 (文件大小:73K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
BAY135
Vishay Semiconductors
www.vishay.com
Small Signal Fast Switching Diode, High Voltage
FEATURES
• Silicon planar diode
• Very low reverse current
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• Protection circuits, delay circuits
MECHANICAL DATA
Case: DO-35
Weight: approx. 125 mg
Cathode band color: black
Packaging codes/options:
TR/10K per 13" reel (52 mm tape), 50K/box
TAP/10K per ammopack (52 mm tape), 50K/box
PARTS TABLE
PART
ORDERING CODE
TYPE MARKING
INTERNAL CONSTRUCTION
REMARKS
BAY135
BAY135-TR or BAY135-TAP
BAY135
Single diode
Tape and reel/ammopack
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VRRM
VR
VALUE
UNIT
V
Repetitive peak reverse voltage
Reverse voltage
140
125
2
V
Peak forward surge current
Average forward current
tp = 1 μs
f = 50 Hz
IFSM
A
IF(AV)
200
mA
THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
RthJA
Tj
VALUE
350
UNIT
K/W
°C
Thermal resistance junction to ambient air
Junction temperature
l = 4 mm, TL = constant
175
Storage temperature range
Tstg
- 65 to + 175
°C
Rev. 1.8, 02-Aug-12
Document Number: 85552
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BAY135
Vishay Semiconductors
www.vishay.com
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
1000
3
UNIT
mV
nA
Forward voltage
IF = 30 mA
VF
IR
IR
IR
E 300 Ix, VR
Reverse current
E 300 Ix, VR, Tj = 125 °C
E 300 Ix, VR = 60 V
0.5
1
μA
nA
I
R = 5 μA, tp/T = 0.01,
tp = 0.3 ms
Breakdown voltage
Diode capacitance
V(BR)
CD
140
V
V
R = 0 V, f = 1 MHz,
5
pF
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
10 000
1000
100
1000
100
10
V
= V
RRM
R
T = 25 °C
j
Scattering Limit
Scattering Limit
10
1
1
0.1
0
40
80
120
160
200
0
0.4
0.8
1.2
1.6
2.0
T - Junction Temperature (°C)
j
V
- Forward Voltage (V)
94 9079
94 9078
F
Fig. 1 - Reverse Current vs. Junction Temperature
Fig. 2 - Forward Current vs. Forward Voltage
PACKAGE DIMENSIONS in millimeters (inches): DO-35
Cathode Identification
26 min. [1.024]
3.9 max. [0.154]
3.1 min. [0.120]
26 min. [1.024]
Rev. 6 - Date: 19. December 2011
Document no.: SB-V-3906.04-031(4)
94 9366
Rev. 1.8, 02-Aug-12
Document Number: 85552
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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Revision: 12-Mar-12
Document Number: 91000
1
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