BS107-TR1 [VISHAY]

Small Signal Field-Effect Transistor, 0.12A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92, TO-92-18RM, 3 PIN;
BS107-TR1
型号: BS107-TR1
厂家: VISHAY    VISHAY
描述:

Small Signal Field-Effect Transistor, 0.12A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92, TO-92-18RM, 3 PIN

开关 晶体管
文件: 总5页 (文件大小:72K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
VN2010L/BS107  
Vishay Siliconix  
N-Channel 200-V (D-S) MOSFETs  
PRODUCT SUMMARY  
Part Number V(BR)DSS Min (V) rDS(on) Max (W)  
VGS(th) (V)  
ID (A)  
VN2010L  
BS107  
10 @ V = 4.5 V  
0.8 to 1.8  
0.8 to 3  
0.19  
0.12  
GS  
200  
28 @ V = 2.8 V  
GS  
D Low On-Resistance: 6 W  
D Low Offset Voltage  
D High-Voltage Drivers: Relays, Solenoids,  
Lamps, Hammers, Displays, Transistors, etc.  
D Secondary Breakdown Free: 220 V D Full-Voltage Operation  
D Telephone Mute Switches, Ringer Circuits  
D Power Supply, Converters  
D Motor Control  
D Low Power/Voltage Driven  
D Low Input and Output Leakage  
D Excellent Thermal Stability  
D Easily Driven Without Buffer  
D Low Error Voltage  
D No High-Temperature  
“Run-Away”  
TO-226AA  
(TO-92)  
TO-92-18RM  
(TO-18 Lead Form)  
1
2
3
1
2
3
S
G
D
D
G
S
Device Marking  
Front View  
Device Marking  
Front View  
“S” VN  
2010L  
xxyy  
“S” BS  
107  
xxyy  
“S” = Siliconix Logo  
xxyy = Date Code  
“S” = Siliconix Logo  
xxyy = Date Code  
Top View  
VN2010L  
Top View  
BS107  
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)  
A
Parameter  
Symbol  
VN2010L  
BS107  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
V
V
200  
"30  
0.19  
0.12  
0.8  
200  
"25  
0.12  
DS  
GS  
V
T = 25_C  
A
A
Continuous Drain Current (T = 150__C)  
I
J
D
T = 100_C  
A
a
Pulsed Drain Current  
I
DM  
T = 25_C  
A
0.8  
0.5  
A
Power Dissipation  
P
W
D
T = 100_C  
0.32  
156  
Thermal Resistance, Junction-to-Ambient  
R
thJA  
250  
_C/W  
_C  
Operating Junction and Storage Temperature Range  
T , T  
J
–55 to 150  
stg  
Notes  
a. Pulse width limited by maximum junction temperature.  
Document Number: 70215  
S-04279—Rev. C, 16-Jul-01  
www.vishay.com  
11-1  
VN2010L/BS107  
Vishay Siliconix  
SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)  
A
Limits  
VN2010L  
BS107  
Parameter  
Symbol  
Test Conditions  
Typa Min  
Max  
Min  
Max  
Unit  
Static  
Drain-Source Breakdown Voltage  
Gate-Threshold Voltage  
V
V
= 0 V, I = 100 mA  
220  
1.2  
200  
0.8  
200  
0.8  
(BR)DSS  
GS  
D
V
V
V
= V , I = 1 mA  
1.8  
3
GS(th)  
DS  
GS D  
V
= 0 V, V = "20 V  
"10  
DS  
DS  
GS  
Gate-Body Leakage  
I
nA  
GSS  
V
= 0 V, V = "15 V  
"10  
1
GS  
Drain Leakage Current  
I
V
= 70 V, V = 0.2 V  
DS GS  
DSV  
V
V
= 130 V, V = 0 V  
GS  
0.03  
DS  
DS  
mA  
= 160 V, V = 0 V  
GS  
1
Zero Gate Voltage Drain Current  
I
DSS  
T
J
= 125_C  
100  
b
On-State Drain Current  
I
V
= 10 V, V = 10 V  
0.7  
6
0.1  
A
D(on)  
DS  
GS  
V
V
= 2.8 V, I = 0.02 A  
D
28  
GS  
GS  
b
= 4.5 V, I = 0.05 A  
D
6
10  
20  
Drain-Source On-Resistance  
r
W
DS(on)  
T
J
= 125_C  
11  
180  
b
Forward Transconductance  
g
fs  
V
= 15 V, I = 0.1 A  
125  
DS  
D
mS  
pF  
Common Source  
Output Conductance  
g
V
= 15 V, I = 0.05 A  
0.15  
os  
DS  
D
b
Dynamic  
Input Capacitance  
C
C
35  
9
60  
30  
15  
iss  
Output Capacitance  
V
=25 V, V = 0 V, f = 1 MHz  
GS  
oss  
DS  
Reverse Transfer Capacitance  
C
rss  
1
Switchingc  
Turn-On Time  
Turn-Off Time  
t
5
20  
30  
V
= 25 V, R = 250 W  
L
ON  
DD  
ns  
I
D
^ 0.1 A, V  
= 10 V  
GEN  
t
21  
OFF  
R
G
= 25 W  
Notes  
a. For DESIGN AID ONLY, not subject to production testing.  
VNDQ20  
b. Pulse test: PW v300 ms duty cycle v2%.  
c. Switching time is essentially independent of operating temperature.  
Document Number: 70215  
S-04279Rev. C, 16-Jul-01  
www.vishay.com  
11-2  
VN2010L/BS107  
Vishay Siliconix  
TYPICAL CHARACTERISTICS (T = 25_C UNLESS OTHERWISE NOTED)  
A
Ohmic Region Characteristics  
Output Characteristics for Low Gate Drive  
0.5  
0.4  
0.3  
0.2  
0.1  
0
50  
40  
30  
20  
10  
0
V
= 10 V  
GS  
5 V  
4 V  
V
= 2.2 V  
GS  
2.0 V  
6 V  
3 V  
1.8 V  
1.6 V  
1.4 V  
1.2 V  
1.0 V  
0.6 V  
1.6  
2 V  
0
1
2
3
4
5
0
0.4  
0.8  
1.2  
2.0  
VDS Drain-to-Source Voltage (V)  
VDS Drain-to-Source Voltage (V)  
Transfer Characteristics  
On-Resistance vs. Gate-to-Source Voltage  
500  
400  
300  
200  
100  
0
28  
24  
20  
16  
12  
8
V
= 15 V  
25_C  
DS  
TJ = 55_C  
125_C  
I
= 500 mA  
D
250 mA  
50 mA  
8
4
0
0
1
2
3
4
5
0
4
12  
16  
20  
VGS Gate-Source Voltage (V)  
VGS Gate-Source Voltage (V)  
Normalized On-Resistance  
vs. Junction Temperature  
On-Resistance vs. Drain Current  
12.5  
2.25  
2.00  
1.75  
1.50  
1.25  
1.00  
0.75  
V
= 4.5 V  
GS  
I
D
= 50 mA  
10.0  
7.5  
5.0  
2.5  
0
V
= 10 V  
GS  
10 mA  
0.50  
0
0.2  
0.4  
0.6  
0.8  
1.0  
50  
10  
30  
70  
110  
150  
ID Drain Current (A)  
TJ Junction Temperature (_C)  
Document Number: 70215  
S-04279Rev. C, 16-Jul-01  
www.vishay.com  
11-3  
VN2010L/BS107  
Vishay Siliconix  
TYPICAL CHARACTERISTICS (T = 25_C UNLESS OTHERWISE NOTED)  
A
Threshold Region  
Capacitance  
10  
60  
50  
40  
30  
20  
10  
0
V
f
= 0 V  
V
= 5 V  
GS  
DS  
= 1 MHz  
TJ = 150_C  
C
iss  
1
C
oss  
25_C  
0.1  
0.01  
C
rss  
55_C  
0
0.4  
0.8  
1.2  
1.6  
2.0  
0
10  
20  
30  
40  
50  
VGS Gate-to-Source Voltage (V)  
VDS Drain-to-Source Voltage (V)  
Gate Charge  
Load Condition Effects on Switching  
15.0  
12.5  
10.0  
7.5  
5.0  
2.5  
0
100  
50  
VDD = 25 V  
RG = 25 W  
VGS = 0 to 10 V  
I
= 0.1 A  
D
V
= 100 V  
DS  
20  
10  
5
160 V  
t
d(off)  
t
t
r
d(on)  
2
1
t
f
0
1
250  
500  
750  
1000  
1250  
0.01  
0.1  
1.0  
Qg Total Gate Charge (pC)  
ID Drain Current (A)  
Normalized Effective Transient Thermal Impedance, Junction-to-Ambient (TO-226AA)  
Duty Cycle = 0.5  
0.2  
0.1  
Notes:  
0.05  
0.02  
P
DM  
0.1  
t
1
t
2
t
t
1
2
1. Duty Cycle, D =  
2. Per Unit Base = R  
= 156_C/W  
thJA  
(t)  
Z
0.01  
3. T T = P  
JM  
A
DM thJA  
Single Pulse  
0.01  
0.1  
1
10  
100  
1 K  
10 K  
t
1
Square Wave Pulse Duration (sec)  
Document Number: 70215  
S-04279Rev. C, 16-Jul-01  
www.vishay.com  
11-4  
Legal Disclaimer Notice  
Vishay  
Disclaimer  
All product specifications and data are subject to change without notice.  
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf  
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein  
or in any other disclosure relating to any product.  
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any  
information provided herein to the maximum extent permitted by law. The product specifications do not expand or  
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed  
therein, which apply to these products.  
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this  
document or by any conduct of Vishay.  
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless  
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such  
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting  
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding  
products designed for such applications.  
Product names and markings noted herein may be trademarks of their respective owners.  
Document Number: 91000  
Revision: 18-Jul-08  
www.vishay.com  
1

相关型号:

BS107/D

Small Signal MOSFET 250 mAmps, 200 Volts
ETC

BS107A

N-channel enhancement mode vertical D-MOS transistor
NXP

BS107A

TMOS Switching(N-Channel-Enhancement)
MOTOROLA

BS107A

Small Signal MOSFET 250 mAmps, 200 Volts
ONSEMI

BS107A

Small Signal Field-Effect Transistor, 0.12A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92
DIODES

BS107A-AMMO

TRANSISTOR 250 mA, 200 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92, FET General Purpose Small Signal
NXP

BS107A-T/R

TRANSISTOR 250 mA, 200 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92, FET General Purpose Small Signal
NXP

BS107AG

Small Signal MOSFET 250 mAmps, 200 Volts
ONSEMI

BS107AMO

TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 130MA I(D) | TO-92VAR
ETC

BS107ARL

TRANSISTOR 250 mA, 200 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92, PLASTIC, TO-226AA, 3 PIN, FET General Purpose Small Signal
ONSEMI

BS107ARL

Small Signal Field-Effect Transistor, 0.25A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92
MOTOROLA

BS107ARL1

Small Signal MOSFET 250 mAmps, 200 Volts
ONSEMI