BF823 [VISHAY]
Small Signal Transistors (PNP); 小信号晶体管（ PNP ）
| 型号： | BF823 |
| 厂家： | 
VISHAY |
| 描述： | Small Signal Transistors (PNP) |
| 文件： | 总2页 (文件大小：52K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BF821, BF823
Small Signal Transistors (PNP)
SOT-23
FEATURES
♦
PNP Silicon Epitaxial Planar Transistors
especially suited for application in class-
B video output stages of TV receivers
and monitors.
.122 (3.1)
.118 (3.0)
.016 (0.4)
Top View
3
♦
As complementary types, the NPN tran-
sistors BF820 and BF822 are recommended.
1
2
.037(0.95)
.037(0.95)
.102 (2.6)
.094 (2.4)
MECHANICAL DATA
.016 (0.4) .016 (0.4)
Case: SOT-23 Plastic Package
Weight: approx. 0.008 g
Marking code
Dimensions in inches and (millimeters)
BF821 = 1W
BF823 = 1Y
Pin configuration
1 = Base, 2 = Emitter, 3 = Collector.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at
ambient temperature unless otherwise specified
25 °C
Symbol
Value
Unit
Collector-Base Voltage
BF821
BF823
–V
–V
300
250
V
V
CBO
CBO
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
BF823
BF821
–V
–V
–V
250
V
CEO
CER
EBO
300
V
5
V
–I
–I
P
50
mA
mA
mW
°C
°C
C
Peak Collector Current
100
CM
Power Dissipation at T = 50 °C
3001)
SB
tot
Junction Temperature
T
T
150
j
Storage Temperature Range
1) Device on fiberglass substrate, see layout
–65 to +150
S
4/98
BF821, BF823
ELECTRICAL CHARACTERISTICS
Ratings at
ambient temperature unless otherwise specified
25 °C
Symbol
Min.
Typ.
Max.
Unit
Collector-Base Breakdown Voltage
at –I = 100 A, I = 0
BF821
BF823
–V
–V
300
250
–
–
–
–
V
V
(BR)CBO
(BR)CBO
µ
C
E
Collector-Emitter Breakdown Voltage BF823
at –I = 10 mA, I = 0
–V
–V
–V
250
300
5
–
–
–
–
–
V
(BR)CEO
(BR)CER
(BR)EBO
CBO
C
B
Collector-Emitter Breakdown Voltage BF821
at R = 2.7 k , –I = 10 mA
–
V
Ω
BE
C
Emitter-Base Breakdown Voltage
at –I = 100 A, I = 0
–
V
µ
E
C
Collector-Base Cutoff Current
at –V = 200 V, I = 0
–I
–
10
nA
CB
E
Collector-Emitter Cutoff Current
at R = 2.7 k , –V = 250 V
–I
CER
–I
CER
50
10
nA
Ω
BE
CE
at R = 2.7 k , –V = 200 V, T = 150 °C
A
Ω
µ
BE
CE
j
Collector Saturation Voltage
–V
–
–
–
–
–
–
0.8
V
CEsat
at –I = 30 mA, –I = 5 mA
C
B
DC Current Gain
h
50
60
–
–
–
FE
at –V = 20 V, –I = 25 mA
CE
C
Gain-Bandwidth Product
at –V = 10 V, –I = 10 mA
f
–
MHz
pF
K/W
T
CE
C
Feedback Capacitance
at –V = 30 V, –I = 0, f = 1 MHz
C
1.6
4301)
re
CE
C
Thermal Resistance Junction to Ambient Air
1) Device on fiberglass substrate, see layout
R
–
thJA
.30 (7.5)
.12 (3)
.04 (1)
.08 (2)
.04 (1)
.08 (2)
.59 (15)
.03 (0.8)
0.2 (5)
.47 (12)
.06 (1.5)
.20 (5.1)
Dimensions in inches (millimeters)
Layout for R
test
th J A
Thickness: Fiberglass 0.059 in (1.5 mm)
Copper leads 0.012 in (0.3 mm)
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