BF421 [VISHAY]
Small Signal Transistors (PNP); 小信号晶体管（ PNP ）
| 型号： | BF421 |
| 厂家： | 
VISHAY |
| 描述： | Small Signal Transistors (PNP) |
| 文件： | 总2页 (文件大小：42K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BF421, BF423
Small Signal Transistors (PNP)
TO-92
FEATURES
.142 (3.6)
.181 (4.6)
♦
♦
PNP Silicon Epitaxial Transistors
especially suited for application in
class-B video output stages of TV
receivers and monitors.
As complementary types, the NPN tran-
sistors BF420 and BF422 are recom-
mended.
.
.022 (0.55)
.098 (2.5)
max
B
E
MECHANICAL DATA
Case: TO-92 Plastic Package
Weight: approx. 0.18 g
C
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at
ambient temperature unless otherwise specified
25 °C
Symbol
Value
Unit
Collector-Base Voltage
BF421
BF423
–V
–V
300
250
V
V
CBO
CBO
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
BF423
BF421
–V
–V
–V
250
V
CEO
CER
EBO
300
V
5
V
–I
–I
P
50
mA
mA
mW
°C
°C
C
Peak Collector Current
100
CM
Power Dissipation at T
= 25 °C
8301)
amb
tot
Junction Temperature
T
T
150
j
Storage Temperature Range
–65 to +150
S
1) Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case.
4/98
BF421, BF423
ELECTRICAL CHARACTERISTICS
Ratings at
ambient temperature unless otherwise specified
25 °C
Symbol
Min.
Typ.
Max.
Unit
Collector-Base Breakdown Voltage
at –I = 100 A, I = 0
BF421
BF423
–V
–V
300
250
–
–
–
–
V
V
(BR)CBO
(BR)CBO
µ
C
E
Collector-Emitter Breakdown Voltage BF423
at –I = 10 mA, I = 0
–V
–V
–V
250
300
5
–
–
–
–
–
V
(BR)CEO
(BR)CER
(BR)EBO
CBO
C
B
Collector-Emitter Breakdown Voltage BF421
at R = 2.7 k , at –I = 10 mA
–
V
Ω
BE
C
Emitter-Base Breakdown Voltage
at –I = 100 A, I = 0
–
V
µ
E
C
Collector-Base Cutoff Current
at –V = 200 V, I = 0
–I
–
10
nA
CB
E
Collector-Emitter Cutoff Current
at R = 2.7 k , –V = 250 V
–I
CER
–I
CER
50
10
nA
A
µ
Ω
BE
CE
at R = 2.7 k , –V = 200 V, T = 150 °C
Ω
BE
CE
j
Collector Saturation Voltage
–V
–
–
–
–
–
–
0.8
V
CEsat
at –I = 30 mA, –I = 5 mA
C
B
DC Current Gain
h
50
60
–
–
–
FE
at –V = 20 V, –I = 25 mA
CE
C
Gain-Bandwidth Product
at –V = 10 V, –I = 10 mA
f
T
–
MHz
pF
K/W
CE
C
Feedback Capacitance
at –V = 30 V, –I = 0, f = 1 MHz
C
1.6
1501)
re
CE
C
Thermal Resistance Junction to Ambient Air
R
–
thJA
1) Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case.
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