BS107-TR1 [VISHAY]
Small Signal Field-Effect Transistor, 0.12A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92, TO-92-18RM, 3 PIN;
| 型号： | BS107-TR1 |
| 厂家： | 
VISHAY |
| 描述： | Small Signal Field-Effect Transistor, 0.12A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92, TO-92-18RM, 3 PIN 开关 晶体管 |
| 文件： | 总5页 (文件大小：72K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VN2010L/BS107
Vishay Siliconix
N-Channel 200-V (D-S) MOSFETs
PRODUCT SUMMARY
Part Number V(BR)DSS Min (V) rDS(on) Max (W)
VGS(th) (V)
ID (A)
VN2010L
BS107
10 @ V = 4.5 V
0.8 to 1.8
0.8 to 3
0.19
0.12
GS
200
28 @ V = 2.8 V
GS
D Low On-Resistance: 6 W
D Low Offset Voltage
D High-Voltage Drivers: Relays, Solenoids,
Lamps, Hammers, Displays, Transistors, etc.
D Secondary Breakdown Free: 220 V D Full-Voltage Operation
D Telephone Mute Switches, Ringer Circuits
D Power Supply, Converters
D Motor Control
D Low Power/Voltage Driven
D Low Input and Output Leakage
D Excellent Thermal Stability
D Easily Driven Without Buffer
D Low Error Voltage
D No High-Temperature
“Run-Away”
TO-226AA
(TO-92)
TO-92-18RM
(TO-18 Lead Form)
1
2
3
1
2
3
S
G
D
D
G
S
Device Marking
Front View
Device Marking
Front View
“S” VN
2010L
xxyy
“S” BS
107
xxyy
“S” = Siliconix Logo
xxyy = Date Code
“S” = Siliconix Logo
xxyy = Date Code
Top View
VN2010L
Top View
BS107
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)
A
Parameter
Symbol
VN2010L
BS107
Unit
Drain-Source Voltage
Gate-Source Voltage
V
V
200
"30
0.19
0.12
0.8
200
"25
0.12
DS
GS
V
T = 25_C
A
A
Continuous Drain Current (T = 150__C)
I
J
D
T = 100_C
A
a
Pulsed Drain Current
I
DM
T = 25_C
A
0.8
0.5
A
Power Dissipation
P
W
D
T = 100_C
0.32
156
Thermal Resistance, Junction-to-Ambient
R
thJA
250
_C/W
_C
Operating Junction and Storage Temperature Range
T , T
J
–55 to 150
stg
Notes
a. Pulse width limited by maximum junction temperature.
Document Number: 70215
S-04279—Rev. C, 16-Jul-01
www.vishay.com
11-1
VN2010L/BS107
Vishay Siliconix
SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)
A
Limits
VN2010L
BS107
Parameter
Symbol
Test Conditions
Typa Min
Max
Min
Max
Unit
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
V
V
= 0 V, I = 100 mA
220
1.2
200
0.8
200
0.8
(BR)DSS
GS
D
V
V
V
= V , I = 1 mA
1.8
3
GS(th)
DS
GS D
V
= 0 V, V = "20 V
"10
DS
DS
GS
Gate-Body Leakage
I
nA
GSS
V
= 0 V, V = "15 V
"10
1
GS
Drain Leakage Current
I
V
= 70 V, V = 0.2 V
DS GS
DSV
V
V
= 130 V, V = 0 V
GS
0.03
DS
DS
mA
= 160 V, V = 0 V
GS
1
Zero Gate Voltage Drain Current
I
DSS
T
J
= 125_C
100
b
On-State Drain Current
I
V
= 10 V, V = 10 V
0.7
6
0.1
A
D(on)
DS
GS
V
V
= 2.8 V, I = 0.02 A
D
28
GS
GS
b
= 4.5 V, I = 0.05 A
D
6
10
20
Drain-Source On-Resistance
r
W
DS(on)
T
J
= 125_C
11
180
b
Forward Transconductance
g
fs
V
= 15 V, I = 0.1 A
125
DS
D
mS
pF
Common Source
Output Conductance
g
V
= 15 V, I = 0.05 A
0.15
os
DS
D
b
Dynamic
Input Capacitance
C
C
35
9
60
30
15
iss
Output Capacitance
V
=25 V, V = 0 V, f = 1 MHz
GS
oss
DS
Reverse Transfer Capacitance
C
rss
1
Switchingc
Turn-On Time
Turn-Off Time
t
5
20
30
V
= 25 V, R = 250 W
L
ON
DD
ns
I
D
^ 0.1 A, V
= 10 V
GEN
t
21
OFF
R
G
= 25 W
Notes
a. For DESIGN AID ONLY, not subject to production testing.
VNDQ20
b. Pulse test: PW v300 ms duty cycle v2%.
c. Switching time is essentially independent of operating temperature.
Document Number: 70215
S-04279—Rev. C, 16-Jul-01
www.vishay.com
11-2
VN2010L/BS107
Vishay Siliconix
TYPICAL CHARACTERISTICS (T = 25_C UNLESS OTHERWISE NOTED)
A
Ohmic Region Characteristics
Output Characteristics for Low Gate Drive
0.5
0.4
0.3
0.2
0.1
0
50
40
30
20
10
0
V
= 10 V
GS
5 V
4 V
V
= 2.2 V
GS
2.0 V
6 V
3 V
1.8 V
1.6 V
1.4 V
1.2 V
1.0 V
0.6 V
1.6
2 V
0
1
2
3
4
5
0
0.4
0.8
1.2
2.0
VDS – Drain-to-Source Voltage (V)
VDS – Drain-to-Source Voltage (V)
Transfer Characteristics
On-Resistance vs. Gate-to-Source Voltage
500
400
300
200
100
0
28
24
20
16
12
8
V
= 15 V
25_C
DS
TJ = –55_C
125_C
I
= 500 mA
D
250 mA
50 mA
8
4
0
0
1
2
3
4
5
0
4
12
16
20
VGS – Gate-Source Voltage (V)
VGS – Gate-Source Voltage (V)
Normalized On-Resistance
vs. Junction Temperature
On-Resistance vs. Drain Current
12.5
2.25
2.00
1.75
1.50
1.25
1.00
0.75
V
= 4.5 V
GS
I
D
= 50 mA
10.0
7.5
5.0
2.5
0
V
= 10 V
GS
10 mA
0.50
0
0.2
0.4
0.6
0.8
1.0
–50
–10
30
70
110
150
ID – Drain Current (A)
TJ – Junction Temperature (_C)
Document Number: 70215
S-04279—Rev. C, 16-Jul-01
www.vishay.com
11-3
VN2010L/BS107
Vishay Siliconix
TYPICAL CHARACTERISTICS (T = 25_C UNLESS OTHERWISE NOTED)
A
Threshold Region
Capacitance
10
60
50
40
30
20
10
0
V
f
= 0 V
V
= 5 V
GS
DS
= 1 MHz
TJ = 150_C
C
iss
1
C
oss
25_C
0.1
0.01
C
rss
–55_C
0
0.4
0.8
1.2
1.6
2.0
0
10
20
30
40
50
VGS – Gate-to-Source Voltage (V)
VDS – Drain-to-Source Voltage (V)
Gate Charge
Load Condition Effects on Switching
15.0
12.5
10.0
7.5
5.0
2.5
0
100
50
VDD = 25 V
RG = 25 W
VGS = 0 to 10 V
I
= 0.1 A
D
V
= 100 V
DS
20
10
5
160 V
t
d(off)
t
t
r
d(on)
2
1
t
f
0
1
250
500
750
1000
1250
0.01
0.1
1.0
Qg – Total Gate Charge (pC)
ID – Drain Current (A)
Normalized Effective Transient Thermal Impedance, Junction-to-Ambient (TO-226AA)
Duty Cycle = 0.5
0.2
0.1
Notes:
0.05
0.02
P
DM
0.1
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
2. Per Unit Base = R
= 156_C/W
thJA
(t)
Z
0.01
3. T – T = P
JM
A
DM thJA
Single Pulse
0.01
0.1
1
10
100
1 K
10 K
t
1
– Square Wave Pulse Duration (sec)
Document Number: 70215
S-04279—Rev. C, 16-Jul-01
www.vishay.com
11-4
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
www.vishay.com
1
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