BCW60D [VISHAY]
Small Signal Transistors (PNP); 小信号晶体管（ PNP ）
| 型号： | BCW60D |
| 厂家： | 
VISHAY |
| 描述： | Small Signal Transistors (PNP) |
| 文件： | 总3页 (文件大小：34K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BCW61 Series
New Product
Vishay Semiconductors
formerly General Semiconductor
Small Signal Transistors (PNP)
TO-236AB (SOT-23)
.122 (3.1)
.110 (2.8)
.016 (0.4)
Top View
Mounting Pad Layout
3
0.031 (0.8)
Pin Configuration
1. Base 2. Emitter
3. Collector
0.035 (0.9)
1
2
0.079 (2.0)
.037(0.95)
.037(0.95)
0.037 (0.95)
0.037 (0.95)
.102 (2.6)
.094 (2.4)
.016 (0.4) .016 (0.4)
Mechanical Data
Dimensions in inches and (millimeters)
Case: SOT-23 Plastic Package
Weight: approx. 0.008g
Features
Marking
Code:
BCW61A = BA
BCW61B = BB
BCW61C = BC
BCW61D = BD
• PNP Silicon Epitaxial Planar Transistors
• Suited for low level, low noise, low
frequency applications in hybrid cicuits.
• Low Current, Low Voltage.
Packaging Codes/Options:
E8/10K per 13” reel (8mm tape), 30K/box
E9/3K per 7” reel (8mm tape), 30K/box
• As complementary types, BCW60 Series NPN
transistors are recommended.
Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
Parameter
Symbol
–VCES
–VCEO
–VEBO
–IC
Value
Unit
Collector-Emitter Voltage (VBE = 0)
Collector-Emitter Voltage
Emitter-Base Voltage
32
V
32
V
5.0
V
Collector Current (DC)
100
mA
mA
mA
mW
°C
Peak Collector Current
–ICM
–IB
200
Base Current (DC)
50
Power Dissipation
Ptot
250
Maximum Junction Temperature
Storage Temperature Range
Thermal Resistance, Junction to Ambient Air
Tj
150
TSTG
RθJA
–65 to +150
500(1)
°C
°C/W
Note:
(1) Mounted on FR-4 printed-ciruit board.
Document Number 88171
09-May-02
www.vishay.com
1
BCW61 Series
Vishay Semiconductors
formerly General Semiconductor
Electrical Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
Symbol
Min.
TYP.
Max.
Unit
DC Current Gain
at –VCE = 5 V, –IC = 10 µA
at –VCE = 5 V, –IC = 10 µA
at –VCE = 5 V, –IC = 10 µA
at –VCE = 5 V, –IC = 10 µA
BCW61A
BCW61B
BCW61C
BCW61D
hFE
hFE
hFE
hFE
–
30
40
100
–
–
–
–
–
–
–
–
–
–
–
–
at –VCE = 5 V, –IC = 2 mA
at –VCE = 5 V, –IC = 2 mA
at –VCE = 5 V, –IC = 2 mA
at –VCE = 5 V, –IC = 2 mA
BCW61A
BCW61B
BCW61C
BCW61D
hFE
hFE
hFE
hFE
120
180
250
380
–
–
–
–
220
310
460
630
–
–
–
–
at –VCE = 1 V, –IC = 50 mA
at –VCE = 1 V, –IC = 50 mA
at –VCE = 1 V, –IC = 50 mA
at –VCE = 1 V, –IC = 50 mA
BCW61A
BCW61B
BCW61C
BCW61D
hFE
hFE
hFE
hFE
60
80
100
110
–
–
–
–
–
–
–
–
–
–
–
–
Collector-Emitter Saturation Voltage
at –IC = 10 mA, –IB = 0.25 mA
at –IC = 50 mA, –IB = 1.25 mA
–VCEsat
–VCEsat
60
120
–
–
250
550
mV
mV
Base-Emitter Saturation Voltage
at –IC = 10 mA, –IB = 0.25 mA
at –IC = 50 mA, –IB = 1.25 mA
–VBEsat
–VBEsat
600
680
–
–
850
1050
mV
mV
Base-Emitter Voltage
at –VCE = 5 V, –IC = 2 mA
at –VCE = 5 V, –IC = 10 µA
at –VCE = 1 V, –IC = 50 mA
–VBE
–VBE
–VBE
600
–
–
650
550
720
750
–
–
mV
mV
mV
Collector-Emiter Cut-off Current
at –VCE = 32 V, VEB=0
at –VCE = 32 V, VEB=0, TA = 150°C
–ICES
–
–
–
–
20
20
nA
µA
Emitter-Base Cut-off Current
at –VEB = 4 V, IC=0
–IEBO
fT
–
100
–
–
–
20
–
nA
MHz
pF
Gain-Bandwidth Product
at –VCE = 5 V, –IC = 10 mA, f = 100 MHz
Collector-Base Capacitance
at –VCB = 10 V, f = 1 MHZ, IE=0
CCBO
CEBO
F
4.5
11
2
–
Emitter-Base Capacitance
at –VEB = 0.5 V, f = 1 MHZ, IC=0
–
–
pF
Noise Figure
–
6
dB
at –V = 5 V, –I = 200 µA, R = 2 kΩ, f = 100 kH , B = 200Hz
CE
C
S
Z
Small Signal Current Gain
at –VCE = 5V, –IC = 2 mA, f = 1.0 kHZ
BCW60A
BCW60B
BCW60C
BCW60D
–
–
–
–
200
260
330
520
hfe
Turn-on Time at RL = 990Ω (see fig. 1)
– VCC = 10V, –Ic = 10mA, –IB(on) = IB(off) = 1mA
ton
toff
–
–
85
150
800
ns
ns
Turn-off Time at RL = 990Ω (see fig. 1)
– VCC = 10V, –Ic = 10mA, –IB(on) = IB(off) = 1mA
480
www.vishay.com
2
Document Number 88171
09-May-02
BCW61 Series
Vishay Semiconductors
formerly General Semiconductor
Fig. 1 - Switching Waveforms
10%
90%
INPUT
t
t
on
off
10%
90%
OUTPUT
10%
90%
t
t
t
t
d
s
r
f
Document Number 88171
09-May-02
www.vishay.com
3
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