BC548A-TAP [VISHAY]
Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, PLASTIC PACKAGE-3;
| 型号： | BC548A-TAP |
| 厂家： | 
VISHAY |
| 描述： | Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, PLASTIC PACKAGE-3 |
| 文件： | 总8页 (文件大小：105K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BC546 / 547 / 548
Vishay Semiconductors
Small Signal Transistors (NPN)
Features
• NPN Silicon Epitaxial Planar Transistors
C 1
• These transistors are subdivided into three groups
A, B, and C according to their current gain. The
type BC546 is available in groups A and B, how-
ever, the types BC547 and BC548 can be supplied
in all three groups. As complementary types the
PNP transistors BC556...BC558 are recom-
mended.
2
B
3
2
1
E 3
18855_1
• On special request, these transistors are also
manufactured in the pin configuration TO-18.
Mechanical Data
Case: TO-92 Plastic case
Weight: approx. 177 mg
Packaging Codes/Options:
BULK / 5 k per container 20 k/box
TAP / 4 k per Ammopack 20 k/box
Parts Table
Part
Ordering code
BC546A-BULK or BC546A-TAP
Remarks
Bulk / Ammopack
Bulk / Ammopack
Bulk / Ammopack
Bulk / Ammopack
Bulk / Ammopack
Bulk / Ammopack
Bulk / Ammopack
Bulk / Ammopack
BC546A
BC546B
BC547A
BC547B
BC547C
BC548A
BC548B
BC548C
BC546B-BULK or BC546B-TAP
BC547A-BULK or BC547A-TAP
BC547B-BULK or BC547B-TAP
BC547C-BULK or BC547C-TAP
BC548A-BULK or BC548A-TAP
BC548B-BULK or BC548B-TAP
BC548C-BULK or BC548C-TAP
Document Number 85113
Rev. 1.2, 02-Nov-04
www.vishay.com
1
BC546 / 547 / 548
Vishay Semiconductors
VISHAY
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Part
Symbol
VCBO
Value
80
Unit
V
Collector - base voltage
BC546
BC547
BC548
BC546
BC547
BC548
BC546
BC547
BC548
BC546
BC547
BC548
VCBO
VCBO
VCES
VCES
VCES
VCEO
VCEO
VCEO
VEBO
VEBO
VEBO
IC
50
30
80
50
30
65
45
30
6
V
V
Collector - emitter voltage
V
V
V
V
V
V
Emitter - base voltage
V
6
V
5
V
Collector current
100
200
200
200
mA
mA
mA
mA
mW
Collector peak current
Peak base current
Peak emitter current
Power dissipation
ICM
IBM
- IEM
Ptot
5001)
Tamb = 25 °C
1) Valid provided that leads are kept at ambient temperature at distance of 2 mm from case.
Maximum Thermal Resistance
Parameter
Test condition
Symbol
Value
2501)
Unit
Thermal resistance junction to
ambient air
RθJA
°C/W
Junction temperature
Tj
150
°C
°C
Storage temperature range
TS
- 65 to + 150
1) Valid provided that leads are kept at ambient temperature at distance of 2 mm from case.
Electrical DC Characteristics
Parameter
Test condition
Part
Symbol
hfe
Min
Typ
Max
Unit
Small signal current gain
(current gain group A)
VCE = 5 V, IC = 2 mA, f = 1 kHz
220
330
600
2.7
4.5
8.7
18
Small signal current gain
(current gain group B)
VCE = 5 V, IC = 2 mA, f = 1 kHz
VCE = 5 V, IC = 2 mA, f = 1 kHz
VCE = 5 V, IC = 2 mA, f = 1 kHz
VCE = 5 V, IC = 2 mA, f = 1 kHz
VCE = 5 V, IC = 2 mA, f = 1 kHz
VCE = 5 V, IC = 2 mA, f = 1 kHz
VCE = 5 V, IC = 2 mA, f = 1 kHz
VCE = 5 V, IC = 2 mA, f = 1 kHz
hfe
hfe
hie
Small signal current gain
(current gain group C)
Input impedance
(current gain group A)
1.6
3.2
6
4.5
8.5
15
kΩ
kΩ
kΩ
µS
µS
µS
Input impedance
(current gain group B)
hie
Input impedance
(current gain group C)
hie
Output admittance
(current gain group A)
hoe
hoe
hoe
30
Output admittance
(current gain group B)
30
60
Output admittance
60
110
(current gain group C)
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2
Document Number 85113
Rev. 1.2, 02-Nov-04
BC546 / 547 / 548
VISHAY
Vishay Semiconductors
Parameter
Test condition
Part
Symbol
hre
Min
Typ
1.5 x 10-4
Max
Unit
Reverse voltage transfer ratio
(current gain group A)
VCE = 5 V, IC = 2 mA, f = 1 kHz
2 x 10-4
Reverse voltage transfer ratio
(current gain group B)
VCE = 5 V, IC = 2 mA, f = 1 kHz
VCE = 5 V, IC = 2 mA, f = 1 kHz
VCE = 5 V, IC = 10 µA
VCE = 5 V, IC = 10 µA
VCE = 5 V, IC = 10 µA
VCE = 5 V, IC = 2 mA
hre
hre
3 x 10-4
90
Reverse voltage transfer ratio
(current gain group C)
DC current gain
(current gain group A)
hFE
hFE
hFE
hFE
hFE
hFE
hFE
hFE
hFE
DC current gain
(current gain group B)
150
270
180
290
500
120
200
400
DC current gain
(current gain group C)
DC current gain
(current gain group A)
110
200
420
220
450
800
DC current gain
(current gain group B)
VCE = 5 V, IC = 2 mA
DC current gain
(current gain group C)
VCE = 5 V, IC = 2 mA
DC current gain
(current gain group A)
VCE = 5 V, IC = 100 mA
VCE = 5 V, IC = 100 mA
VCE = 5 V, IC = 100 mA
IC = 10 mA, IB = 0.5 mA
DC current gain
(current gain group B)
DC current gain
(current gain group C)
Collector saturation voltage
VCEsat
VCEsat
VBEsat
VBEsat
VBE
80
200
600
mV
mV
mV
mV
mV
mV
nA
I
I
I
C = 100 mA, IB = 5 mA
C = 10 mA, IB = 0.5 mA
C = 100 mA, IB = 5 mA
200
700
900
660
Base saturation voltage
Base - emitter voltage
V
V
V
V
V
CE = 5 V, IC = 2 mA
CE = 5 V, IC = 10 mA
CE = 80 V
580
700
720
15
15
15
4
VBE
Collector-emitter cut-off current
BC546
BC547
BC548
BC546
BC547
BC548
ICES
0.2
0.2
0.2
CE = 50 V
ICES
nA
CE = 30 V
ICES
nA
VCE = 80 V, Tj = 125 °C
ICES
µA
V
V
CE = 50 V, Tj = 125 °C
CE = 30 V, Tj = 125 °C
ICES
4
µA
ICES
4
µA
Electrical AC Characteristics
Parameter
Test condition
Part
Symbol
fT
Min
Typ
300
Max
Unit
Gain - bandwidth product
VCE = 5 V, IC = 10 mA,
f = 100 MHz
MHz
Collector - base capacitance
Emitter - base capacitance
Noise figure
V
V
V
CB = 10 V, f = 1 MHz
EB = 0.5 V, f = 1 MHz
CE = 5 V, IC = 200 µA,
CCBO
CEBO
F
3.5
9
6
pF
pF
dB
BC546
2
10
RG = 2 kΩ, f = 1 kHz,
∆f = 200 Hz
BC547
BC548
F
F
2
10
4
dB
dB
1.2
Document Number 85113
Rev. 1.2, 02-Nov-04
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3
BC546 / 547 / 548
Vishay Semiconductors
VISHAY
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
10000
1000
100
10
500
400
300
200
100
0
maximum
typical
Test voltage V
:
CBO
1
equal to the given
maximum value V
CES
0.1
0
0
20 40 60 80 100 120 140 160 180 200
20 40 60 80 100 120 140 160 180 200
18865
T
amb
- Ambient Temperature ( °C )
T
amb
- Ambient Temperature (°C )
18826
Figure 1. Admissible Power Dissipation vs. Ambient Temperature
Figure 4. Collector-Base Cutoff Current vs. Ambient Temperature
100
1000
V
CE
= 5 V
T
amb
= 100 °C
25 °C
10
100
10
1
T
= 100°C
- 50°C
amb
V
CE
= 5 V
- 50°C
1
25°C
0.1
0.01
0.1
1
10
100
0
0.2
0.4
0.6
0.8
1
18824
18827
I
- Collector Current ( mA )
V
BE
- Base-Emitter Voltage ( V )
C
Figure 2. DC Current Gain vs. Collector Current
Figure 5. Collector Current vs. Base-Emitter Voltage
3
10
8
10
0.2
2
10
0.1
C
EBO
0.05
0.02
6
4
2
0
10
0.01
C
CBO
0.005
t
p
1
ν
= 0
ν
= t /T
p
T
amb
= 25°C
P
I
T
-1
10
-6
-4
-2
2
0.1
1
10
10
10
t
10
1
10
18866
V
CBO
, V
EBO
- Reverse Bias Voltage ( V )
18828
- Pulse Length ( s )
p
Figure 3. Pulse Thermal Resistance vs. Pulse Duration
Figure 6. Collector-Base Capacitance, Emitter-Base Capacitance
vs. Bias Voltage
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Document Number 85113
Rev. 1.2, 02-Nov-04
4
BC546 / 547 / 548
VISHAY
Vishay Semiconductors
0.5
0.4
I
/ I = 20
B
C
0.3
0.2
T
amb
= 100°C
0.1
0
25°C
- 50°C
0.1
1
10
100
I
- Collector Current ( mA )
18829
C
Figure 7. Collector Saturation Voltage vs. Collector Current
100
V
T
= 5 V
CE
= 25°C
h
amb
ie
10
1
h
re
h
fe
h
oe
0.1
0.1
10
1
I
- Collector Current ( mA )
18830
C
Figure 8. Relative h-Parameters vs. Collector Current
1000
T
amb
= 25°C
V
CE
= 10 V
5 V
2 V
100
10
0.1
10
1
- Collector Current ( mA )
100
18831
I
C
Figure 9. Gain-Bandwidth Product vs. Collector Current
Document Number 85113
Rev. 1.2, 02-Nov-04
www.vishay.com
5
BC546 / 547 / 548
Vishay Semiconductors
VISHAY
Packaging for Radial Taping
Dimensions in mm
± 2
±2.7 ±±
± ±
Vers. Dim. "H"
27 ± 0.5
FSZ
0.9 max
5.08 ± 0.7
+ 0.6
4
± 0.2
2.54
- 0.±
6.3 ± 0.7
±2.7 ± 0.2
Measure limit over 20 index - holes: ± ±
±8787
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6
Document Number 85113
Rev. 1.2, 02-Nov-04
BC546 / 547 / 548
VISHAY
Vishay Semiconductors
Package Dimensions in mm (Inches)
4.6 (0.181)
3.6 (0.142)
max. 0.55 (0.022)
2.5 (0.098)
Bottom
View
18776
Document Number 85113
Rev. 1.2, 02-Nov-04
www.vishay.com
7
BC546 / 547 / 548
Vishay Semiconductors
VISHAY
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
www.vishay.com
8
Document Number 85113
Rev. 1.2, 02-Nov-04
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