BF998A [VISHAY]

N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode; N沟道双栅MOS -场效应四极管,耗尽型
BF998A
元器件型号: BF998A
生产厂家: VISHAY TELEFUNKEN    VISHAY TELEFUNKEN
描述和应用:

N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
N沟道双栅MOS -场效应四极管,耗尽型

晶体 小信号场效应晶体管 射频小信号场效应晶体管 光电二极管 栅 放大器
PDF文件: 总10页 (文件大小:319K)
下载文档:  下载PDF数据表文档文件
型号参数:BF998A参数

BF998A-GS08

N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode

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38 VISHAY

BF998A-GS08

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

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0 VISHAY

BF998A-GS18

RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, PLASTIC PACKAGE-4

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0 VISHAY

BF998B

N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode

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29 VISHAY

BF998B

N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode

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39 VISHAY

BF998B

RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET,

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3 TEMIC

BF998B-GS08

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

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0 VISHAY

BF998B-GS18

RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, PLASTIC PACKAGE-4

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0 VISHAY

BF998E6327

RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, SOT-143, 4 PIN

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1 INFINEON

BF998E6327

UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, SOT-143, 4 PIN

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2 ROCHESTER

BF998E6327HTSA1

RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, SOT-143, 4 PIN

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0 INFINEON

BF998R

Silicon N-Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor)

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112 INFINEON

BF998R

Silicon N-channel dual-gate MOS-FETs

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437 PHILIPS

BF998R

N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode

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95 VISHAY

BF998R

Silicon N-Channel MOSFET Tetrode

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127 INFINEON