BC558A-TAP [VISHAY]
Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, PLASTIC PACKAGE-3;
| 型号： | BC558A-TAP |
| 厂家： | 
VISHAY |
| 描述： | Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, PLASTIC PACKAGE-3 |
| 文件： | 总9页 (文件大小：324K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BC556 to BC558
Vishay Semiconductors
Small Signal Transistors (PNP)
Features
C
1
3
• PNP Silicon Epitaxial Planar Transistors for
switching and AF amplifier applications.
2
• These transistors are subdivided into three groups
A, B, and C according to their current gain. The
type BC556 is available in groups A and B, how-
ever, the types BC557 and BC558 can be supplied
in all three groups. As complementary types, the
NPN transistors BC546...BC548 are recom-
mended.
B
3
2
1
E
18979
• On special request, these transistors are also
manufactured in the pin configuration TO-18.
Mechanical Data
Case: TO-92 Plastic case
Weight: approx. 177 mg
Packaging Codes/Options:
BULK / 5 k per container 20 k/box
TAP / 4 k per Ammopack 20 k/box
Parts Table
Part
Ordering code
BC556A-BULK or BC556A-TAP
Remarks
BC556A
BC556B
BC557A
BC557B
BC557C
BC558A
BC558B
BC558C
Bulk / Ammopack
Bulk / Ammopack
Bulk / Ammopack
Bulk / Ammopack
Bulk / Ammopack
Bulk / Ammopack
Bulk / Ammopack
Bulk / Ammopack
BC556B-BULK or BC556B-TAP
BC557A-BULK or BC557A-TAP
BC557B-BULK or BC557B-TAP
BC557C-BULK or BC557C-TAP
BC558A-BULK or BC558A-TAP
BC558B-BULK or BC558B-TAP
BC558C-BULK or BC558C-TAP
Document Number 85133
Rev. 1.2, 16-Nov-04
www.vishay.com
1
BC556 to BC558
Vishay Semiconductors
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Part
Symbol
- VCBO
Value
80
Unit
V
Collector - base voltage
BC556
BC557
BC558
BC556
BC557
BC558
BC556
BC557
BC558
- VCBO
- VCBO
- VCES
- VCES
- VCES
- VCEO
- VCEO
- VCEO
- VEBO
- IC
50
30
V
V
Collector - emitter voltage
80
V
50
V
30
V
65
V
45
V
30
V
Emitter - base voltage
Collector current
5
V
100
200
200
200
mA
mA
mA
mA
mW
Peak collector current
Peak base current
Peak emitter current
Power dissipation
- ICM
- IBM
IEM
5001)
Tamb = 25 °C
Ptot
1) Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case.
Maximum Thermal Resistance
Parameter
Test condition
Symbol
Value
2501)
Unit
Thermal resistance junction to
ambient air
RθJA
°C/W
Junction temperature
Tj
150
°C
°C
Storage temperature range
TS
- 65 to + 150
1) Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case.
Electrical DC Characteristics
Parameter
Test condition
Part
Symbol
hfe
Min
Typ
Max
Unit
Small signal current gain
(current gain group A)
- VCE = 5 V, - IC = 2 mA, f = 1 kHz
220
330
600
2.7
4.5
8.7
18
Small signal current gain
(current gain group B)
- VCE = 5 V, - IC = 2 mA, f = 1 kHz
- VCE = 5 V, - IC = 2 mA, f = 1 kHz
- VCE = 5 V, - IC = 2 mA, f = 1 kHz
- VCE = 5 V, - IC = 2 mA, f = 1 kHz
- VCE = 5 V, - IC = 2 mA, f = 1 kHz
hfe
hfe
hie
Small signal current gain
(current gain group C)
Input impedance (current gain
group A)
1.6
3.2
6
4.5
8.5
15
kΩ
kΩ
kΩ
µS
µS
µS
Input impedance (current gain
group B)
hie
Input impedance (current gain
group C)
hie
Output admittance (current gain - VCE = 5 V, - IC = 2 mA, f = 1 kHz
group A)
hoe
hoe
hoe
hre
30
Output admittance (current gain - VCE = 5 V, - IC = 2 mA, f = 1 kHz
group B)
30
60
Output admittance (current gain - VCE = 5 V, - IC = 2 mA, f = 1 kHz
group C)
60
110
1.5 x 10-4
Reverse voltage transfer ratio
(current gain group A)
- VCE = 5 V, - IC = 2 mA, f = 1 kHz
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2
Document Number 85133
Rev. 1.2, 16-Nov-04
BC556 to BC558
Vishay Semiconductors
Parameter
Test condition
Part
Symbol
hre
Min
Typ
2 x 10-4
Max
Unit
Reverse voltage transfer ratio
(current gain group B)
- VCE = 5 V, - IC = 2 mA, f = 1 kHz
3 x 10-4
90
Reverse voltage transfer ratio
(current gain group C)
- VCE = 5 V, - IC = 2 mA, f = 1 kHz
- VCE = 5 V, - IC = 10 µA
- VCE = 5 V, - IC = 10 µA
- VCE = 5 V, - IC = 10 µA
- VCE = 5 V, - IC = 2 mA
- VCE = 5 V, - IC = 2 mA
- VCE = 5 V, - IC = 2 mA
- VCE = 5 V, - IC = 100 mA
- VCE = 5 V, - IC = 100 mA
- VCE = 5 V, - IC = 100 mA
hre
hFE
hFE
hFE
hFE
hFE
hFE
hFE
hFE
hFE
DC current gain (current gain
group A)
DC current gain (current gain
group B)
150
270
180
290
500
120
200
400
DC current gain (current gain
group C)
DC current gain (current gain
group A)
110
200
420
220
450
800
DC current gain (current gain
group B)
DC current gain (current gain
group C)
DC current gain (current gain
group A)
DC current gain (current gain
group B)
DC current gain (current gain
group C)
Collector saturation voltage
Base saturation voltage
Base - voltage
- IC = 10 mA, - IB = 0.5 mA
- IC = 100 mA, - IB = 5 mA
- IC = 10 mA, - IB = 0.5 mA
- IC = 100 mA, - IB = 5 mA
- VCE = 5 V, - IC = 2 mA
- VCE = 5 V, - IC = 10 mA
VCEsat
VCEsat
VBEsat
VBEsat
VBE
80
300
650
mV
mV
mV
mV
mV
mV
nA
250
700
900
660
600
700
800
15
15
15
4
VBE
Collector-emitter cut-off current - VCE = 80 V
BC556
BC557
BC558
BC556
BC557
BC558
ICES
0.2
0.2
0.2
- VCE = 50 V
- VCE = 30 V
ICES
nA
ICES
nA
- VCE = 80 V, Tj = 125 °C
ICES
µA
- VCE = 50 V, Tj = 125 °C
- VCE = 30 V, Tj = 125 °C
ICES
4
µA
ICES
4
µA
Electrical AC Characteristics
Parameter
Test condition
- VCE = 5 V, - IC = 10 mA,
f = 100 MHz
Part
Symbol
fT
Min
Typ
150
Max
Unit
Gain bandwidth product
MHz
Collector - base capacitance
Noise figure
- VCB = 10 V, f = 1 MHz
CCBO
F
6
pF
dB
- VCE = 5 V, - IC = 200 µA,
RG = 2 kΩ, f = 1 kHz,
∆f = 200 Hz
BC556
2
10
BC557
BC558
F
F
2
2
10
10
dB
dB
Document Number 85133
Rev. 1.2, 16-Nov-04
www.vishay.com
3
BC556 to BC558
Vishay Semiconductors
Typical Characteristics (T
= 25 °C unless otherwise specified)
amb
500
400
300
200
10000
1000
100
10
1
test voltage
- V
CBO
:
equal to the given
100
0
maximum value - V
CEO
typical
maximum
0.1
0
20 40 60 80 100 120 140 160 180 200
- Ambient Temperature (°C)
0
20 40 60 80 100 120 140 160 180 200
- Ambient Temperature (°C)
19181
T
amb
T
19184
amb
Figure 1. Admissible Power Dissipation vs. Ambient Temperature
Figure 4. Collector-Base Cut-off Current vs. Ambient Temperature
100
1000
-V
CE
= 5 V
-V
CE
= 5 V
100 °C
T
= 25 °C
amb
10
1
100
- 50 °C
25 °C
10
1
T
= 100 °C
-50 °C
amb
0.1
0
0.5
- Base-Ermitter Voltage (V)
1
0.01
0.1
1
10
100
V
19185
I
- Collector Current (mA)
19183
BE
C
Figure 2. DC Current Gain vs. Collector Current
Figure 5. Collector Current vs. Base-Emitter Voltage
20
1000
T
= 25 °C
amb
0.2
100
0.1
0.05
0.02
0.01
C
EBO
10
10
C
0.005
CBO
t
p
1
t
p
T
ν
= 0
ν
=
P
I
T
0
0.1
10-6
1
10
- Reverse Bias Voltage (V)
10-5
100
10
0.1
-V
10-4 10 -3 10-2 10-1
- Pulse Length (s)
1
19186
, -V
CBO
EBO
t
19182
p
Figure 3. Pulse Thermal Resistance vs. Pulse Duration
Figure 6. Collector-Base Capacitance, Emitter-Base Capacitance
vs. Bias Voltage
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Document Number 85133
Rev. 1.2, 16-Nov-04
4
BC556 to BC558
Vishay Semiconductors
0.5
0.4
0.3
-I /-I = 2 0
B
C
0.2
T
= 100 °C
amb
25 °C
0.1
0
- 50 °C
1
10
100
0.1
19187
I
- Collector Current (mA)
C
Figure 7. Collector Saturation Voltage vs. Collector Current
100
-V
= 5 V
CE
T
= 25 °C
amb
10
1
h
ie
h
re
h
fe
h
oe
0.1
0.1
1
10
I
- Collector Current (mA)
19188
C
Figure 8. Relative h-Parameters vs. Collector Current
1000
T
= 25 °C
amb
-V
= 10 V
CE
5 V
100
2 V
10
1
0.1
10
100
19189
I
- Collector Current (mA)
C
Figure 9. Gain-Bandwidth Product vs. Collector Current
Document Number 85133
Rev. 1.2, 16-Nov-04
www.vishay.com
5
BC556 to BC558
Vishay Semiconductors
Packaging for Radial Taping
Dimensions in mm
± 2
±2.7 ±±
± ±
Vers. Dim. "H"
27 ± 0.5
FSZ
0.9 max
5.08 ± 0.7
+ 0.6
4
± 0.2
2.54
- 0.±
6.3 ± 0.7
±2.7 ± 0.2
Measure limit over 20 index - holes: ± ±
±8787
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6
Document Number 85133
Rev. 1.2, 16-Nov-04
BC556 to BC558
Vishay Semiconductors
Package Dimensions in mm (Inches)
4.6 (0.181)
3.6 (0.142)
max. 0.55 (0.022)
2.5 (0.098)
Bottom
View
18776
Document Number 85133
Rev. 1.2, 16-Nov-04
www.vishay.com
7
BC556 to BC558
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
www.vishay.com
8
Document Number 85133
Rev. 1.2, 16-Nov-04
This datasheet has been download from:
www.datasheetcatalog.com
Datasheets for electronics components.
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