概述
规格参数
数据手册BF970 概述
Silicon PNP Planar RF Transistor PNP硅平面晶体管RF 其他晶体管
BF970 规格参数
| 生命周期： | Obsolete | 包装说明： | , |
| Reach Compliance Code： | unknown | 风险等级： | 5.59 |
| 最大集电极电流 (IC)： | 0.03 A | 配置： | Single |
| 最小直流电流增益 (hFE)： | 25 | 最高工作温度： | 150 °C |
| 极性/信道类型： | PNP | 最大功率耗散 (Abs)： | 0.16 W |
| 子类别： | Other Transistors | 表面贴装： | YES |
| 标称过渡频率 (fT)： | 950 MHz | Base Number Matches： | 1 |
BF970 数据手册
通过下载BF970数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。
PDF下载BF970
Vishay Telefunken
Silicon PNP Planar RF Transistor
Electrostatic sensitive device.
Observe precautions for handling.
Applications
UHF oscillator and mixer stages.
Features
High gain
Low noise
3
2
94 9308
13623
1
BF970 Marking: BF970
Plastic case (TO 50)
1 = Collector, 2 = Base, 3 = Emitter
Absolute Maximum Ratings
T
amb
= 25 C, unless otherwise specified
Parameter
Test Conditions
Symbol
Value
40
35
3
30
Unit
V
V
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature range
–V
–V
–V
CBO
CEO
EBO
V
–I
C
mA
mW
C
T
amb
≤ 60 C
P
tot
300
150
–55 to +150
T
j
T
stg
C
Maximum Thermal Resistance
T
amb
= 25 C, unless otherwise specified
Parameter
Test Conditions
Symbol
R
thJA
Value
300
Unit
K/W
3
Junction ambient on glass fibre printed board (40 x 25 x 1.5) mm
plated with 35 m Cu
Document Number 85005
Rev. 3, 20-Jan-99
www.vishay.de • FaxBack +1-408-970-5600
1 (5)
BF970
Vishay Telefunken
Electrical DC Characteristics
T
amb
= 25 C, unless otherwise specified
Parameter
Collector cut-off current
Collector-base cut-off current
Emitter-base cut-off current
Collector-emitter breakdown voltage –I = 1 mA, I = 0
Test Conditions
–V = 40 V, V = 0
Symbol Min Typ Max Unit
–I
–I
–I
100
100 nA
10
90
A
CE
BE
CES
CBO
EBO
–V = 20 V, I = 0
CB
E
–V = 2 V, I = 0
A
EB
C
–V
(BR)CEO
35
V
C
B
DC forward current transfer ratio
–V = 10 V, –I = 3 mA
h
FE
25 50
CE
C
Electrical AC Characteristics
T
amb
= 25 C, unless otherwise specified
Parameter
Test Conditions
Sym- Min
bol
Typ Max Unit
Transition frequency
Collector-base capacitance –V = 10 V, f = 1 MHz
–V = 10 V, –I = 3 mA, f = 300 MHz
f
T
1000
0.4
MHz
pF
CE
C
C
cb
CB
Noise figure
–V = 10 V, –I = 3 mA, Z = 50
,
F
4.2
5.0
dB
CE
C
S
f = 800 MHz
Power gain
–V = 10 V, –I = 3 mA, Z = 500
f = 800 MHz
G
13
14.5
5
dB
CE
C
L
pb
Collector current for G
–V = 10 V, Z = 500
f = 800 MHz
–I
C
mA
pbmax
CE
L
www.vishay.de • FaxBack +1-408-970-5600
Document Number 85005
Rev. 3, 20-Jan-99
2 (5)
BF970
Vishay Telefunken
Typical Characteristics (Tamb = 25 C unless otherwise specified)
400
350
300
250
200
150
100
50
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0
0
20 40 60 80 100 120 140 160
– Ambient Temperature ( °C )
0
2
4
6
8
10 12 14 16 18 20
12845
T
amb
12846
V
– Collector Base Voltage ( V )
CB
Figure 3. Collector Base Capacitance vs.
Collector Base Voltage
Figure 1. Total Power Dissipation vs.
Ambient Temperature
1200
1000
800
600
400
200
0
–V =10V
f=300MHz
CB
0
3
6
9
12
15
12847
–I – Collector Current ( mA )
C
Figure 2. Transition Frequency vs. Collector Current
Document Number 85005
Rev. 3, 20-Jan-99
www.vishay.de • FaxBack +1-408-970-5600
3 (5)
BF970
Vishay Telefunken
Dimensions of BF970 in mm
96 12243
www.vishay.de • FaxBack +1-408-970-5600
Document Number 85005
Rev. 3, 20-Jan-99
4 (5)
BF970
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Document Number 85005
Rev. 3, 20-Jan-99
www.vishay.de • FaxBack +1-408-970-5600
5 (5)
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