BPW76B [VISHAY]
Silicon NPN Phototransistor; 硅NPN光电晶体管
| 型号： | BPW76B |
| 厂家： | 
VISHAY |
| 描述： | Silicon NPN Phototransistor |
| 文件： | 总6页 (文件大小：85K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BPW76
Vishay Telefunken
Silicon NPN Phototransistor
Description
BPW76 is a high sensitive silicon NPN epitaxial planar
phototransistor in a standard TO–18 hermetically
sealed metal case.
Its flat glass window makes it ideal for applications with
external optics.
A base terminal is available to enable biasing and sen-
sitivity control.
Features
Hermetically sealed case
Flat window
94 8401
Very wide viewing angle ϕ = ± 40
Exact central chip alignment
Long range light barrier with an additional optics
Base terminal available
High photo sensitivity
Suitable for visible and near infrared radiation
Selected into sensitivity groups
Applications
Detector in electronic control and drive circuits
Absolute Maximum Ratings
T
amb
= 25 C
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Test Conditions
Symbol
Value
80
70
Unit
V
V
V
CBO
V
CEO
V
EBO
5
V
Collector Current
Peak Collector Current
Total Power Dissipation
Junction Temperature
I
50
100
250
125
mA
mA
mW
C
C
t /T = 0.5, t
10 ms
I
p
p
CM
T
25 C
P
T
amb
tot
j
Storage Temperature Range
Soldering Temperature
T
T
–55...+125
260
C
C
stg
t
5 s
sd
Thermal Resistance Junction/Ambient
Thermal Resistance Junction/Case
R
thJA
R
thJC
400
150
K/W
K/W
Document Number 81526
Rev. 2, 20-May-99
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BPW76
Vishay Telefunken
Basic Characteristics
T
amb
= 25 C
Parameter
Collector Emitter Breakdown
Voltage
Collector Dark Current
Collector Emitter Capacitance
Angle of Half Sensitivity
Wavelength of Peak Sensitivity
Range of Spectral Bandwidth
Collector Emitter Saturation
Voltage
Test Conditions
I = 1 mA
Symbol Min
Typ
Max
100
Unit
V
V
70
C
(BR)CE
O
V
CE
= 20 V, E = 0
I
1
6
±40
nA
pF
deg
nm
nm
V
CEO
V
CE
= 5 V, f = 1 MHz, E = 0
C
CEO
ϕ
850
p
620...980
0.15
0.5
2
E = 1 mW/cm ,
V
CEsat
0.3
e
= 950 nm, I = 0.1 mA
C
Turn–On Time
V = 5 V, I = 5 mA,
t
on
t
off
6
5
s
s
S
C
R = 100
L
Turn–Off Time
V = 5 V, I = 5 mA,
S C
R = 100
L
Cut–Off Frequency
V = 5 V, I = 5 mA,
f
c
110
kHz
S
C
R = 100
L
Type Dedicated Characteristics
T
amb
= 25 C
Parameter
Collector Light Current E =1mW/cm ,
Test Conditions
Type
BPW76A
BPW76B
Symbol
Min
0.4
0.6
Typ
0.6
1.2
Max
0.8
Unit
mA
mA
2
I
ca
I
ca
e
=950nm, V =5V
CE
Typical Characteristics (Tamb = 25 C unless otherwise specified)
6
800
600
400
10
5
4
3
2
10
10
10
10
R
thJC
200
0
V
=20V
CE
R
thJA
E=0
1
0
10
10
150
150
0
25
50
75
100
125
20
50
100
– Ambient Temperature ( °C )
94 8342
T
amb
– Ambient Temperature ( °C )
94 8343
T
amb
Figure 1. Total Power Dissipation vs.
Ambient Temperature
Figure 2. Collector Dark Current vs. Ambient Temperature
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Document Number 81526
Rev. 2, 20-May-99
BPW76
Vishay Telefunken
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
20
16
12
8
f=1MHz
V
=5V
CE
2
E =1mW/cm
e
=950nm
4
0
150
100
0
50
100
0.1
1
10
94 8344
T
amb
– Ambient Temperature ( °C )
94 8247
V
CE
– Collector Emitter Voltage ( V )
Figure 3. Relative Collector Current vs.
Ambient Temperature
Figure 6. Collector Emitter Capacitance vs.
Collector Emitter Voltage
10
12
V
=5V
CE
10
8
R =100
L
1
=950nm
0.1
6
t
t
on
4
V
=5V
CE
0.01
=950nm
2
off
0.001
0
10
0.01
0.1
1
0
4
I
8
12
– Collector Current ( mA )
C
16
2
94 8345
E – Irradiance ( mW/cm )
94 8253
e
Figure 4. Collector Light Current vs. Irradiance
Figure 7. Turn On/Turn Off Time vs. Collector Current
1
2
BPW76A
E =1mW/cm
e
1.0
0.8
0.6
0.4
0.2
0
=950nm
2
0.5mW/cm
2
2
0.2mW/cm
0.1mW/cm
0.1
2
0.05mW/cm
10
0.01
100
0.1
1
400
600
800
1000
94 8346
V
– Collector Emitter Voltage ( V )
94 8348
– Wavelength ( nm )
CE
Figure 5. Collector Light Current vs.
Collector Emitter Voltage
Figure 8. Relative Spectral Sensitivity vs. Wavelength
Document Number 81526
Rev. 2, 20-May-99
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BPW76
Vishay Telefunken
0°
10
°
20
°
30°
40°
1.0
0.9
50°
60°
0.8
0.7
70°
80°
0.6
0.6
0.4
0.2
0
0.2
0.4
94 8347
Figure 9. Relative Radiant Sensitivity vs.
Angular Displacement
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Document Number 81526
Rev. 2, 20-May-99
BPW76
Vishay Telefunken
Dimensions in mm
96 12175
Document Number 81526
Rev. 2, 20-May-99
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BPW76
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
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Document Number 81526
Rev. 2, 20-May-99
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