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BF995B-GS18 [VISHAY]

RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET,;

BF995B-GS18


元器件型号：	BF995B-GS18
生产厂家：	VISHAY TELEFUNKEN
描述和应用：	RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, 放大器光电二极管晶体管
PDF文件：	总6页 (文件大小：179K)
下载文档：	下载PDF数据表文档文件
型号参数：BF995B-GS18参数

BF995E6327

RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, SOT-143, 4 PIN

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0 INFINEON

BF996

TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 30MA I(D) | SOT-143

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81 ETC

BF996S

N-channel dual-gate MOS-FET

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89 PHILIPS

BF996S

N.Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode

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59 VISHAY

BF996S

Silicon N Channel MOSFET Tetrode (For input stages in UHF TV tuners High transconductance Low noise figure)

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54 INFINEON

BF996S

N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode

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43 TEMIC

BF996S

N.Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode

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27 VISHAY

BF996S

RF Manual 16th edition

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31 PHILIPS

BF996S_15

N-channel dual-gate MOS-FET

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0 JMNIC

BF996S_2015

N-channel dual-gate MOS-FET

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1 JMNIC

BF996SA

N.Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode

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24 VISHAY

BF996SA

N.Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode

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29 VISHAY

BF996SA-GS08

RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET,

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0 TEMIC

BF996SA-GS18

RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET,

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0 TEMIC

BF996SB

N.Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode

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27 VISHAY

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