BC857C-GS18 [VISHAY]
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC PACKAGE-3;
| 型号： | BC857C-GS18 |
| 厂家： | 
VISHAY |
| 描述： | Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC PACKAGE-3 |
| 文件： | 总9页 (文件大小：170K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BC856 to BC859
VISHAY
Vishay Semiconductors
Small Signal Transistors (PNP)
Features
C
3
• PNP Silicon Epitaxial Planar Transistors for
switching and AF amplifier applications.
2
1
1
• Especially suited for automatic insertion in thick
and thin-film circuits.
B
• These transistors are subdivided into three groups
A, B, and C) according to their current gain. The
type BC856 is available in groups A and B, how-
ever, the types
3
E
2
18978
BC857, BC558 and BC859 can be supplied in all
three groups. The BC849 is a low noise type.
• As complementary types, the NPN transistors
BC846...BC849 are recomended.
Packaging Codes/Options:
GS18 / 10 k per 13" reel (8 mm tape), 10 k/box
GS08 / 3 k per 7" reel (8 mm tape), 15 k/box
Pinning:
Mechanical Data
Case: SOT-23 Plastic case
Weight: approx. 8.8 mg
Marking:
1 = Base, 2 = Emitter, 3 = Collector
BC856A = 3A
BC856B = 3B
BC858A = 3J
BC858B = 3K
BC858C = 3L
BC857A = 3E
BC857B = 3F
BC857C = 3G
BC859A = 4A
BC859B = 4B
BC859C = 4C
Document Number 85135
Rev. 1.2, 08-Sep-04
www.vishay.com
1
BC856 to BC859
Vishay Semiconductors
VISHAY
Absolute Maximum Ratings
T
= 25 °C, unless otherwise specified
Parameter
amb
Test condition
Part
Symbol
Value
80
Unit
V
Collector - base voltage
BC856
- V
- V
- V
- V
- V
CBO
CBO
CBO
CBO
CES
BC857
BC858
BC859
BC856
50
30
30
80
V
V
V
V
Collector - emitter voltage
(base shorted)
BC857
BC858
BC859
BC856
- V
- V
- V
- V
50
30
30
65
V
V
V
V
CES
CES
CES
CEO
Collector - emitter voltage
(base open)
BC857
BC858
BC859
- V
- V
- V
- V
45
30
V
V
CEO
CEO
CEO
EBO
30
V
Emitter - base voltage
Collector current
5
V
- I
100
200
200
200
mA
mA
mA
mA
mW
C
CM
BM
EM
Peak colector current
Peak base current
Peak emitter current
Power dissipation
- I
- I
I
1)
T
= 25 °C
P
tot
amb
310
1)
Device on fiberglass substrate, see layout on third page.
Maximum Thermal Resistance
Parameter
Test condition
Symbol
Value
Unit
1)
Thermal resistance junction to
ambient air
R
°C/W
θJA
320
1)
Thermal resistance junction to
substrate backside
R
°C/W
θSB
450
Junction temperature
T
150
°C
°C
j
Storage temperature range
T
- 65 to + 150
S
1)
Device on fiberglass substrate, see layout on third page.
Electrical DC Characteristics
Parameter
Test condition
Part
Symbol
Min
Typ
Max
Unit
Small signal current gain
(current gain group A)
- V = 5 V, - I = 2 mA, f = 1 kHz
h
h
h
h
h
h
h
220
330
600
2.7
4.5
8.7
18
CE
C
fe
fe
fe
ie
ie
ie
Small signal current gain
(current gain group B)
- V = 5 V, - I = 2 mA, f = 1 kHz
CE C
Small signal current gain
(current gain group C)
- V = 5 V, - I = 2 mA, f = 1 kHz
CE C
Input impedance (current gain
group A)
- V = 5 V, - I = 2 mA, f = 1 kHz
1.6
3.2
6
4.5
8.5
15
kΩ
kΩ
kΩ
µS
CE
C
Input impedance (current gain
group B)
- V = 5 V, - I = 2 mA, f = 1 kHz
CE C
Input impedance (current gain
group C)
- V = 5 V, - I = 2 mA, f = 1 kHz
CE C
Output admittance (current gain - V = 5 V, - I = 2 mA, f = 1 kHz
30
CE
C
oe
group A)
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2
Document Number 85135
Rev. 1.2, 08-Sep-04
BC856 to BC859
VISHAY
Vishay Semiconductors
Parameter
Test condition
Part
Symbol
Min
Typ
30
Max
60
Unit
Output admittance (current gain - V = 5 V, - I = 2 mA, f = 1 kHz
h
µS
CE
C
oe
group B)
Output admittance (current gain - V = 5 V, - I = 2 mA, f = 1 kHz
h
60
110
µS
CE
C
oe
group C)
-4
Reverse voltage transfer ratio
(current gain group A)
- V = 5 V, - I = 2 mA, f = 1 kHz
h
h
h
CE
C
re
re
re
1.5 x 10
-4
Reverse voltage transfer ratio
(current gain group B)
- V = 5 V, - I = 2 mA, f = 1 kHz
CE C
2 x 10
-4
Reverse voltage transfer ratio
(current gain group C)
- V = 5 V, - I = 2 mA, f = 1 kHz
CE C
3 x 10
90
DC current gain (current gain
group A)
- V = 5 V, - I = 10 µA
h
h
h
h
h
h
CE
C
FE
FE
FE
FE
FE
FE
DC current gain (current gain
group B)
- V = 5 V, - I = 10 µA
150
270
180
290
520
CE
C
DC current gain (current gain
group C)
- V = 5 V, - I = 10 µA
CE C
DC current gain (current gain
group A)
- V = 5 V, - I = 2 mA
110
200
420
220
450
800
CE
C
DC current gain (current gain
group B)
- V = 5 V, - I = 2 mA
CE C
DC current gain (current gain
group C)
- V = 5 V, - I = 2 mA
CE C
Collector saturation voltage
Base saturation voltage
Base - emiter voltage
- I = 10 mA, - I = 0.5 mA
V
V
V
V
90
300
650
mV
mV
mV
mV
mV
mV
nA
nA
nA
nA
µA
µA
µA
µA
µA
µA
C
B
CEsat
CEsat
BEsat
BEsat
- I = 100 mA, - I = 5 mA
250
700
900
660
C
B
- I = 10 mA, - I = 0.5 mA
C
B
- I = 100 mA, - I = 5 mA
C
B
- V = 5 V, - I = 2 mA
V
V
600
750
820
15
15
15
15
4
CE
C
BE
BE
- V = 5 V, - I = 10 mA
CE
C
Collector-emitter cut-off current - V = 80 V
BC856
BC857
BC858
BC859
BC857
BC857
BC858
BC859
I
I
I
I
I
I
I
I
I
0.2
0.2
0.2
0.2
CE
CES
CES
CES
CES
CES
CES
CES
CES
- V = 50 V
CE
- V = 30 V
CE
- V = 80 V, T = 125 °C
CE
j
- V = 50 V, T = 125 °C
4
CE
j
- V = 30 V, T = 125 °C
4
CE
j
4
Collector-base cut-off current
- V = 30 V
15
5
CB
CBO
CBO
- V = 30 V, T = 150 °C
I
CB
j
Document Number 85135
Rev. 1.2, 08-Sep-04
www.vishay.com
3
BC856 to BC859
Vishay Semiconductors
VISHAY
Electrical AC Characteristics
Parameter
Test condition
Part
Symbol
Min
Typ
150
Max
Unit
Gain bandwidth product
- V = 5 V, - I = 10 mA,
f
T
MHz
CE
C
f = 100 MHz
Collector - base capacitance
Noise figure
- V = 10 V, f = 1 MHz
C
6
pF
dB
CB
CBO
- V = 5 V, - I = 200 µA,
BC856
F
2
10
CE
C
R
= 2 kΩ, f = 1 kHz,
G
∆f = 200 Hz
BC857
BC858
BC859
BC859
F
F
F
F
2
2
10
10
4
dB
dB
dB
dB
1
- V = 5 V, - I = 200 µA,
1.2
4
CE
C
R
= 2 kΩ,
G
f = (30 to 15000) Hz
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4
Document Number 85135
Rev. 1.2, 08-Sep-04
BC856 to BC859
VISHAY
Vishay Semiconductors
Layout for R
test
thJA
Thickness: Fiberglass 1.5 mm (0.059 in.)
Copper leads 0.3 mm (0.012 in.)
7.5 (0.3)
3 (0.12)
1 (0.4)
2 (0.8)
2 (0.8)
1 (0.4)
12 (0.47)
0.8 (0.03)
15 (0.59)
5 (0.2)
1.5 (0.06)
5.1 (0.2)
17451
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
mW
500
10
0.5
400
0.2
0.1
-1
10
P
0.05
300
200
100
tot
r
thSB
0.02
0.01
R
thSB
-2
10
t
0.005
= 0
p
t
p
T
ν
=
P
I
ν
T
-3
0
10
10-7
10-5
10-3
10-1
1s
10-6
10-4
10-2
p
0
200 °C
100
T
19191
19195
t
SB
Figure 1. Admissible Power Dissipation vs. Temperature of
Substrate Backside
Figure 2. Pulse Thermal Resistance vs. Pulse Duration
(normalized)
Document Number 85135
Rev. 1.2, 08-Sep-04
www.vishay.com
5
BC856 to BC859
Vishay Semiconductors
VISHAY
V
103
-V
CE
= 5 V
0.5
-I /-I = 20
B
C
100 °C
0.4
h
T
= 25 °C
FE
amb
102
10
1
- 50 °C
0.3
CEsat
-V
0.2
T
= 100 °C
amb
25 °C
0.1
0
-50 °C
102mA
10-1
1
10-2
10
102
10-1
1
10
-I
19187
C
-I
19183
C
Figure 3. DC Current Gain vs. Collector Current
Figure 6. Collector Saturation Voltage vs. Collector Current
nA
pF
20
104
103
T
= 25 °C
amb
-I
CBO
C
C
CBO
EBO
102
10
C
EBO
10
C
test voltage - V
:
CBO
CBO
equal to the given
maximum value - V
1
CEO
typical
maximum
-1
10
100
200 °C
0
0
10 V
1
0.1
T
19184
j
-V
-V
CBO,
EBO
19186
Figure 4. Collector-Base Cutoff Curent vs. Ambient Temperature
Figure 7. Collector Base Capacitance, Emitter base Capacitance
vs. Bias Voltage
mA
2
2
10
-V
CE
amb
= 5 V
= 25 °C
10
-V = 5 V
CE
T
T
= 25 °C
amb
10
10
1
-I
C
h
ie
h
re
1
h
fe
h
oe
-1
10
-1
10
-1
0.5
0
1 V
10
1
10 mA
-V
19188
-I
19197
BE
C
Figure 5. Collector Current vs. Base-Emitter Voltage
Figure 8. Relative h-Parameters vs. Collector Current
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6
Document Number 85135
Rev. 1.2, 08-Sep-04
BC856 to BC859
VISHAY
Vishay Semiconductors
dB
20
MHz
10
3
-I = 0.2 mA
f = 1 kHz
C
T
= 25 °C
18
16
amb
R
= 2 kΩ
= 25 °C
G
T
amb
14
12
-V = 10 V
CE
f
r
5 V
2 V
2
F
10
8
10
6
4
2
10
0
10
10
1
100 mA
1
100 mA
0.1
0.1
-V
-I
19201
19198
CE
C
Figure 9. Gain-Bandwidth Product vs. Collector Current
Figure 12. Noise Figure vs. Collector Emitter Voltage
dB
20
-V
CE
f = 120 Hz
= 5 V
18
16
R
= 1 MΩ
100 kΩ
1kΩ
10 kΩ
G
14
12
500 Ω
F
10
8
6
4
2
T
= 25 °C
amb
0
-3
-2
10
-1
10 mA
1
10
10
-I
19199
C
Figure 10. Noise Figure vs. Collector Current
dB
20
-V
CE
f = 120 Hz
= 5 V
18
16
T
= 25 °C
amb
14
12
100 kΩ
R
= 1 MΩ
10 kΩ
F
G
10
8
1kΩ
6
4
2
0
500 Ω
-3
10
-2
10
-1
10
10 mA
1
-I
19200
C
Figure 11. Noise Figure vs. Collector Current
Document Number 85135
Rev. 1.2, 08-Sep-04
www.vishay.com
7
BC856 to BC859
Vishay Semiconductors
VISHAY
Package Dimensions in mm (Inches)
0.175 (.007)
0.098 (.005)
0.1 (.004) max.
2.6 (.102)
2.35 (.092)
0.4 (.016)
0.4 (.016)
ISO Method E
3.1 (.122)
Mounting Pad Layout
2.8 (.110)
0.4 (.016)
0.52 (0.020)
3
0.9 (0.035)
2.0 (0.079)
1
2
0.95 (.037)
0.95 (.037)
0.95 (0.037)
0.95 (0.037)
17418
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8
Document Number 85135
Rev. 1.2, 08-Sep-04
BC856 to BC859
VISHAY
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the
use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Document Number 85135
Rev. 1.2, 08-Sep-04
www.vishay.com
9
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