BPW97 [VISHAY]
Silicon PIN Photodiode; 硅PIN光电二极管
| 型号： | BPW97 |
| 厂家： | 
VISHAY |
| 描述： | Silicon PIN Photodiode |
| 文件： | 总6页 (文件大小：94K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BPW97
Vishay Telefunken
Silicon PIN Photodiode
Description
BPW97 is an extra high speed PIN photodiode in a
hermetically sealed TO–18 package.
Unlike most similar devices, the cathode terminal is
isolated from case and connected to a third terminal,
givingtheuserallthemeanstoimproveshieldingofhis
system.
Due to its high precision flat glass window and its accu-
rate chip alignment, this device is recommended for
ambitious applications in the optical data transmission
domain.
Features
94 8478
Extra fast response times at low operating volt-
ages
Exact central chip alignment
Chip insulated
Shielded construction
Hermetically sealed TO–18 case
Flat optical window
Wide angle of half sensitivity ϕ = ± 55
2
Radiant sensitive area A=0.25mm
Suitable for visible and near infrared radiation
Suitable for coupling with 50 m gradient index fi-
ber
Applications
Wide band detector for demodulation of fast signals, e.g. of lasers and GaAs emitters.
Detector for optical communication, e.g. for optical fiber transmission systems with only 5 V power supply.
Absolute Maximum Ratings
T
amb
= 25 C
Parameter
Reverse Voltage
Power Dissipation
Junction Temperature
Test Conditions
25 C
Symbol
Value
60
285
Unit
V
mW
C
V
P
R
T
amb
V
T
125
j
Storage Temperature Range
Soldering Temperature
Thermal Resistance Junction/Ambient
T
T
–55...+125
260
C
C
K/W
stg
t
5 s
sd
R
thJA
350
Document Number 81533
Rev. 2, 20-May-99
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BPW97
Vishay Telefunken
Basic Characteristics
T
amb
= 25 C
Parameter
Forward Voltage
Test Conditions
I = 50 mA
Symbol Min
Typ
0.9
Max
1.2
Unit
V
V
F
F
Breakdown Voltage
Reverse Dark Current
Diode Capacitance
Dark Resistance
Serial Resistance
Reverse Light Current
I = 100 A, E = 0
V
I
C
R
R
60
V
R
(BR)
V = 50 V, E = 0
1
1.7
5
180
1.3
5
nA
pF
G
R
ro
V = 50 V, f = 1 MHz, E = 0
R
D
D
S
V = 10m V, E = 0, f = 0
R
V = 50 V, f = 1 MHz
R
2
E = 1 mW/cm ,
e
I
1.0
A
A
ra
= 870 nm, V = 50 V
R
2
E = 1 mW/cm ,
I
0.9
e
ra
= 950 nm, V = 50 V
R
Temp. Coefficient of I
Absolute Spectral Sensitivity
V = 50 V, = 870 nm
TK
Ira
0.2
0.50
0.35
±55
810
%/K
A/W
A/W
deg
nm
nm
%
W/√ Hz
cm√Hz/
ra
R
V = 5 V, = 870 nm
s( )
s( )
ϕ
R
V = 5 V, = 950 nm
R
Angle of Half Sensitivity
Wavelength of Peak Sensitivity
Range of Spectral Bandwidth
Quantum Efficiency
Noise Equivalent Power
Detectivity
p
560...960
0.5
= 850 nm
80
3.6x10
–14
V = 50 V, = 870 nm
NEP
R
*
12
V = 50 V, = 870 nm
R
D
1.4x10
W
Rise Time
V = 3.8 V, R = 50
= 780 nm
,
,
t
r
1.2
1.2
0.6
0.6
1
ns
R
L
Fall Time
V = 3.8 V, R = 50
t
f
ns
R
L
= 780 nm
Rise Time
V = 50 V, R = 50
,
,
t
r
ns
R
L
= 820 nm
Fall Time
V = 50 V, R = 50
t
f
ns
R
L
= 820 nm
= 820 nm
Cut–Off Frequency
f
c
GHz
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Document Number 81533
Rev. 2, 20-May-99
BPW97
Vishay Telefunken
Typical Characteristics (Tamb = 25 C unless otherwise specified)
4
3
2
1
0
10
10
10
10
10
10
V =50V
R
2
1mW/cm
1
2
0.5mW/cm
2
2
0.2mW/cm
0.1mW/cm
0.1
0.01
=950nm
120
– Ambient Temperature ( °C )
100
20
40
60
80
100
0.1
1
10
V – Reverse Voltage ( V )
R
94 8445
T
amb
94 8448
Figure 1. Reverse Dark Current vs. Ambient Temperature
Figure 4. Reverse Light Current vs. Reverse Voltage
1.4
1.3
8
V =50V
=870nm
E=0
f=1MHz
R
6
1.2
1.1
1.0
0.9
0.8
4
2
0
100
100
20
40
60
80
0.1
1
10
V – Reverse Voltage ( V )
R
94 8446
T
– Ambient Temperature ( °C )
94 8449
amb
Figure 2. Relative Reverse Light Current vs.
Ambient Temperature
Figure 5. Diode Capacitance vs. Reverse Voltage
–10
10
10
f=1000MHz
500MHz
–11
10
1
100MHz
–12
10
10MHz
0.1
–13
10
V =50V
R
=950nm
f;B=1
=870nm
1MHz
–14
0.01
0.01
10
2
3
4
5
6
7
8
10
10
10
10
10
10
10
10
0.1
1
2
94 8447
E – Irradiance ( mW/cm )
94 8450
R
L
– Load Resistance (
)
e
Figure 3. Reverse Light Current vs. Irradiance
Figure 6. Noise Equivalent Power vs. Load Resistance
Document Number 81533
Rev. 2, 20-May-99
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BPW97
Vishay Telefunken
0°
10
°
20
°
3
2
30°
40°
1
1.0
0.9
0
50°
60°
V =50V
R
–1
–2
–3
0.8
0.7
15V
70°
80°
1000
0.6
1
10
100
0.6
0.4
0.2
0
0.2
0.4
94 8451
f – Frequency ( MHz )
94 8453
Figure 9. Relative Radiant Sensitivity vs.
Angular Displacement
Figure 7. Relative Sensitivity vs. Frequency
1.0
0.8
0.6
0.4
0.2
0
1150
350
550
750
950
94 8452
– Wavelength ( nm )
Figure 8. Relative Spectral Sensitivity vs. Wavelength
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Document Number 81533
Rev. 2, 20-May-99
BPW97
Vishay Telefunken
Dimensions in mm
96 12182
Document Number 81533
Rev. 2, 20-May-99
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BPW97
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
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Document Number 81533
Rev. 2, 20-May-99
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