BF998R-GS18 [VISHAY]
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET;
| 型号： | BF998R-GS18 |
| 厂家： | 
VISHAY |
| 描述： | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET |
| 文件： | 总8页 (文件大小：252K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BF998 / BF998R / BF998RW
VISHAY
Vishay Semiconductors
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
2
1
Features
• Integrated gate protection diodes
SOT-143
• Low noise figure
3
4
• Low feedback capacitance
• High cross modulation performance
• Low input capacitance
• High AGC-range
2
1
SOT-143R
SOT-343R
• High gain
4
3
2
1
Applications
Input and mixer stages in UHF tuners.
4
3
Mechanical Data
Typ: BF998
Case: SOT-143 Plastic case
Weight: approx. 8.0 mg
Marking: MO
19216
Electrostatic sensitive device.
Observe precautions for handling.
Pinning:
Typ: BF998RW
1 = Source, 2 = Drain,
3 = Gate 2, 4 = Gate 1
Typ: BF998R
Case: SOT-343R Plastic case
Weight: approx. 6.0 mg
Marking: WMO
Case: SOT-143R Plastic case
Weight: approx. 8.0 mg
Marking: MOR
Pinning:
1 = Source, 2 = Drain,
3 = Gate 2, 4 = Gate 1
Pinning:
1 = Source, 2 = Drain,
3 = Gate 2, 4 = Gate 1
Absolute Maximum Ratings
T
= 25 °C, unless otherwise specified
Parameter
amb
Test condition
Symbol
Value
12
Unit
V
Drain - source voltage
Drain current
V
DS
I
30
10
mA
mA
D
Gate 1/Gate 2 - source peak
current
I
G1/G2SM
Gate 1/Gate 2 - source voltage
Total power dissipation
V
7
200
V
mW
°C
G1S/G2S
T
≤ 60 °C
P
amb
tot
Ch
stg
Channel temperature
T
T
150
Storage temperature range
- 65 to + 150
°C
Document Number 85011
Rev. 1.5, 31-Aug-04
www.vishay.com
1
BF998 / BF998R / BF998RW
Vishay Semiconductors
VISHAY
Maximum Thermal Resistance
Parameter
Test condition
Symbol
Value
450
Unit
K/W
1)
Channel ambient
R
thChA
1)
3
on glass fibre printed board (25 x 20 x 1.5) mm plated with 35 µm Cu
Electrical DC Characteristics
T
= 25 °C, unless otherwise specified
Parameter
amb
Test condition
Part
Symbol
Min
12
Typ.
Max
Unit
V
Drain - source breakdown
I
= 10 µA, - V
= - V
= 4 V
V
D
G1S
G2S
(BR)DS
voltage
Gate 1 - source breakdown
voltage
I
I
= 10 mA, V
= V = 0
V
V
7
7
14
14
V
V
G1S
G2S
G2S
G1S
DS
(BR)G1SS
(BR)G2SS
Gate 2 - source breakdown
voltage
= 10 mA, V
= V = 0
DS
Gate 1 - source leakage current
Gate 2 - source leakage current
Drain current
V
V
= 5 V, V
= 5 V, V
= V = 0
I
I
50
50
18
nA
nA
G1S
G2S
DS
G1SS
= V = 0
G2S
G1S
DS
G2SS
V
= 8 V, V
= 0, V
= 4 V
BF998/
BF998R/
BF998RW
I
I
I
4
4
mA
DS
G1S
G2S
DSS
DSS
DSS
BF998A/
BF998RA/
BF998RAW
10.5
18
mA
mA
BF998B/
BF998RB/
BF998RBW
9.5
Gate 1 - source cut-off voltage
Gate 2 - source cut-off voltage
V
V
= 8 V, V
= 4 V, I = 20 µA
- V
1.0
0.6
2.0
1.0
V
V
DS
DS
G2S
D
G1S(OFF)
- V
G2S(OFF)
= 8 V, V
= 0, I = 20 µA
G1S
D
Electrical AC Characteristics
T
= 25 °C, unless otherwise specified
amb
V
= 8 V, I = 10 mA, V
= 4 V, f = 1 MHz
DS
D
G2S
Parameter
Test condition
Symbol
Min
21
Typ.
24
Max
Unit
Forward transadmittance
Gate 1 input capacitance
Gate 2 input capacitance
Feedback capacitance
Output capacitance
Power gain
|y
|
mS
pF
pF
fF
21s
C
C
2.1
1.1
25
2.5
issg1
issg2
V
= 0, V
= 4 V
G1S
G2S
C
rss
C
1.05
28
pF
dB
oss
G
= 2 mS, G = 0.5 mS,
G
S
L
ps
f = 200 MHz
= 3,3 mS, G = 1 mS,
G
G
16.5
40
20
dB
S
L
ps
f = 800 MHz
= 4 to -2 V, f = 800 MHz
AGC range
Noise figure
V
∆G
dB
dB
G2S
ps
G
= 2 mS, G = 0.5 mS,
F
1.0
1.5
S
L
f = 200 MHz
= 3,3 mS, G = 1 mS,
G
F
dB
S
L
f = 800 MHz
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2
Document Number 85011
Rev. 1.5, 31-Aug-04
BF998 / BF998R / BF998RW
VISHAY
Vishay Semiconductors
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
300
4 V
3 V
2 V
20
5 V
V
= 8V
DS
250
200
150
100
50
16
12
8
1 V
0
4
V
= –1 V
G1S
0
0
0
20 40 60 80 100 120 140 160
- Ambient Temperature ( °C )
–0.6
–0.2
0.2
0.6
1.0
1.4
96 12159
12817
V
G2S
– Gate 2 Source Voltage ( V )
T
amb
Figure 1. Total Power Dissipation vs. Ambient Temperature
Figure 4. Drain Current vs. Gate 2 Source Voltage
30
3.0
V
= 0.6 V
G1S
V
= 8 V
= 4 V
V
= 4V
DS
G2S
25
20
15
10
5
2.5
2.0
1.5
1.0
0.5
0.0
V
G2S
f = 1 MHz
0.4 V
0.2 V
0
–0.2 V
–0.4 V
0
-2 -1.5 -1 -0.5
0
0.5 1.0 1.5
0
2
4
6
8
10
12812
V
– Drain Source Voltage ( V )
12863
V
– Gate 1 Source Voltage ( V )
G1S
DS
Figure 2. Drain Current vs. Drain Source Voltage
Figure 5. Gate 1 Input Capacitance vs. Gate 1 Source Voltage
3.0
20
3 V
2 V
V
= 8V
6 V
5 V
4 V
DS
V
= 4 V
G2S
2.5
2.0
1.5
1.0
0.5
0.0
f = 1 MHz
16
12
8
1 V
0
4
V
= –1 V
G2S
0
–0.8
–0.4
0.0
0.4
0.8
1.2
2
4
6
8
10
12
12816
V
– Gate 1 Source Voltage ( V )
12864
V
DS
– Drain Source Voltage ( V )
G1S
Figure 3. Drain Current vs. Gate 1 Source Voltage
Figure 6. Output Capacitance vs. Drain Source Voltage
Document Number 85011
Rev. 1.5, 31-Aug-04
www.vishay.com
3
BF998 / BF998R / BF998RW
Vishay Semiconductors
VISHAY
10
5
0
4 V
3 V
V
= 8 V
= 4 V
f = 800 MHz
DS
f = 100 MHz
V
G2S
0
2 V
f = 100...1300 MHz
–5
1 V
–10
–10
–15
–20
–25
–30
–35
–40
I
= 5 mA
D
0
10 mA
400 MHz
700 MHz
–20
–0.2 V
20 mA
–30
–0.4 V
1000 MHz
–40
V
= –0.8 V
G2S
1300 MHz
–50
–1.0
–0.5
0.0
0.5
1.0
1.5
0
4
8
12 16 20 24 28 32
Re (y ( mS )
12818
V
– Gate 1 Source Voltage ( V )
12821
)
21
G1S
Figure 7. Transducer Gain vs. Gate 1 Source Voltage
Figure 10. Short Circuit Forward Transfer Admittance
9
32
V
= 8 V
f = 1 MHz
V
= 4 V
3 V
DS
G2S
f = 1300 MHz
8
7
6
5
4
3
2
1
0
28
24
20
16
12
8
1000 MHz
700 MHz
2 V
V
V
= 15 V
400 MHz
DS
= 4 V
G2S
1 V
16
I
=10 mA
D
4
100 MHz
f = 100...1300 MHz
0
0
0
4
8
D
12
20
24
28
0.00 0.25 0.50 0.75 1.00 1.25 1.50
Re (y ( mS )
12819
I
– Drain Current ( mA )
12822
)
22
Figure 8. Forward Transadmittance vs. Drain Current
Figure 11. Short Circuit Output Admittance
20
f = 1300 MHz
18
16
14
1000 MHz
12
10
700 MHz
8
V
= 8 V
= 4 V
= 10 mA
DS
6
4
2
0
400 MHz
V
G2S
I
D
f = 100...1300 MHz
100 MHz
0
2
4
6
8
10
Re (y ) ( mS )
11
12
14
12820
Figure 9. Short Circuit Input Admittance
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Document Number 85011
Rev. 1.5, 31-Aug-04
BF998 / BF998R / BF998RW
VISHAY
Vishay Semiconductors
VDS = 8 V, ID = 10 mA, VG2S = 4 V, Z0 = 50 Ω
S11
S21
90°
j
120 °
400
60°
700
j0.5
0.2
j2
1000
150 °
100
30°
j0.2
0
1300 MHz
j5
180°
1
2
0°
0.5
1
2
5
100
–j5
–j0.2
1300 MHz
1000
–150°
–30°
–j0.5
–j2
–120°
–60°
12962
–90°
12960
–j
Figure 12. Input Reflection Coefficient
Figure 14. Forward Transmission Coefficient
S12
S22
j
90 °
120 °
60 °
j0.5
0.2
j2
5
150°
30 °
j0.2
0
j5
1200
1300 MHz
200
100
0.5
1
2
180°
0.08
0.16
0 °
100
–j0.2
–j5
–150°
–30°
1300 MHz
–j0.5
–j2
–120°
–60°
12963
–j
12973
–90°
Figure 13. Reverse Transmission Coefficient
Figure 15. Output Reflection Coefficient
Document Number 85011
Rev. 1.5, 31-Aug-04
www.vishay.com
5
BF998 / BF998R / BF998RW
Vishay Semiconductors
VISHAY
Package Dimensions in mm
1.1 (0.043)
0.9 (0.035)
0.50(0.020)
0.9 (0.035)
0.35 (0.014)
0.15 (0.006)
0.08 (0.003)
0.75 (0.029)
3.0 (0.117)
2.8 (0.109)
0...0.1 (0...0.004)
Mounting Pad Layout
1.8 (0.070)
1.6 (0.062)
0.65 (0.025)
1.17 (0.046)
ISO Method E
2.0 (0.078)
1.8 (0.070)
96 12240
Package Dimensions in mm
96 12239
www.vishay.com
6
Document Number 85011
Rev. 1.5, 31-Aug-04
BF998 / BF998R / BF998RW
VISHAY
Vishay Semiconductors
Package Dimensions in mm
96 12238
Document Number 85011
Rev. 1.5, 31-Aug-04
www.vishay.com
7
BF998 / BF998R / BF998RW
Vishay Semiconductors
VISHAY
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the
use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
www.vishay.com
8
Document Number 85011
Rev. 1.5, 31-Aug-04
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