BC558-TAP [VISHAY]

TRANSISTOR 100 mA, 65 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, PLASTIC PACKAGE-3, BIP General Purpose Small Signal;
BC558-TAP
型号: BC558-TAP
厂家: VISHAY    VISHAY
描述:

TRANSISTOR 100 mA, 65 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, PLASTIC PACKAGE-3, BIP General Purpose Small Signal

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BC556 THRU BC559  
Small Signal Transistors (PNP)  
TO-92  
FEATURES  
PNP Silicon Epitaxial Planar Transistors for  
switching and AF amplifier applications.  
.142 (3.6)  
.181 (4.6)  
These transistors are subdivided into  
three groups A, B and C according to  
their current gain. The type BC556 is avail-  
able in groups A and B, however, the types  
BC557 and BC558 can be supplied in all three  
groups. The BC559 is a low-noise type available  
in all three groups. As complementary types, the  
NPN transistors BC546 … BC549 are recommended.  
.
.022 (0.55)  
.098 (2.5)  
max  
On special request, these transistors are also manufac-  
tured in the pin configuration TO-18.  
E
C
MECHANICAL DATA  
Case: TO-92 Plastic Package  
Weight: approx. 0.18 g  
B
Dimensions in inches and (millimeters)  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at  
ambient temperature unless otherwise specified  
25 °C  
Symbol  
Value  
Unit  
Collector-Base Voltage  
Collector-Emitter Voltage  
Collector-Emitter Voltage  
BC556  
BC557  
BC558, BC559  
–V  
–V  
–V  
80  
50  
30  
V
V
V
CBO  
CBO  
CBO  
BC556  
BC557  
BC558, BC559  
–V  
–V  
–V  
80  
50  
30  
V
V
V
CES  
CES  
CES  
BC556  
BC557  
BC558, BC559  
–V  
–V  
–V  
65  
45  
30  
V
V
V
CEO  
CEO  
CEO  
Emitter-Base Voltage  
Collector Current  
–V  
5
V
EBO  
–I  
–I  
–I  
100  
mA  
mA  
mA  
mA  
mW  
°C  
C
Peak Collector Current  
Peak Base Current  
Peak Emitter Current  
200  
CM  
BM  
200  
I
200  
EM  
Power Dissipation at T  
= 25 °C  
P
tot  
5001)  
150  
amb  
Junction Temperature  
T
T
j
Storage Temperature Range  
–65 to +150  
°C  
S
1) Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case.  
4/98  
BC556 THRU BC559  
ELECTRICAL CHARACTERISTICS  
Ratings at  
ambient temperature unless otherwise specified  
25 °C  
Symbol  
Min.  
Typ.  
Max.  
Unit  
h-Parameters  
at –V = 5 V, I = 2 mA, f = 1 kHz  
CE  
C
Current Gain  
Current Gain Group A  
h
1.6  
3.2  
6
220  
330  
600  
2.7  
4.5  
8.7  
18  
4.5  
8.5  
15  
30  
60  
110  
k
k
k
µ
µ
µ
fe  
fe  
B
C
h
h
h
h
h
h
h
h
fe  
ie  
Input Impedance  
Current Gain Group A  
B
C
ie  
ie  
S
S
S
Output Admittance  
Current Gain Group A  
oe  
oe  
oe  
30  
60  
B
C
Reverse Voltage Transfer Ratio  
–4  
·
h
h
h
1.5 10  
Current Gain Group A  
re  
re  
re  
–4  
·
2 10  
B
C
–4  
·
3 10  
DC Current Gain  
at –V = 5 V, I = 10 A  
µ
CE  
C
h
h
h
90  
150  
270  
Current Gain Group A  
FE  
FE  
FE  
B
C
at –V = 5 V, I = 2 mA  
CE  
C
h
h
h
110  
200  
420  
180  
290  
500  
220  
450  
800  
Current Gain Group A  
FE  
FE  
FE  
B
C
at –V = 5 V, I = 100 mA  
CE  
C
Current Gain Group A  
h
h
h
120  
200  
400  
FE  
FE  
FE  
B
C
Thermal Resistance Junction to Ambient Air  
Collector Saturation Voltage  
R
2501)  
K/W  
thJA  
at –I = 10 mA, –I = 0.5 mA  
–V  
–V  
80  
250  
300  
650  
mV  
mV  
C
B
CEsat  
CEsat  
at –I = 100 mA, –I = 5 mA  
C
B
Base Saturation Voltage  
at –I = 10 mA, –I = 0.5 mA  
–V  
–V  
700  
900  
mV  
mV  
C
B
BEsat  
BEsat  
at –I = 100 mA, –I = 5 mA  
C
B
Base-Emitter Voltage  
at –V = 5 V, I = 2 mA  
–V  
–V  
600  
660  
750  
800  
mV  
mV  
CE  
C
BE  
BE  
at –V = 5 V, I = 10 mA  
CE  
C
Collector-Emitter Cutoff Current  
at V = 80 V  
BC556  
BC557  
BC558  
BC556  
BC557  
–I  
CES  
–I  
CES  
–I  
CES  
–I  
CES  
–I  
CES  
–I  
CES  
0.2  
0.2  
0.2  
15  
15  
15  
4
4
4
nA  
nA  
nA  
CE  
at V = 50 V  
CE  
at V = 30 V  
CE  
at V = 80 V, T = 125 °C  
A
A
A
µ
µ
µ
CE  
j
at V = 50 V, T = 125 °C  
CE  
j
at V = 30 V, T = 125 °C  
BC558, BC559  
CE  
j
1) Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case.  
BC556 THRU BC559  
ELECTRICAL CHARACTERISTICS  
Ratings at  
ambient temperature unless otherwise specified  
25 °C  
Symbol  
Min.  
Typ.  
150  
Max.  
Unit  
Gain-Bandwidth Product  
at –V = 5 V, I = 10 mA, f = 100 MHz  
f
T
MHz  
CE  
C
Collector-Base Capacitance  
C
CBO  
6
pF  
at –V = 10V, f = 1 MHz  
CB  
Noise Figure  
at –V = 5 V, I = 200 A, R = 2 k ,  
µ
CE  
C
G
F
F
f = 1 kHz, f = 200 Hz BC556, BC557, BC558  
2
1
10  
4
dB  
dB  
BC559  
Noise Figure  
at –V = 5 V, I = 200 A, R = 2 k ,  
µ
CE  
C
G
F
f = 30…15000 Hz  
BC559  
1.2  
4
dB  
RATINGS AND CHARACTERISTIC CURVES BC556 THRU BC559  
RATINGS AND CHARACTERISTIC CURVES BC556 THRU BC559  
RATINGS AND CHARACTERISTIC CURVES BC556 THRU BC559  
Relative h-parameters  
versus collector current  
BC556...BC559  
102  
6
4
he (-I )  
C
he (-I = 2 mA)  
C
2
hie  
10  
6
4
2
hre  
1
6
hfe  
4
2
-V = 5 V  
hoe  
TaCmEb = 25 °C  
10-1  
10-1  
2
4
1
2
4
10 mA  
-I  
C
RATINGS AND CHARACTERISTIC CURVES BC556 THRU BC559  

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