BB731/D3 [VISHAY]

Variable Capacitance Diode, Very High Frequency, 50pF C(T), 32V, Silicon, PLASTIC, SOD-123, 2 PIN;
BB731/D3
型号: BB731/D3
厂家: VISHAY    VISHAY
描述:

Variable Capacitance Diode, Very High Frequency, 50pF C(T), 32V, Silicon, PLASTIC, SOD-123, 2 PIN

光电二极管
文件: 总3页 (文件大小:86K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
BB731 and BB731S  
Vishay Semiconductors  
formerly General Semiconductor  
Tuner Diodes  
SOD-123 (BB731)  
SOD-323 (BB731S)  
.022 (0.55)  
.012 (0.3)  
Cathode Band  
Cathode Band  
Top View  
)
5)  
)
5)  
Top View  
(
140(3.  
2
10(2.  
.
.
.
.
.059 (1.5)  
.043 (1.1)  
53)  
.
x
.067 (1.70)  
.055 (1.40)  
am  
51)  
.
x
503(1.  
.
amx.  
am  
6(0.  
4(0.1)  
.
.010 (0.25)  
min.  
.010 (0.25)  
min.  
Dimensions in inches and (millimeters)  
Mounting Pad Layout SOD-323 (BB731S)  
Mounting Pad Layout SOD-123 (BB731)  
0.055  
(1.40)  
0.062  
(1.60)  
0.055 (1.40)  
0.094 (2.40)  
Mechanical Data  
Case: BB731 = SOD-123 Plastic Case  
Features  
BB731S = SOD-323 Plastic Case  
Weight: BB731 = approx. 0.01g  
• Silicon epitaxial planar capacitance diodes with  
BB731S = approx. 0.004g  
very wide effective capacitance variation for tuning  
the VHF range 41 ... 170 MHz in hyperband  
television tuners.  
Packaging Codes/Options:  
SOD-123: D3/10K per 13reel (8mm tape), 30K/box  
D4/3K per 7reel (8mm tape), 30K/box  
SOD-323: D5/10K per 13reel (8mm tape), 30K/box  
D6/3K per 7reel (8mm tape), 30K/box  
• These diodes are available as singles or as matched  
sets of two or more units according to the tracking  
condition described in the table of characteristics.  
Maximum Ratings and Thermal Characteristics(TC = 25°C unless otherwise noted)  
Parameter  
Symbol  
Value  
Unit  
V
Reverse Voltage  
VR  
32  
Junction Temperature  
Storage Temperature Range  
TJ  
125  
°C  
°C  
TS  
55 to +125  
Document Number 88157  
15-May-02  
www.vishay.com  
1
BB731 and BB731S  
Vishay Semiconductors  
formerly General Semiconductor  
Electrical Characteristics(TC = 25°C unless otherwise noted)  
Parameter  
Symbol  
Min  
Typ  
Max  
Unit  
Reverse Breakdown Voltage  
at IR = 100µA  
V(BR)R  
32  
V
Leakage Current  
at VR = 30V  
IR  
30  
nA  
Capacitance f = 1MHZ  
at VR = 28V  
at VR = 25V  
3.15  
3.5  
50  
3.55  
Ctot  
pF  
at VR = 1V  
Effective Capacitance Ratio f = 1MHZ  
at VR = 1 to 28V  
Ctot (1V)  
19.5  
25  
Ctot (28V)  
at VR = 3 to 25V  
Ctot (3V)  
14  
Ctot (25V)  
Series Resistance  
at f = 300 MHZ, Ctot = 25 pF  
rs  
0.9  
2.5  
1.0  
Series Inductance  
Ls  
nH  
For any two of six consecutive diodes in the carrier tape, the maximum capacitance deviation in the reverse bias voltage of  
VR = 0.5 to 28V is 3%  
www.vishay.com  
2
Document Number 88157  
15-May-02  
BB731 and BB731S  
Vishay Semiconductors  
formerly General Semiconductor  
Ratings and  
Characteristic Curves (TA = 25°C unless otherwise noted)  
Document Number 88157  
15-May-02  
www.vishay.com  
3

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