BFG67-GS08 [VISHAY]

Transistor;
BFG67-GS08
型号: BFG67-GS08
厂家: VISHAY    VISHAY
描述:

Transistor

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中文:  中文翻译
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BFG67  
Vishay Semiconductors  
Silicon NPN Planar RF Transistor  
2
1
Features  
• Small feedback capacitance  
• Low noise figure  
e3  
• High transition frequency  
4
3
• Lead (Pb)-free component  
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
Electrostatic sensitive device.  
Observe precautions for handling.  
19217  
Applications  
Mechanical Data  
Low noise small signal amplifiers up to 2 GHz. This Case: SOT-143 Plastic case  
transistor has superior noise figure and associated  
gain performance at UHF, VHF and microwave fre-  
quencies.  
Weight: approx. 8.0 mg  
Marking: V3  
Pinning: 1 = Collector, 2 = Base, 3 = Emitter  
Absolute Maximum Ratings  
Tamb = 25 °C, unless otherwise specified  
Parameter  
Test condition  
Symbol  
VCBO  
Value  
20  
Unit  
V
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
VCEO  
VEBO  
IC  
10  
2.5  
V
V
50  
mA  
mW  
°C  
Total power dissipation  
Junction temperature  
Storage temperature range  
Tamb 60 °C  
Ptot  
Tj  
200  
150  
Tstg  
- 65 to +150  
°C  
Maximum Thermal Resistance  
Parameter  
Test condition  
Symbol  
RthJA  
Value  
450  
Unit  
K/W  
1)  
Junction ambient  
1) on glass fibre printed board (25 x 20 x 1.5) mm3 plated with 35 µm Cu  
Electrical DC Characteristics  
Tamb = 25 °C, unless otherwise specified  
Parameter  
Test condition  
Symbol  
ICES  
ICBO  
Min  
Typ.  
Max  
100  
Unit  
Collector-emitter cut-off current VCE = 20 V, VBE = 0  
µA  
Collector-base cut-off current  
Emitter-base cut-off current  
V
V
CB = 15 V, IE = 0  
EB = 1 V, IC = 0  
100  
1
nA  
µA  
V
IEBO  
Collector-emitter breakdown  
voltage  
I
C = 1 mA, IB = 0  
V(BR)CEO  
10  
65  
Collector-emitter saturation  
voltage  
IC = 50 mA, IB = 5 mA  
VCEsat  
hFE  
0.1  
0.4  
V
DC forward current transfer ratio VCE = 5 V, IC = 15 mA  
100  
150  
Document Number 85074  
Rev. 1.2, 15-Apr-05  
www.vishay.com  
1
BFG67  
Vishay Semiconductors  
Electrical AC Characteristics  
Tamb = 25 °C, unless otherwise specified  
Parameter  
Test condition  
Symbol  
fT  
Min  
Typ.  
7.5  
Max  
Unit  
Transition frequency  
VCE = 8 V, IC = 15 mA,  
f = 500 MHz  
GHz  
Collector-base capacitance  
Collector-emitter capacitance  
Emitter-base capacitance  
Noise figure  
V
V
CB = 10 V, f = 1 MHz  
CE = 8 V, f = 1 MHz  
Ccb  
Cce  
Ceb  
F
0.35  
0.25  
0.85  
0.8  
pF  
pF  
pF  
dB  
VEB = 0.5 V, f = 1 MHz  
CE = 8 V, ZS = ZSopt  
f = 800 MHz, IC = 5 mA  
CE = 8 V, ZS = ZSopt  
f = 800 MHz, IC = 15 mA  
CE = 8 V, ZS = 50 , f = 2 GHz,  
C = 5 mA  
CE = 8 V, ZS = 50 , f = 2 GHz,  
IC = 15 mA  
CE = 8 V, ZS = 50 , ZL = ZLopt  
V
,
V
,
F
F
1.5  
2.5  
3.0  
17  
dB  
dB  
dB  
dB  
dB  
mV  
V
I
V
F
Power gain  
V
,
,
Gpe  
Gpe  
V1 = V2  
IC = 15 mA, f = 800 MHz  
VCE = 8 V, ZS = 50 , ZL = ZLopt  
9
I
C = 15 mA, f = 2 GHz  
Linear output voltage - two tone  
intermodulation test  
V
CE = 8 V, IC = 15 mA,  
160  
dIM = 60 dB, f1 = 806 MHz,  
f2 = 810 MHz, ZS = ZL = 50 Ω  
Third order intercept point  
V
CE = 8 V, IC = 15 mA,  
IP3  
26  
dBm  
f = 800 MHz  
Package Dimensions in mm  
1.1 (0.043)  
0.9 (0.035)  
0.50(0.020)  
0.35 (0.014)  
0.9 (0.035)  
0.75 (0.029)  
0.15 (0.006)  
0.08 (0.003)  
3.0 (0.117)  
2.8 (0.109)  
0...0.1 (0...0.004)  
Mounting Pad Layout  
1.8 (0.070)  
1.6 (0.062)  
0.65 (0.025)  
1.17 (0.046)  
ISO Method E  
2.0 (0.078)  
1.8 (0.070)  
96 12240  
www.vishay.com  
2
Document Number 85074  
Rev. 1.2, 15-Apr-05  
BFG67  
Vishay Semiconductors  
Ozone Depleting Substances Policy Statement  
It is the policy of Vishay Semiconductor GmbH to  
1. Meet all present and future national and international statutory requirements.  
2. Regularly and continuously improve the performance of our products, processes, distribution and operating  
systems with respect to their impact on the health and safety of our employees and the public, as well as  
their impact on the environment.  
It is particular concern to control or eliminate releases of those substances into the atmosphere which are  
known as ozone depleting substances (ODSs).  
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs  
and forbid their use within the next ten years. Various national and international initiatives are pressing for an  
earlier ban on these substances.  
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use  
of ODSs listed in the following documents.  
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments  
respectively  
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental  
Protection Agency (EPA) in the USA  
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.  
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting  
substances and do not contain such substances.  
We reserve the right to make changes to improve technical design  
and may do so without further notice.  
Parameters can vary in different applications. All operating parameters must be validated for each  
customer application by the customer. Should the buyer use Vishay Semiconductors products for any  
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all  
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal  
damage, injury or death associated with such unintended or unauthorized use.  
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany  
Document Number 85074  
Rev. 1.2, 15-Apr-05  
www.vishay.com  
3
Legal Disclaimer Notice  
Vishay  
Notice  
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,  
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.  
Information contained herein is intended to provide a product description only. No license, express or implied, by  
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's  
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express  
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness  
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.  
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.  
Customers using or selling these products for use in such applications do so at their own risk and agree to fully  
indemnify Vishay for any damages resulting from such improper use or sale.  
Document Number: 91000  
Revision: 08-Apr-05  
www.vishay.com  
1

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