BC558-TAP [VISHAY]
TRANSISTOR 100 mA, 65 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, PLASTIC PACKAGE-3, BIP General Purpose Small Signal;型号: | BC558-TAP |
厂家: | VISHAY |
描述: | TRANSISTOR 100 mA, 65 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, PLASTIC PACKAGE-3, BIP General Purpose Small Signal 晶体 晶体管 |
文件: | 总6页 (文件大小:255K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
BC556 THRU BC559
Small Signal Transistors (PNP)
TO-92
FEATURES
PNP Silicon Epitaxial Planar Transistors for
switching and AF amplifier applications.
.142 (3.6)
.181 (4.6)
♦
♦
These transistors are subdivided into
three groups A, B and C according to
their current gain. The type BC556 is avail-
able in groups A and B, however, the types
BC557 and BC558 can be supplied in all three
groups. The BC559 is a low-noise type available
in all three groups. As complementary types, the
NPN transistors BC546 … BC549 are recommended.
.
.022 (0.55)
.098 (2.5)
max
♦
On special request, these transistors are also manufac-
tured in the pin configuration TO-18.
E
C
MECHANICAL DATA
Case: TO-92 Plastic Package
Weight: approx. 0.18 g
B
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at
ambient temperature unless otherwise specified
25 °C
Symbol
Value
Unit
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
BC556
BC557
BC558, BC559
–V
–V
–V
80
50
30
V
V
V
CBO
CBO
CBO
BC556
BC557
BC558, BC559
–V
–V
–V
80
50
30
V
V
V
CES
CES
CES
BC556
BC557
BC558, BC559
–V
–V
–V
65
45
30
V
V
V
CEO
CEO
CEO
Emitter-Base Voltage
Collector Current
–V
5
V
EBO
–I
–I
–I
100
mA
mA
mA
mA
mW
°C
C
Peak Collector Current
Peak Base Current
Peak Emitter Current
200
CM
BM
200
I
200
EM
Power Dissipation at T
= 25 °C
P
tot
5001)
150
amb
Junction Temperature
T
T
j
Storage Temperature Range
–65 to +150
°C
S
1) Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case.
4/98
BC556 THRU BC559
ELECTRICAL CHARACTERISTICS
Ratings at
ambient temperature unless otherwise specified
25 °C
Symbol
Min.
Typ.
Max.
Unit
h-Parameters
at –V = 5 V, –I = 2 mA, f = 1 kHz
CE
C
Current Gain
Current Gain Group A
h
–
–
–
1.6
3.2
6
–
–
220
330
600
2.7
4.5
8.7
18
–
–
–
4.5
8.5
15
30
60
110
–
–
–
k
Ω
k
Ω
k
Ω
µ
µ
µ
fe
fe
B
C
h
h
h
h
h
h
h
h
fe
ie
Input Impedance
Current Gain Group A
B
C
ie
ie
S
S
S
Output Admittance
Current Gain Group A
oe
oe
oe
30
60
B
C
–
Reverse Voltage Transfer Ratio
–4
·
–
–
–
h
h
h
–
–
–
1.5 10
–
–
–
Current Gain Group A
re
re
re
–4
·
2 10
B
C
–4
·
3 10
DC Current Gain
at –V = 5 V, –I = 10 A
µ
CE
C
–
–
–
h
h
h
–
–
–
90
150
270
–
–
–
Current Gain Group A
FE
FE
FE
B
C
at –V = 5 V, –I = 2 mA
CE
C
–
–
–
h
h
h
110
200
420
180
290
500
220
450
800
Current Gain Group A
FE
FE
FE
B
C
at –V = 5 V, –I = 100 mA
–
–
–
CE
C
Current Gain Group A
h
h
h
–
–
–
120
200
400
–
–
–
FE
FE
FE
B
C
Thermal Resistance Junction to Ambient Air
Collector Saturation Voltage
R
–
–
2501)
K/W
thJA
at –I = 10 mA, –I = 0.5 mA
–V
–V
–
–
80
250
300
650
mV
mV
C
B
CEsat
CEsat
at –I = 100 mA, –I = 5 mA
C
B
Base Saturation Voltage
at –I = 10 mA, –I = 0.5 mA
–V
–V
–
–
700
900
–
–
mV
mV
C
B
BEsat
BEsat
at –I = 100 mA, –I = 5 mA
C
B
Base-Emitter Voltage
at –V = 5 V, –I = 2 mA
–V
–V
600
–
660
–
750
800
mV
mV
CE
C
BE
BE
at –V = 5 V, –I = 10 mA
CE
C
Collector-Emitter Cutoff Current
at –V = 80 V
BC556
BC557
BC558
BC556
BC557
–I
CES
–I
CES
–I
CES
–I
CES
–I
CES
–I
CES
–
–
–
–
–
–
0.2
0.2
0.2
–
–
–
15
15
15
4
4
4
nA
nA
nA
CE
at –V = 50 V
CE
at –V = 30 V
CE
at –V = 80 V, T = 125 °C
A
A
A
µ
µ
µ
CE
j
at –V = 50 V, T = 125 °C
CE
j
at –V = 30 V, T = 125 °C
BC558, BC559
CE
j
1) Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case.
BC556 THRU BC559
ELECTRICAL CHARACTERISTICS
Ratings at
ambient temperature unless otherwise specified
25 °C
Symbol
Min.
–
Typ.
150
Max.
–
Unit
Gain-Bandwidth Product
at –V = 5 V, –I = 10 mA, f = 100 MHz
f
T
MHz
CE
C
Collector-Base Capacitance
C
CBO
–
–
6
pF
at –V = 10V, f = 1 MHz
CB
Noise Figure
at –V = 5 V, –I = 200 A, R = 2 k ,
µ
Ω
CE
C
G
F
F
f = 1 kHz, f = 200 Hz BC556, BC557, BC558
–
–
2
1
10
4
dB
dB
∆
BC559
Noise Figure
at –V = 5 V, –I = 200 A, R = 2 k ,
µ
Ω
CE
C
G
F
f = 30…15000 Hz
BC559
–
1.2
4
dB
RATINGS AND CHARACTERISTIC CURVES BC556 THRU BC559
RATINGS AND CHARACTERISTIC CURVES BC556 THRU BC559
RATINGS AND CHARACTERISTIC CURVES BC556 THRU BC559
Relative h-parameters
versus collector current
BC556...BC559
102
6
4
he (-I )
C
he (-I = 2 mA)
C
2
hie
10
6
4
2
hre
1
6
hfe
4
2
-V = 5 V
hoe
TaCmEb = 25 °C
10-1
10-1
2
4
1
2
4
10 mA
-I
C
RATINGS AND CHARACTERISTIC CURVES BC556 THRU BC559
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