BCX70H [VISHAY]
Small Signal Transistor (NPN); 小信号晶体管（ NPN ）
| 型号： | BCX70H |
| 厂家： | 
VISHAY |
| 描述： | Small Signal Transistor (NPN) |
| 文件： | 总3页 (文件大小：59K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BCX70 Series
Small Signal Transistor (NPN)
TO-236AB (SOT-23)
.122 (3.1)
.110 (2.8)
.016 (0.4)
Top View
3
Mounting Pad Layout
0.037 (0.95)
0.037 (0.95)
Pin Configuration
1 = Base 2 = Emitter
3 = Collector
1
2
0.079 (2.0)
.037(0.95)
.037(0.95)
0.035 (0.9)
0.031 (0.8)
.102 (2.6)
.094 (2.4)
.016 (0.4) .016 (0.4)
Dimensions in inches and (millimeters)
Mechanical Data
Features
Case: SOT-23 Plastic Package
• NPN Silicon Epitaxial Planar Transistors for
switching and AF amplifier applications.
Weight: approx. 0.008g
• Suited for low level, low noise, low frequency
applications in hybrid circuits.
• Low current, low voltage.
• As complementary types, BCX71 Series PNP
transistors are recommended.
Marking
Code:
BCX70G = AG
BCX70H = AH
BCX70J = AJ
BCX70K = AK
Packaging Codes/Options:
E8/10K per 13” reel (8mm tape), 30K/box
E9/3K per 7” reel (8mm tape), 30K/box
Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
Parameter
Symbol
VCBO
VCEO
VEBO
IC
Value
Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
45
V
45
V
5.0
V
Collector Current
200
mA
mA
mW
°C/W
°C
Peak Base Current
IB
50
Power Dissipation
Ptot
250
Thermal Resistance Junction to Ambient Air
Junction Temperature
RΘJA
Tj
500(1)
150
Storage Temperature Range
Note: (1) Mounted on FR-4 printed-circuit board.
TS
–65 to +150
°C
11/10/00
BCX70 Series
Small Signal Transistor (NPN)
Electrical Characteristics(TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
BCX70G
BCX70H
BCX70J
BCX70K
BCX70G
BCX70H
BCX70J
BCX70K
BCX70G
BCX70H
BCX70J
BCX70K
VCE = 5 V, IC = 10 µA
—
30
40
100
120
180
250
380
50
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
V
V
V
CE = 5 V, IC = 10 µA
CE = 5 V, IC = 10 µA
CE = 5 V, IC = 10 µA
—
V
CE = 5 V, IC = 2 mA
VCE = 5 V, IC = 2 mA
220
310
460
630
—
—
—
—
DC Current Gain
hFE
—
V
V
CE = 5 V, IC = 2 mA
CE = 5 V, IC = 2 mA
VCE = 1 V, IC = 50 mA
VCE = 1 V, IC = 50 mA
VCE = 1 V, IC = 50 mA
70
90
100
VCE = 1 V, IC = 50 mA
IC = 10 mA, IB = 0.25 mA
IC = 50 mA, IB = 1.25 mA
50
100
—
—
350
550
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
VCEsat
VBEsat
mV
mV
IC = 10 mA, IB = 0.25 mA
IC = 50 mA, IB = 1.25 mA
600
700
—
—
850
1050
VCE = 5 V, IC = 2 mA
VCE = 5 V, IC = 10 µA
VCE = 1 V, IC = 50 mA
550
—
—
650
520
780
750
—
—
Base-Emitter Voltage
VBE
mV
VCB = 45 V, VBE = 0 V
VCB = 45 V, VBE = 0 V
TA = 150°C
—
—
—
—
20
20
nA
Collector Cut-off Current
ICBO
µA
Emitter Cut-off Current
Gain-Bandwidth Product
IEBO
fT
VEB = 4 V, IC = 0
—
—
20
—
nA
VCE = 5 V, IC = 10 mA
f = 100 MHz
100
250
MHz
Collector-Base Capacitance
Emitter-Base Capacitance
CCBO VCB = 10 V, f = 1 MHz, IE = 0
CEBO VEB = 0.5 V, f = 1 MHz, IC = 0
VCE = 5 V, IC = 200 µA,
—
—
2.5
8
—
—
pF
pF
Noise Figure
F
RS = 2 kΩ, f = 1 kHz,
—
2
6
dB
B = 200 Hz
BCX70G
—
—
—
—
200
260
330
520
BCX70H
BCX70J
BCX70K
VCE = 5 V, IC = 2 mA,
f = 1.0 kHZ
Small Signal Current Gain
hfe
VCC = 10 V, IC = 10 mA,
IB(on) = -IB(off) = 1 mA
Turn-on Time at RL = 990Ω (see fig. 1)
Turn-off Time at RL = 990Ω (see fig. 1)
ton
toff
—
—
85
150
800
ns
ns
VCC = 10 V, IC = 10 mA,
IB(on) = -IB(off) = 1 mA
480
BCX70 Series
Small Signal Transistor (NPN)
Ratings and Characteristic Curves
Fig. 1 Switching Waveforms
INPUT
90%
10%
t
t
off
on
10%
90%
90%
10%
OUTPUT
t
t
t
t
r
s
f
d
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